公开(公告)号：SG81271A1

公开(公告)日：2001-06-19

申请号：SG1999001658

申请日：1999-04-12

Applicant: IBM

Inventor： COHEN STEPHEN A ,  MCFEELY FENTON READ ,  NOYAN CEVDET I ,  RODBELL KENNETH P ,  YURKAS JOHN J ,  ROSENBURG ROBERT

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/12

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.

公开(公告)号：CA2009247C

公开(公告)日：1993-04-06

申请号：CA2009347

申请日：1990-02-05

Applicant: IBM

Inventor： RODBELL KENNETH P ,  TOTTA PAUL A ,  WHITE JAMES F

IPC: E04F13/21 ,  B60R9/00 ,  B60R13/01 ,  H01L23/532

Abstract: A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (