公开(公告)号：DE102008028072A1

公开(公告)日：2009-01-22

申请号：DE102008028072

申请日：2008-06-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： POHL JENS ,  BRUNNBAUER MARKUS ,  ESCHER-POEPPEL IRMGARD ,  MEYER THORSTEN

IPC: H01L23/18

Abstract: A description is given of a device comprising a first semiconductor chip, a molding compound layer embedding the first semiconductor chip, a first electrically conductive layer applied to the molding compound layer, a through hole arranged in the molding compound layer, and a solder material filling the through hole.

公开(公告)号：DE102008016665A1

公开(公告)日：2008-10-16

申请号：DE102008016665

申请日：2008-04-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FUERGUT EDWARD ,  ESCHER-POEPPEL IRMGARD ,  BRUNNBAUER MARKUS

IPC: H01L21/52 ,  H01L21/54 ,  H01L23/18