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    42.
    发明专利
    未知

    公开(公告)号：FR2827706B1

    公开(公告)日：2004-04-09

    申请号：FR0209195

    申请日：2002-07-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ESMARK KAI ,  GOSSNER HARALD ,  RIESS PHILIPP ,  STADLER WOLGANG ,  STREIBL MARTIN ,  WENDEL MARTIN

    IPC: H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L29/74 ,  H01L23/62

    Abstract: The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (Rdiff 1 ) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff 2 ), which is less than the first differential resistance (Rdiff 1 ).

    ESD protection
    44.
    发明专利
    ESD protection 未知

    公开(公告)号：GB2382462A

    公开(公告)日：2003-05-28

    申请号：GB0216883

    申请日：2002-07-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ESMARK KAI ,  GOSSNER HARALD ,  RIESS PHILIPP ,  STADLER WOLFGANG ,  STREIBL MARTIN ,  WENDEL MARTIN

    IPC: H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L29/74 ,  H01L27/02 ,  H01C7/12 ,  H01L45/00

    Abstract: A circuit suitable as an ESD protective element where on occurrence of overvoltage, a low resistance non-destructive path is provided via a semiconductor resistor, which otherwise has a resistance of higher value, for example in a radio-frequency circuit (fig 5). The semiconductor component has a substrate 1, and a cuboid polysilicon strip 10 having electrical contacts 11 and 12. A controllable current source 15 provides the polysilicon strip 10 with a reversible response up to a critical upper current value, the strip having a first differential resistance R diff1 up to a current limit value I t corresponding to an upper voltage limit V 1 , and a second differential resistance R diff2 , less than R diff1 , at current levels above this (fig 2). In second embodiment (fig 4) the semiconductor strip is composed of separate strips of polysilicon (fig 4: 10a-d) having different dopings and lengths.

    45.
    发明专利
    未知

    公开(公告)号：FR2827706A1

    公开(公告)日：2003-01-24

    申请号：FR0209195

    申请日：2002-07-19

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ESMARK KAI ,  GOSSNER HARALD ,  RIESS PHILIPP ,  STADLER WOLGANG ,  STREIBL MARTIN ,  WENDEL MARTIN

    IPC: H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L29/74 ,  H01L23/62

    Abstract: The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (Rdiff 1 ) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff 2 ), which is less than the first differential resistance (Rdiff 1 ).

    OPERATING METHOD FOR A SEMICONDUCTOR COMPONENT
    46.
    发明专利
    OPERATING METHOD FOR A SEMICONDUCTOR COMPONENT 未知

    公开(公告)号：CA2393668A1

    公开(公告)日：2003-01-20

    申请号：CA2393668

    申请日：2002-07-16

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ESMARK KAI ,  STADLER WOLFGANG ,  GOSSNER HARALD ,  WENDEL MARTIN ,  STREIBL MARTIN ,  RIESS PHILIPP

    IPC: H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L29/74 ,  H01L23/52

    Abstract: The present invention creates an operating method for a semiconductor component having a substrate (1; 5); having a conductive polysilicon strip (10; l0a-d) which is applied to the substrate (1; 5); having a first and a second electrical contact (11, 12; 11a-d, 12a-d) which are connected to the conductive polysilicon strip (10; 10a-d) such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (R diff1) up to a current limit value (I t) corresponding to an upper voltage limit value (V t) and, at current values greater than this, has a second differential resistance (R diff2), which is less than the first differential resistance (R diff1).

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