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    Lithografiemaskenrohling
    1.
    发明专利
    Lithografiemaskenrohling 未知

    公开(公告)号：DE10393095B4

    公开(公告)日：2011-07-07

    申请号：DE10393095

    申请日：2003-12-24

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO ,  TAKEUCHI MEGUMI ,  SUZUKI OSAMU ,  SAKAMOTO MINORU

    IPC: G03F1/32 ,  G03F1/48 ,  G03F1/68 ,  H01L21/027

    Abstract: Verfahren zur Herstellung eines Lithografiemaskenrohlings mit den Schritten: Bereitstellen eines Substrats; Ausbilden mindestens einer Lage aus einer Dünnschicht, die Molybdän, Silizium und Stickstoff enthält, auf dem Substrat; und Ausbilden einer Schicht zum Verhindern der Erzeugung von Ammoniumionen an mindestens einem Oberflächenabschnitt der Dünnschicht, wobei die Schicht zum Verhindern der Erzeugung von Ammoniumionen durch Ausführen einer Wärmebehandlung der Dünnschicht, die Molybdän, Silizium und Stickstoff enthält, in einer Atmosphäre hergestellt wird, die Sauerstoff enthält.

    2.
    发明专利
    未知

    公开(公告)号：DE10393095T5

    公开(公告)日：2005-08-25

    申请号：DE10393095

    申请日：2003-12-24

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO ,  TAKEUCHI MEGUMI ,  SUZUKI OSAMU ,  SAKAMOTO MINORU

    IPC: G03F1/32 ,  G03F1/48 ,  G03F1/68 ,  H01L21/027 ,  G03F1/08

    Abstract: A lithography mask blank used as a material for producing a lithography mask includes at least one thin film which is formed on a substrate and has a desired function. The blank has a nitrogen-containing thin film as the above-mentioned thin film and an ammonium ion production preventing layer for preventing production of ammonium ions, which is formed on the nitrogen-containing thin film or at least at a surface portion of the nitrogen-containing thin film and which is exposed on the surface of the lithography mask after the lithography mask is manufactured.

    Mask blank and manufacturing method of phase shift mask
    4.
    发明专利
    Mask blank and manufacturing method of phase shift mask 有权
    相位移掩模的掩蔽空白和制造方法

    公开(公告)号：JP2012212013A

    公开(公告)日：2012-11-01

    申请号：JP2011077489

    申请日：2011-03-31

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： USHIDA MASAO ,  OKUBO AKIRA ,  OKUBO YASUSHI ,  NOZAWA JUN

    IPC: G03F1/54

    Abstract: PROBLEM TO BE SOLVED: To provide a mask blank suited for manufacturing substrate digging type phase shift masks, including a light-shielding film pattern of a tantalum-based material.SOLUTION: A mask blank 100 used for manufacturing substrate digging type phase shift masks has a configuration in which a light shielding film 8, and an etching mask film 5 are sequentially superposed on a translucent substrate 1. The light shielding film 8 is formed in contact with a translucent substrate 1, and comprises a material consisting primarily of tantalum and substantially including no oxygen. The etching mask film 5 comprises a material having the content of chromium of 45 at% or more and the content of oxygen of 30 at% or less.

    Abstract translation: 要解决的问题：提供一种适用于制造基板挖掘型相移掩模的掩模坯料，其包括钽基材料的遮光膜图案。 解决方案：用于制造衬底挖掘型相移掩模的掩模板100具有其中遮光膜8和蚀刻掩模膜5顺序地重叠在透光基板1上的构造。遮光膜8是 形成为与半透明基板1接触，并且包括主要由钽组成并且基本上不包含氧的材料。 蚀刻掩模膜5包含铬含量为45原子％以上，氧含量为30原子％以下的材料。 版权所有（C）2013，JPO＆INPIT

    Mask blank and photomask
    5.
    发明专利
    Mask blank and photomask 审中-公开
    MASK BLANK和PHOTOMASK

    公开(公告)号：JP2007219038A

    公开(公告)日：2007-08-30

    申请号：JP2006037461

    申请日：2006-02-15

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： MITSUI MASARU ,  SANO MICHIAKI ,  USHIDA MASAO

    IPC: G03F1/50 ,  G03F1/54

    CPC classification number: G03F1/50

    Abstract: PROBLEM TO BE SOLVED: To provide a mask blank and a photomask suitable for processes (such as a resist coating method, an etching method and a cleaning method) in a large mask for an FDP (flat panel display). SOLUTION: The mask blank for manufacturing an FPD device includes at least one of a light shielding film, and a semitransmitting film having a function of controlling the transmitted light quantity on a light transmitting substrate, wherein the light shielding film and the semitransmitting film show a square root average roughness Rq of 2.0 nm or less on the film surface. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种适合用于FDP（平板显示器）的大掩模中的工艺（例如抗蚀剂涂覆方法，蚀刻方法和清洁方法）的掩模坯料和光掩模。 解决方案：用于制造FPD器件的掩模板包括遮光膜和具有控制透光基板上透射光量的功能的半透膜中的至少一种，其中遮光膜和半透射膜 膜在膜表面上显示2.0nm以下的平方根平均粗糙度Rq。 版权所有（C）2007，JPO＆INPIT

