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    PHOTOMASK BLANK
    41.
    发明专利
    PHOTOMASK BLANK 失效

    公开(公告)号：JPS63244037A

    公开(公告)日：1988-10-11

    申请号：JP7997787

    申请日：1987-03-31

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO

    IPC: G03F1/00 ,  G03F1/50 ,  G03F1/54 ,  H01L21/027 ,  H01L21/30

    Abstract: PURPOSE:To easily control the line width of a fine dimension by increasing the content of chromium fluoride contd. in a shading film according to far departing from the main surface of a translucent substrate, thereby shortening the over-etching time of the shading film. CONSTITUTION:The content of the chromium fluoride contd. in the shading film increases according to far departing from the main surface of the translucent substrate. And, the chromium fluoride content increases stepwisely or continuously according to far departing from the main surface of said substrate. Namely, the more the chromium fluoride content of the shading film increases, the more the etching amount per unit time (an etching speed) of the shading film composed of the chromium contg. the chromium fluoride decreases. Thus, the line width of the fine dimension is easily controlled by shortening the over- etching time, and the photomask can be produced by decreasing the residual amount of the chromium.

    PHOTOMASK BLANK AND PHOTOMASK
    42.
    发明专利
    PHOTOMASK BLANK AND PHOTOMASK 失效

    公开(公告)号：JPS6381426A

    公开(公告)日：1988-04-12

    申请号：JP22933086

    申请日：1986-09-26

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO

    IPC: G03F1/00 ,  G03F1/50 ,  G03F1/54 ,  H01L21/027

    Abstract: PURPOSE:To permit secure formation of a pattern having desired line width by forming a thin film contg. chromium and at least one among fluoride, oxide, and nitride of chromium on a principal surface of a light transmittive substrate. CONSTITUTION:A photomask blank 1 comprises a light transmittive substrate 2 and a see-through thin film 3 coated on a principal surface of the light transmittive surface 2. The see-through thin film 3 contains chromium and nitride, oxide, or fluoride of chromium. Further, a photomask 4 comprises a light transmittive substrate 2 consisting of quartz glass and a see-through thin film pattern 3a formed on a principal surface of the light transmittive substrate 2. The see-through thin film pattern 3a is obtd. by patternizing selectively the see-through thin film 3 of a photomask blank 1 and contains chromium and nitride, oxide, or fluoride of chromium. By this constitution, the etching speed of the thin film is made slower and a pattern having a desired line width is obtd. easily.

    Photomask blank
    44.
    发明专利
    Photomask blank 失效
    PHOTOMASK BLANK

    公开(公告)号：JPS59139033A

    公开(公告)日：1984-08-09

    申请号：JP1290483

    申请日：1983-01-31

    Applicant: Hoya Corp

    Inventor： KASAMA KOUTAROU ,  USHIDA MASAO

    IPC: G03F1/00 ,  G03F1/40 ,  G03F1/46 ,  G03F1/50 ,  G03F1/58 ,  H01L21/027

    CPC classification number: G03F1/46 ,  G03F1/50 ,  G03F1/54

    Abstract: PURPOSE:To obtain antistatic effect and reflection preventive effect of a photomask prepd. by plasma etching using chlorine or similar gas by providing a light shielding metallic film of a specific element on a glass base plate and forming a reflection preventive film of an oxide of a specified element thereon. CONSTITUTION:A light shielding metallic film 3 is formed on a glass base plate 1 using Si, Ge, Sb, or Au. A reflection preventive film 4 is formed further on the film 3 using an oxide of Si, Ge, or Sb. On one hand, a transparent conductive film 2 is formed using an oxide of Fe, In, Re, Pb, Zn, Ni, or Co between the base plate 1 and the film 3. The photomask in accordance with this constitution is easily etched at the film 3 and the film 4 by the plasma etching using chlorine or similar gas, but the conductive film 2 has resistance to the etching. Easily etchable films 3 and 4 serve as masking material, and hardly etchable conductive film 2 has antistatic effect, therefore, the breakage due to electric charge and multiple reflection are both prevented.

    Abstract translation: 目的：获得光掩模制剂的抗静电效果和防反射效果。 通过在玻璃基板上设置特定元素的遮光金属膜并在其上形成特定元素的氧化物的防反射膜，通过使用氯或类似气体的等离子体蚀刻。 构成：使用Si，Ge，Sb或Au在玻璃底板1上形成遮光金属膜3。 使用Si，Ge或Sb的氧化物在膜3上进一步形成防反射膜4。 一方面，使用在基板1和膜3之间的Fe，In，Re，Pb，Zn，Ni或Co的氧化物形成透明导电膜2.根据该结构的光掩模容易在 膜3和膜4通过使用氯气或类似气体的等离子体蚀刻，但导电膜2具有耐蚀刻性。 易于蚀刻的膜3和4用作掩模材料，并且几乎不可蚀刻的导电膜2具有抗静电效果，因此，防止了由于电荷和多次反射引起的断裂。

    Phase shift mask blank, method for producing the same, phase shift mask, method for producing the same, and method for producing display
    47.
    发明专利
    Phase shift mask blank, method for producing the same, phase shift mask, method for producing the same, and method for producing display 有权
    相位移屏蔽层，其制造方法，相位移掩模，其生产方法及其制造方法

    公开(公告)号：JP2014194531A

    公开(公告)日：2014-10-09

    申请号：JP2014029445

    申请日：2014-02-19

    Applicant: Hoya Corp ,  Hoya株式会社 ,  Hoya Electronics Malaysia Sdn Bhd ,  ホーヤ エレクトロニクス マレーシア センドリアン ベルハッドHoya Electronics Malaysia Sendirian Berhad

    Inventor： TSUBOI SEIJI ,  YOSHIKAWA YUTAKA ,  SUGANO MICHIO ,  USHIDA MASAO

    IPC: G03F1/32 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a phase shift mask blank capable of being formed into a cross-sectional shape effectively exhibiting a phase effect by wet etching.SOLUTION: Provided is a phase shift mask blank comprising: a transparent substrate; an optical semi-permeable film formed on the main surface of the transparent substrate and composed of a metal silicide based material; and a chromium based material formed on the optical semi-permeable film and composed of a chromium based material. A composition-inclined region P is formed on the boundary between the optical semi-permeable film and the etching mask film, and, in the composition-inclined region P, the ratio of components delaying the wet etching rate of the optical semi-permeable film is stepwise and/or continuously increased toward a depth direction.

    Abstract translation: 要解决的问题：提供能够通过湿法蚀刻形成有效显示相位效应的横截面形状的相移掩模坯料。解决方案：提供一种相移掩模坯料，包括：透明基板; 在透明基板的主表面上形成由金属硅化物基材料构成的光学半透膜; 以及形成在所述光学半透膜上并由铬基材料构成的铬基材料。 组成倾斜区域P形成在光学半透膜和蚀刻掩模膜之间的边界上，并且在组成倾斜区域P中，延迟光学半透膜的湿蚀刻速率的分量比 向深度方向逐步和/或连续增加。

    Mask blank and photomask
    48.
    发明专利
    Mask blank and photomask 审中-公开
    MASK BLANK和PHOTOMASK

    公开(公告)号：JP2009294682A

    公开(公告)日：2009-12-17

    申请号：JP2009218490

    申请日：2009-09-24

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： MITSUI MASARU ,  SANO MICHIAKI ,  USHIDA MASAO

    IPC: G03F1/50 ,  G03F1/54

    Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask suitable for processes in a large mask for a FPD (flat panel display) (for example, a resist application method, an etching method and a cleaning method). SOLUTION: The mask blank for manufacturing a FPD device includes at least one of a light-shielding film and a semi-translucent film having a function of adjusting the transmission quantity on a light-transmitting substrate. A root mean square roughness Rq on the film surface of the light-shielding film and the semi-translucent film is not more than 2.0 nm. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：提供适用于FPD（平板显示器）的大掩模（例如，抗蚀剂施加方法，蚀刻方法和清洁方法）中的工艺的掩模毛坯和光掩模。 解决方案：用于制造FPD器件的掩模板包括具有调节透光衬底上的透射量的功能的遮光膜和半透明膜中的至少一种。 遮光膜和半透明膜的膜表面上的均方根粗糙度Rq不大于2.0nm。 版权所有（C）2010，JPO＆INPIT

