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公开(公告)号:CA2669907C
公开(公告)日:2014-12-09
申请号:CA2669907
申请日:2007-09-25
Applicant: IBM
Inventor: DELIGIANNI HARIKLIA , HUANG QIANG , ROMANKIW LUBOMYR T
Abstract: A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1), and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
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公开(公告)号:CA2669907A1
公开(公告)日:2008-07-10
申请号:CA2669907
申请日:2007-09-25
Applicant: IBM
Inventor: ROMANKIW LUBOMYR T , DELIGIANNI HARIKLIA , HUANG QIANG
Abstract: A memory storage device that contains alternating first and second ferrom agnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1) , and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
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公开(公告)号:DE3071162D1
公开(公告)日:1985-11-14
申请号:DE3071162
申请日:1980-06-24
Applicant: IBM
Inventor: MIERSCH EKKEHARD F , ROMANKIW LUBOMYR T
IPC: H05K1/05 , H01L21/60 , H01L23/12 , H01L23/14 , H01L23/52 , H01L23/538 , H05K1/11 , H05K3/32 , H05K3/46 , H01L23/54 , H05K1/00
Abstract: The board includes two parallel power plates (10, 11) separated by a dielectric layer (not shown). The plates (10, 11) are comprised of two mating metal sheets and are each provided with integral conductive pads (42, 40) and openings (41, 43). After assembly of the two plates (10, 11) and interleaved dielectric layer (not shown), each pad (40, 42) on the two plates is inserted into the coaxial opening (41, 43) in the opposite plate so as to form on the outside surfaces of the two plates (10, 11) areas comprising connection terminals for connecting LSI chips. Each of these area is insulated from the coplanar surrounding metal plate area by the dielectric layer (not shown).
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公开(公告)号:CA1171381A
公开(公告)日:1984-07-24
申请号:CA347879
申请日:1980-03-18
Applicant: IBM
Inventor: MELCHER ROBERT L , ROMANKIW LUBOMYR T , VON GUTFELD ROBERT J
IPC: H05K3/06 , B23K26/12 , C23F1/02 , C23F4/00 , C25F3/14 , H01L21/306 , H01L21/3213 , H05K3/22 , B23P1/00
Abstract: A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the etching rate in the base of electrochemical machining by a factor of 103 to 104. Such enhancement is sufficient to make masking unnecessary.
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公开(公告)号:CA1159792A
公开(公告)日:1984-01-03
申请号:CA410149
申请日:1982-08-25
Applicant: IBM
Inventor: CASTELLANI EUGENE E , POWERS JOHN V , ROMANKIW LUBOMYR T
IPC: C25D3/56
Abstract: MAGNETOSTRICTIVE ALLOY THIN FILM ELECTROPLATING METHOD A thin film of low magnetostriction Permalloy* 80% nickel - 20% iron + 1% is electroplated onto a substrate in a bath having a ratio of from 5.8:1 to 23:1 ratio of Ni to Fe ions with a plating current density from 10 ma/cm2 - 200 ma/cm2 when plating in sheet form or an Ni/Fe ratio of from 25:1 to 86:1 with a current density of from 2 ma/cm2 - 60 ma/cm2 when plating through a mask. The fluid in the system is constantly mixed, replenished with fresh iron, acid, and other reagents, is adjusted in temperature and subjected to a continuous laminar regime of mixing. The Fe++ ion concentration required is inverse to the circulation of bath fluid across the substrate. Fresh solution is added to the bath from a reservoir where the above adjustments are made. The inlet for the fresh solution is at the lower end of the plating chamber and directed at a bath mixer which includes a slot through which the fresh solution is directed to optimize mixing in the plating chamber. Complexing agents are avoided. High speed plating is obtained with about 24.4 g/l of Ni++, 1.05 g/l of Fe , 25 g/l of H3BO3, 0.2 g/l of Na saccharin and a pH of 1.5 to 3.6. * Trade Mark
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公开(公告)号:CA1009749A
公开(公告)日:1977-05-03
申请号:CA186207
申请日:1973-11-20
Applicant: IBM
Inventor: BAJOREK CHRISTOPHER H , ROMANKIW LUBOMYR T , THOMPSON DAVID A
Abstract: 1450204 Magnetic heads INTER. NATIONAL BUSINESS MACHINES CORP 9 Nov 1973 [29 Dec 1972] 52064/73 Heading G5R [Also in Division H3] A magnetic sensing head comprises a unitary structure of a layer of magneto-resistive material 16 for sensing a magnetic field and an adjacent biasing layer 14 of permantly magnetized material to bias the layer 16 magnetically to a required operating range, layers 14 and 16 being in direct contact with one another. The layers 14 and 16 may be co-planar or laminated, with the direction of magnetization, arrow M h , of bias layer 14 parallel or perpendicular to the easy axis and sense current direction, arrow I, of layer 16. Layer 16 is of permalloy material, e.g. Ni-Fe, Ni-Co or Ni-Fe-Co, and the bias layer 14 may be of ferrite. Layers 14,16, may be evaporated, sputtered or electroplated on a substrate 12 with thicknesses of 200 to 2000 and 50 to 400 Šngstroms respectively. The bias may be established due to exchange or epitaxially coupled layers 14, 16, there being direct atomic contact between the layers. In another form the biasing layer 14 is a composite layer comprising exchange or epitaxially coupled films with a magnetically soft film atomically coupled to a magnetically hard film, e.g. Ni-Fe deposited on a Fe 2 O 3 , a Fe 2 O 3 on Ni-Fe, Co or Co-rich Ni-Co on vanadium or chromium, or binary Co-P. In a further form, the bias layer, or two bias layers with the sensing layer therebetween, is or are formed by preferentially oxiding one or both surfaces of a permalloy sensor strip. Alternatively such surfaces may have localized zones with a raised coercivity produced by chemical reaction with chlorides or sulphates, etching to roughen the surfaces, or by selective deposition of materials which exchange couple to the sensing layer. The combined sensing and bias layers may be surrounded by a magnetic shield (8) in a record head, Fig. 1 (not shown). The head may be used for reading tapes, discs, magnetic ink, or sheets capable of generating and transporting magnetic bubble domains.
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公开(公告)号:FR2298845A1
公开(公告)日:1976-08-20
申请号:FR7540377
申请日:1975-12-23
Applicant: IBM
Inventor: ROMANKIW LUBOMYR T , SLUSARCZUK MARKO M G , THOMPSON DAVID A
IPC: G11C11/08 , G02F1/09 , G02F1/167 , G09F9/37 , G11C19/02 , G11C19/08 , G09F13/24 , G09X , G11C11/14
Abstract: A magnetizable fluid which serves as a display liquid and which includes a suspension of colloidal magnetic particles is used in a display device. The magnetic fluid is opaque to provide optical contrast. A host liquid is substantially immiscible with the display liquid. The display liquid is carried in a reservoir section which is distributed about the periphery of a display field in the reservoir. Each propagation line of the display field is provided with a bubble generator, which passes bubbles by the input end of each line. A bubble switch coil draws selected bubbles across a gap to reach the associated propagation line in response to a signal impressed on the coil. A uniform rotating magnetic field is provided by a permanent magnet beneath the display or by orthogonal magnetic coils.
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公开(公告)号:CA976667A
公开(公告)日:1975-10-21
申请号:CA171135
申请日:1973-05-08
Applicant: IBM
Inventor: OLSEN JUDITH D , ROMANKIW LUBOMYR T
Abstract: 1422466 Electro-plating fine holes INTERNATIONAL BUSINESS MACHINES CORP 15 March 1973 [9 June 1972] 12475/73 Heading C7B A method of electro-plating the surface of a hole extending through a substrate comprises providing a hole extending through the substrate which hole has a tapering cross-sectional area, and electroplating the hole, e.g. with copper whilst flowing electrolyte therethrough in the direction of decreasing cross-sectional area. Alternatively the hole may taper from both surfaces of the substrate towards the centre thereof; the direction of electrolyte through the hole being periodically reversed. Electro-deposition may be continued to substantially fill the hole with deposited metal. The initial hole may be formed using a laser or electron beam, and optionally forming an etchant through the hole so formed. A non-conductive substrate may be rendered conductive by electroless plating, or by thermal decomposition of an organo-metallic complex. The apparatus shown allows electroplating of holes 2 in substrate 17 positioned as cathode between anodes 16 of Cu or Pt mesh, electrolyte being pumped through inlet/outlet ports 14, 15 either continuously or in alternate directions according to the shape of the holes to be plated. After plating electrolyte may be removed from the hole with compressed air and rinsing with water, alcohol or acetone. The substrate coated may be of alumina or sapphire.
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