公开(公告)号：EP1595275A4

公开(公告)日：2007-10-31

申请号：EP04705302

申请日：2004-01-26

Applicant: IBM

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L23/532 ,  H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1≤v≤0.9, 0≤w≤0.5, 0.01≤x≤0.9, 0≤y≤0.7, 0.01≤z≤0.8 for v+w+x+y+Z=1. The ceramic diffusion barrier acts as a diffusion barrier to metals, i.e., copper. The present invention also comprises a method for forming the inventive ceramic diffusion barrier including the steps depositing a polymeric preceramic having a composition SivNwCxOyHz, where 0.1

公开(公告)号：JPH11330006A

公开(公告)日：1999-11-30

申请号：JP11757899

申请日：1999-04-26

Applicant: IBM

Inventor： COHEN STEPHEN A ,  MCFEELY FENTON R ,  NOYAN CEVDET I ,  RODBELL KENNETH P ,  YURKAS JOHN J ,  ROSENBERG ROBERT

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To obtain a new barrier layer which fulfills all standards by forming an alpha phase tungsten barrier layer in a trench or a via, having a mutual bonding structure by using a chemical low temperature/low pressure air phase adhesion technology. SOLUTION: A dielectric 22 is formed on a semiconductor substrate 20 and a trench or a via having a mutual bonding structure is formed on the surface of the dielectric 22. An alpha phase tungsten barrier layer 24 is formed in the trench or the via through the use of chemical low temperature/low pressure air phase adhesion technology method and an arbitrarily selected metallic seed layer 26 is laminated and formed thereon. Additionally conductive material 28 is embedcred in the trench or the via and an alpha phase tungsten barrier layer 25, a dielectric 30 and an electrode 32 are successively formed thereon. In this case a barrier layer 36, made of such materials as alpha tungsten and so on which protects a contact of the conductor 28 with the dielectric 22, is formed.

公开(公告)号：WO2004068550A3

公开(公告)日：2005-10-27

申请号：PCT/US2004002125

申请日：2004-01-26

Applicant: IBM ,  COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

Inventor： COHEN STEPHEN A ,  GATES STEPHAN M ,  HEDRICK JEFFREY C ,  HUANG ELBERT E ,  PFEIFFER DIRK

IPC: H01L20060101 ,  H01L21/00 ,  H01L21/312 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532

CPC classification number: H01L21/02282 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/31663 ,  H01L2924/00

Abstract: The present invention comprises an interconnect structure including a metal, interlayer dielectric and a ceramic diffusion barrier formed therebetween where the ceramic diffusion barrier has a composition, SivNwCxOyHz, where 0.1

Abstract translation: 本发明包括在其间形成的金属，层间电介质和陶瓷扩散阻挡层的互连结构，其中陶瓷扩散阻挡层具有组成SivNwCxOyHz，其中0.1 <= v <= 0.9,0 <= w <= 0.5,0.01 < = x <= 0.9,0 <= y <= 0.7,0.01 <= z <= 0.8对于v + w + x + y + Z = 1。 陶瓷扩散阻挡层用作金属的扩散阻挡层，即铜。 本发明还包括一种用于形成本发明的陶瓷扩散阻挡层的方法，包括沉积具有组成SivNwCxOyHz的聚合物预陶瓷的步骤，其中0.1

公开(公告)号：SG81271A1

公开(公告)日：2001-06-19

申请号：SG1999001658

申请日：1999-04-12

Applicant: IBM

Inventor： COHEN STEPHEN A ,  MCFEELY FENTON READ ,  NOYAN CEVDET I ,  RODBELL KENNETH P ,  YURKAS JOHN J ,  ROSENBURG ROBERT

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/12

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.