    Method of manufacturing halftone type phase shift mask blank
    49.
    发明专利
    Method of manufacturing halftone type phase shift mask blank 有权
    制造牛皮类型相移屏蔽空白的方法

    公开(公告)号：JP2008304942A

    公开(公告)日：2008-12-18

    申请号：JP2008229229

    申请日：2008-09-08

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： USHIDA MASAO ,  SAKAMOTO MINORU

    IPC: C23C14/06 ,  G03F1/29 ,  G03F1/32 ,  G03F1/54

    Abstract: PROBLEM TO BE SOLVED: To provide a technique capable of easily and accurately adjusting the reflectivity and wavelength dependence of a shielding film in order to properly and rapidly carry out a redesign under transition of exposure wavelength, a resist drawing wavelength and an inspection wavelength or the like in a halftone type phase shift mask. SOLUTION: A halftone type phase shift mask includes on a transparent substrate 1: a translucent film 2 having a predetermined transmittance and phase shift amount for an exposed light; and a shielding film pattern formed on the translucent film pattern. In a method of adjusting the reflectivity and wavelength dependence of the shielding film 3 of the halftone type phase shift mask, an uppermost layer portion of the shielding film 3 is set to be a reflectivity adjusting section 3a containing chromium, carbon, oxygen and nitrogen; and the reflectivity and wavelength dependence of the whole shielding film 3 is adjusted based on a content rate of the nitrogen in the reflectivity adjusting section 3a. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供能够容易且准确地调整屏蔽膜的反射率和波长依赖性的技术，以便在曝光波长，抗蚀剂绘制波长和检查的转变下适当和快速地进行重新设计 波长等在半色调型相移掩模中。 解决方案：半色调型相移掩模包括在透明基板1上：具有预定曝光的透射率和相移量的半透明膜2; 以及形成在半透明膜图案上的屏蔽膜图案。 在调节半色调型移相掩模的屏蔽膜3的反射率和波长依赖性的方法中，屏蔽膜3的最上层部分被设置为含有铬，碳，氧和氮的反射率调节部分3a; 并且基于反射率调节部分3a中的氮的含量率来调节整个屏蔽膜3的反射率和波长依赖性。 版权所有（C）2009，JPO＆INPIT

    Mask blank and photomask
    50.
    发明专利
    Mask blank and photomask 有权
    MASK BLANK和PHOTOMASK

    公开(公告)号：JP2007271720A

    公开(公告)日：2007-10-18

    申请号：JP2006094482

    申请日：2006-03-30

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： MITSUI MASARU ,  SUGIHARA OSAMU ,  USHIDA MASAO

    IPC: G03F1/50 ,  G03F1/54 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask that suppress hindrance to higher quality of a large-sized mask blank and a mask for future FPD. SOLUTION: The mask blank 10 for manufacturing an FPD device has a light-transmissive substrate 12, a light-transmissive film 14 which is formed on the substrate 12 and transmits light in a wavelength range from the (i) line to the (g) line, and a light shield film 16 which is formed on the light-transmissive film 14 and made of a metal-silicide-based material containing metal and silicon. Here, the light shield film 16 is a film patterned by wet etching and the light-transmissive film 14 is a film of a material having etching selectivity with the light shield film 16. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：提供掩模空白和光掩模，其抑制大尺寸掩模坯料和未来FPD的掩模的较高质量的阻碍。 解决方案：用于制造FPD器件的掩模基板10具有透光基板12，透光膜14，其形成在基板12上并透射从（i）线到 （g）线和形成在透光膜14上并由含有金属和硅的金属硅化物基材料制成的遮光膜16。 这里，遮光膜16是通过湿蚀刻图案化的膜，透光膜14是具有与遮光膜16的蚀刻选择性的材料的膜。版权所有（C）2008，JPO＆INPIT

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