公开(公告)号：US12062631B2

公开(公告)日：2024-08-13

申请号：US17025181

申请日：2020-09-18

Applicant: Intel Corporation

Inventor： Adel A Elsherbini ,  Krishna Bharath ,  Kevin P. O'Brien ,  Kimin Jun ,  Han Wui Then ,  Mohammad Enamul Kabir ,  Gerald S. Pasdast ,  Feras Eid ,  Aleksandar Aleksov ,  Johanna M. Swan ,  Shawna M. Liff

IPC: H01L23/00 ,  H01L25/065 ,  H01L49/02

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/09055 ,  H01L2224/09505 ,  H01L2224/29186 ,  H01L2224/32145

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.

公开(公告)号：US11955426B2

公开(公告)日：2024-04-09

申请号：US17839337

申请日：2022-06-13

Applicant: INTEL CORPORATION

Inventor： Huong Do ,  Kaladhar Radhakrishnan ,  Krishna Bharath ,  Yikang Deng ,  Amruthavalli P. Alur

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L23/5227 ,  H01L21/76816 ,  H01L23/5226 ,  H01L23/66 ,  H01L28/10 ,  H01L2223/6672

Abstract: A microelectronics package comprising a substrate, the substrate comprising a dielectric and at least first and second conductor level within the dielectric, where the first and second conductor levels are separated by at least one dielectric layer. The microelectronics package comprises an inductor structure that comprises a magnetic core. The magnetic core is at least partially embedded within the dielectric. The inductor structure comprises a first trace in the first conductor level, a second trace in the second conductor level, and a via interconnect connecting the first and second traces. The first trace and the second trace extend at least partially within the magnetic core.

公开(公告)号：US20230162902A1

公开(公告)日：2023-05-25

申请号：US17531954

申请日：2021-11-22

Applicant: Intel Corporation

Inventor： Numair Ahmed ,  Kyu Oh Lee ,  Sri Chaitra Jyotsna Chavali ,  Vijaya Boddu ,  Krishna Bharath ,  Robert L. Sankman

IPC: H01F27/02 ,  H01F41/02 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01F27/022 ,  H01F41/0206 ,  H01L23/49822 ,  H01L23/49827 ,  H01L21/4857 ,  H01L21/486

Abstract: An electronic device and associated methods are disclosed. In one example, the electronic device includes a package with integrated inductors. In selected examples, the package includes a core layer having a core thickness and through holes. The package further includes inductor structures within the through holes, such that an inductor structure has a length exceeding the core thickness.

公开(公告)号：US11462463B2

公开(公告)日：2022-10-04

申请号：US16145059

申请日：2018-09-27

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Kaladhar Radhakrishnan ,  Krishna Bharath ,  Shawna M. Liff ,  Johanna M. Swan

IPC: H01L23/498 ,  H01L23/522 ,  H01L23/64 ,  H01F27/24 ,  H01L49/02 ,  G05F1/46 ,  H01L23/00

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface; and a chiplet having a first surface and an opposing second surface, wherein the chiplet is between the surface of the package substrate and the first surface of the die, wherein the first surface of the chiplet is coupled to the surface of the package substrate and the second surface of the chiplet is coupled to the first surface of the die, and wherein the chiplet includes: a capacitor at the first surface; and an element at the second surface, wherein the element includes a switching transistor or a diode.

公开(公告)号：US20210398895A1

公开(公告)日：2021-12-23

申请号：US16907797

申请日：2020-06-22

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Feras Eid ,  Georgios Dogiamis ,  Beomseok Choi ,  Henning Braunisch ,  William Lambert ,  Krishna Bharath ,  Johanna Swan

IPC: H01L23/50 ,  H05K1/18 ,  H01L23/367 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: An integrated circuit assembly may be fabricated having an electronic substrate, an integrated circuit device having a first surface, an opposing second surface, at least one side extending between the first surface and the second surface, and at least one through-substrate via extending into the integrated circuit device from the second surface, wherein the first surface of the integrated circuit device is electrically attached to the electronic substrate; and at least one power delivery route electrically attached to the second surface of the integrated circuit device and to the electronic substrate, wherein the at least one power delivery route is conformal to the side of the integrated circuit device and the first surface of the electronic substrate.

