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    CHROMIUM MASK BLANK AND ITS PRODUCTION
    3.
    发明专利
    CHROMIUM MASK BLANK AND ITS PRODUCTION 失效

    公开(公告)号：JPS6091356A

    公开(公告)日：1985-05-22

    申请号：JP19985583

    申请日：1983-10-25

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO ,  MATSUI SHIGEKAZU ,  YOSHIDA SHIYUUJI ,  MITSUI MASARU

    IPC: C23C14/06 ,  G03F1/00 ,  G03F1/50 ,  G03F1/58 ,  G03F1/88 ,  H01L21/027

    Abstract: PURPOSE:To decrease the rate of change in the flatness of a transparent base plate and to prevent the generation of pinholes by forming a film consisting of a mixture composed of Cr, CrxNy and CrxOyNz on the transparent base plate. CONSTITUTION:Gaseous plasma is formed on a transparent base plate 1 consisting of soda lime glass having a precision polished surface in a gaseous mixture atmosphere composed of 70% Ar, 25% N2 and 5% NO evacuated to 1X10 (Torr). The ionized gaseous argon is struck against a chromium target to drive off chromium atoms. Said chromium atoms react with the activated gas of nitrogen and carbon monoxide to form a film consisting of the mixture composed of CR, CrxNy and CrxCyNz. The base plate is coated by such film and the chromium mask blank is manufactured. The rate of the change in the flatness of the plate 1 of such chromium mask blank is 0.4mum and the percentage of pinhole defect is 14%.

    TRANSFER MASK AND ITS MANUFACTURING METHOD
    4.
    发明专利
    TRANSFER MASK AND ITS MANUFACTURING METHOD 失效

    公开(公告)号：JP2001358069A

    公开(公告)日：2001-12-26

    申请号：JP2001122535

    申请日：2001-04-20

    Applicant: HOYA CORP

    Inventor： AMAMIYA ISAO ,  YASUMATSU SATOSHI ,  NAKAYAMA AKIHIKO ,  MATSUI SHIGEKAZU

    IPC: G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F1/16

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a transfer mask having an extremely high precision of corner squareness of an opening pattern and an extremely high connecting precision. SOLUTION: The method for manufacturing the transfer mask having an opening formed on a thin film supported to a support frame comprises the steps of forming an etching mask layer on the surface of a substrate, and optimizing etching conditions of an etching mask layer so as to obtain good characteristics in both a pattern size and a corner R-value in the case of patterning the mask layer in the same pattern as a desired opening shape by using a lithography technique.

    MULTILAYER PRINTED WIRING BOARD AND MANUFACTURE THEREOF
    7.
    发明专利
    MULTILAYER PRINTED WIRING BOARD AND MANUFACTURE THEREOF 失效

    公开(公告)号：JP2001044639A

    公开(公告)日：2001-02-16

    申请号：JP2000149570

    申请日：2000-05-22

    Applicant: HOYA CORP

    Inventor： FUSHIE TAKASHI ,  KAGATSUME TAKESHI ,  MATSUI SHIGEKAZU

    IPC: H05K3/28 ,  H01L23/538 ,  H05K1/03 ,  H05K3/00 ,  H05K3/18 ,  H05K3/38 ,  H05K3/42 ,  H05K3/46

    Abstract: PROBLEM TO BE SOLVED: To attain the formation of a fine wiring pattern, and to realize high density wiring pattern. SOLUTION: A photosensitive glass 2 whose thermal expansion coefficient is close to that of a copper film layer 6 is used as a core substrate, and a through-hole 3 is formed by photolithography at the photosensitive glass 2. A sputtered oxide silicon layer 4a and a sputtered nitride silicon layer 4b for preventing the leakage of alkali metallic ion from the photosensitive glass 2 are formed, and a sputtered chrome layer 5a, a sputtered chrome copper layer 5b, and a sputtered copper layer 5c whose film adhesive strength with the copper film layer 6 and the sputtered oxide silicon layer 4a is increased are formed. The copper film layer 6 is formed so as to be 1 μm-2 μm thin, the through-hole 3 is filled with resin 8, and the pattern formation of a wiring layer is operated by etching. Then, an insulating layer 10 is formed, and the surface is covered with a surface processing layer 12 and a cover coat 13.

    CHROMIUM MASK WASHING METHOD
    10.
    发明专利
    CHROMIUM MASK WASHING METHOD 失效

    公开(公告)号：JPS6088946A

    公开(公告)日：1985-05-18

    申请号：JP19734583

    申请日：1983-10-21

    Applicant: HOYA CORP

    Inventor： YOSHIDA SHIYUUJI ,  MATSUI SHIGEKAZU

    IPC: G03F1/00 ,  G03F1/82 ,  H01L21/027

    Abstract: PURPOSE:To prevent a defect of a Cr film by retaining the oxidative effect of a washing soln. in washing the Cr mask of a semiconductor element. CONSTITUTION:A Cr film pattern is formed on a glass base to form a Cr mask, and its surface is oxidized in the air and it is covered with a Cr oxide film. When the Cr mask is washed with a washing soln. contg. sulfuric acid and a small piece of aluminum is present as a dust in the solution, the Cr oxide layer is reduced to metallic Cr, and the Cr oxide film is dissolved off. On the other hand, when nitric acid as an oxidizing agent is mixed with the sulfuric acid and the mask is washed with the soln., even if the Cr oxide is reduced into metallic Cr, since it is immediately oxidized to Cr oxide with the oxidizing agent and covers the metallic Cr, and Cr oxide is not dissolved into the soln. The nitric acid is, preferably, added >=5mol% of the sulfuric acid. Oxidizig agents such as H2O2, KMnO4 etc. can be used. As a result, a defect of the Cr film can be prevented by retaining the oxidation action of the washing soln., disconnection of the pattern, and occurrence of insular Cr films can be eliminated.

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