    Method for manufacturing phase shift mask blank and phase shift mask
    6.
    发明专利
    Method for manufacturing phase shift mask blank and phase shift mask 有权
    用于制造相移屏蔽层和相位移屏蔽的方法

    公开(公告)号：JP2006276648A

    公开(公告)日：2006-10-12

    申请号：JP2005097852

    申请日：2005-03-30

    Applicant: Hoya Corp ,  Hoya株式会社

    Inventor： TAKEUCHI MEGUMI ,  SUZUKI TOSHIYUKI ,  USHIDA MASAO

    IPC: G03F1/32 ,  G03F1/54 ,  G03F1/68 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To achieve resistance to the high-temperature water of 80°C concerning an optical semi-transmission film which is optically designed using nitrogen, metal, and silicon as main components.
    SOLUTION: In a phase shift mask blank, an optical semi-transmission film which has a predetermined transmission to an exposure wavelength, and is optically designed using nitrogen, metal, and silicon as main components is formed on a transparent substrate. The phase shift mask blank contains oxygen in the optical semi-transmission film composed mainly of nitrogen, metal, and silicon within the range of maintaining the optical characteristics of the optical design using nitrogen, metal, and silicon as main components, and has achieved an improved resistance to high-temperature water of the optical semi-transmission film composed mainly of nitrogen, metal and silicon.
    COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：为了实现对使用氮，金属和硅作​​为主要成分光学设计的光学半透膜的80℃的高温水的耐受性。 解决方案：在相移掩模坯料中，在透明基板上形成具有预定透射率至曝光波长并以氮，金属和硅为光学设计的光半透膜。 在使用氮，金属和硅作​​为主要成分的光学设计的光学特性保持范围内，相移掩模空白在主要由氮，金属和硅组成的光半透膜中含有氧，并且已经实现了 改善主要由氮，金属和硅组成的光学半透膜的耐高温水性。 版权所有（C）2007，JPO＆INPIT

    METHOD FOR FORMING ELECTRODE MADE OF CHROME FILM
    7.
    发明专利
    METHOD FOR FORMING ELECTRODE MADE OF CHROME FILM 失效

    公开(公告)号：JPH06275827A

    公开(公告)日：1994-09-30

    申请号：JP6049893

    申请日：1993-03-19

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO ,  KANAI SHOJI

    IPC: H01L21/28 ,  H01L21/306 ,  H01L21/336 ,  H01L29/40 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

    Abstract: PURPOSE:To provide a method for forming an electrode made of chrome film suited for easily forming a gate electrode which is superb in chemical resistance and its side surface is virtually in a uniform taper shape within a substrate. CONSTITUTION:The title method of an electrode 4b made of chrome film has a process for forming a chrome film 4 which contains at least one type of element selected from a group consisting of nitrogen, carbon, and fluorine on a substrate 1 and whose element content is changed in thickness direction so that an etching speed is higher at its upper-layer part than at its lower-layer part and a process for forming a specific resist pattern 5a on the chrome film 4. Then, it also includes a process for inclining the side surface of the chrome film 4 toward outside for the thickness direction by etching the chrome film 4 along the resist pattern 5a by a specific etching liquid and then forming the side surface of the chrome film 4 in taper shape so that it forms a sharp angle for the substrate surface.

    PRODUCTION OF MOLD FOR FORMING FINE RUGGED PATTERN
    8.
    发明专利
    PRODUCTION OF MOLD FOR FORMING FINE RUGGED PATTERN 失效

    公开(公告)号：JPH05114173A

    公开(公告)日：1993-05-07

    申请号：JP27417491

    申请日：1991-10-22

    Applicant: HOYA CORP

    Inventor： USHIDA MASAO

    IPC: B29C33/38 ,  B29C39/02 ,  B29C39/26 ,  B29L17/00 ,  G11B7/24 ,  G11B7/26

    Abstract: PURPOSE:To obtain fine rugged patterns having a desired uniformly tapered shape on the flanks of projecting parts by forming metallic films having two- layered structures varying in etching speed on a substrate, forming fine resist patterns thereon and etching the patterns. CONSTITUTION:The metallic film 2 contg. chromium nitride and chromium carbonate having a desired film thickness is formed on a quartz glass substrate 1. The metallic film 3 which varies in the degree of nitriding, etc., from the film 2 and is higher in the etching rate than the film 2 is formed on the film 2. The resist film 4 is then formed on the film 3 and the fine patterns 4a are formed on the film 4. The chromium patterns 5 consisting of the chromium layers 2a which are inclined in the flanks toward the outer side in the depth direction and have a tapered shape and the chromium layers 3a having the perpendicular flanks are obtd. if the films 2, 3 are etched by using a prescribed etching liquid. The molds for forming the desired fine rugged patterns are obtd. in this way.

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