公开(公告)号：JPH11330006A

公开(公告)日：1999-11-30

申请号：JP11757899

申请日：1999-04-26

Applicant: IBM

Inventor： COHEN STEPHEN A ,  MCFEELY FENTON R ,  NOYAN CEVDET I ,  RODBELL KENNETH P ,  YURKAS JOHN J ,  ROSENBERG ROBERT

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To obtain a new barrier layer which fulfills all standards by forming an alpha phase tungsten barrier layer in a trench or a via, having a mutual bonding structure by using a chemical low temperature/low pressure air phase adhesion technology. SOLUTION: A dielectric 22 is formed on a semiconductor substrate 20 and a trench or a via having a mutual bonding structure is formed on the surface of the dielectric 22. An alpha phase tungsten barrier layer 24 is formed in the trench or the via through the use of chemical low temperature/low pressure air phase adhesion technology method and an arbitrarily selected metallic seed layer 26 is laminated and formed thereon. Additionally conductive material 28 is embedcred in the trench or the via and an alpha phase tungsten barrier layer 25, a dielectric 30 and an electrode 32 are successively formed thereon. In this case a barrier layer 36, made of such materials as alpha tungsten and so on which protects a contact of the conductor 28 with the dielectric 22, is formed.

公开(公告)号：SG81271A1

公开(公告)日：2001-06-19

申请号：SG1999001658

申请日：1999-04-12

Applicant: IBM

Inventor： COHEN STEPHEN A ,  MCFEELY FENTON READ ,  NOYAN CEVDET I ,  RODBELL KENNETH P ,  YURKAS JOHN J ,  ROSENBURG ROBERT

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L29/12

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.