公开(公告)号：US20210193595A1

公开(公告)日：2021-06-24

申请号：US16721327

申请日：2019-12-19

Applicant: INTEL CORPORATION

Inventor： Adel A. Elsherbini ,  Krishna Bharath ,  Feras Eid ,  Johanna M. Swan ,  Aleksandar Aleksov ,  Veronica Aleman Strong

IPC: H01L23/60 ,  H05K1/18 ,  H01L27/02 ,  H01L23/00 ,  H01L23/498

Abstract: Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). For example, in some embodiments, an IC package support may include: a first conductive structure in a dielectric material; a second conductive structure in the dielectric material; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a polymer, and the material is different from the dielectric material. The material may act as a dielectric material below a trigger voltage, and as a conductive material above the trigger voltage.

公开(公告)号：US10651525B2

公开(公告)日：2020-05-12

申请号：US15997644

申请日：2018-06-04

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew Manusharow ,  Krishna Bharath ,  Zhichao Zhang ,  Yidnekachew S. Mekonnen ,  Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Javier Soto

IPC: H01P3/06 ,  H01P3/02 ,  H05K1/02 ,  H01P3/08

Abstract: Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.

公开(公告)号：US20200098621A1

公开(公告)日：2020-03-26

申请号：US16140398

申请日：2018-09-24

Applicant: Intel Corporation

Inventor： Krishna Bharath ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Kaladhar Radhakrishnan ,  Zhiguo Qian ,  Johanna M. Swan

IPC: H01L21/768

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a first surface and an opposing second surface, wherein the first die is in a first dielectric layer; a magnetic core inductor, having a first surface and an opposing second surface, in the first dielectric layer, wherein the magnetic core inductor may include a first conductive pillar at least partially surrounded by a magnetic material, and a second conductive pillar coupled to the first conductive pillar; and a second die having a first surface and an opposing second surface, wherein the second die is in a second dielectric layer, and wherein the first surface of the second die is coupled to the second surface of the magnetic core inductor.

公开(公告)号：US20200066634A1

公开(公告)日：2020-02-27

申请号：US16107757

申请日：2018-08-21

Applicant: Intel Corporation

Inventor： Huong Do ,  Kaladhar Radhakrishnan ,  Krishna Bharath ,  Yikang Deng ,  Amruthavalli P. Alur

IPC: H01L23/522 ,  H01L49/02 ,  H01L21/768 ,  H01L23/66

Abstract: A microelectronics package comprising a substrate, the substrate comprising a dielectric and at least first and second conductor level within the dielectric, where the first and second conductor levels are separated by at least one dielectric layer. The microelectronics package comprises an inductor structure that comprises a magnetic core. The magnetic core is at least partially embedded within the dielectric. The inductor structure comprises a first trace in the first conductor level, a second trace in the second conductor level, and a via interconnect connecting the first and second traces. The first trace and the second trace extend at least partially within the magnetic core.

公开(公告)号：US10186465B2

公开(公告)日：2019-01-22

申请号：US15748138

申请日：2015-09-25

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel A. Elsherbini ,  Henning Braunisch ,  Yidnekachew S. Mekonnen ,  Krishna Bharath ,  Mathew J. Manusharow ,  Aleksandar Aleksov ,  Nathan Fritz

IPC: H01L23/14 ,  H01L23/12 ,  H01L23/473 ,  H01L21/48 ,  H01L23/538 ,  H01L23/492

Abstract: Embodiments of the invention include package substrates that include microchannels and methods of making such package substrates. In an embodiment, the package substrate may include a first package layer. In some embodiments, a bottom channel wall may be formed over the first package layer. Embodiments may also include a channel sidewall that is formed in contact with the bottom channel wall. An organic dielectric layer may be formed over the first package layer. However, embodiments include a package substrate where the dielectric layer is not present within a perimeter of the channel sidewall. Additionally, a top channel wall may be supported by the channel sidewall. According to an embodiment, the top channel wall, the channel sidewall, and the bottom channel wall define a microchannel.