公开(公告)号：US20250113503A1

公开(公告)日：2025-04-03

申请号：US18478840

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Nicolas Butzen ,  Harish K. Krishnamurthy ,  Khondker Ahmed ,  Nachiket Desai ,  Su Hwan Kim ,  Krishnan Ravichandran ,  Kaladhar Radhakrishnan ,  Jonathan Douglas

IPC: H01L23/00 ,  H01L23/498 ,  H01L25/065

Abstract: Embodiments herein relate to techniques to integrate a capacitive voltage regulator in an integrated circuit (IC) package. The voltage regulator may provide a power supply to one or more load domains in the IC package. The transistors of the voltage regulator may be included on the same die as one or more of the load domains, another die, and/or an interposer of the IC package. The capacitors may be included in the same die as the transistors, in the interposer, in a package layer (e.g., package core), and/or in the same die as one or more of the load domains. Accordingly, the voltage regulator can be integrated close to the relevant load domains, delivering power with short current paths and thereby providing reduced input impedance, output impedance, and associated losses compared with prior techniques. Other embodiments may be described and claimed.

公开(公告)号：US20250105144A1

公开(公告)日：2025-03-27

申请号：US18474160

申请日：2023-09-25

Applicant: Intel Corporation

Inventor： Su Hwan Kim ,  Harish K. Krishnamurthy ,  Nachiket Desai ,  Khondker Ahmed ,  Nicolas Butzen ,  Krishnan Ravichandran ,  Kaladhar Radhakrishnan

IPC: H01L23/522 ,  H01L23/498 ,  H01L25/065 ,  H02M3/335

Abstract: Embodiments herein relate to a voltage regular (VR) formed from die stacked on a package base layer. The die can include a load die stacked on a VR die, with an intermediate layer between the two dies. The VR can include an inductor or transformer as a charge transfer component formed between the dies. For example, the inductor or transformer windings can wind around the intermediate layer and include portions of top metal layers of the VR and load die, where the load die is inverted in the stack. The intermediate layer can be magnetic or non-magnetic for an inductor, or magnetic for a transformer. The VR can optionally be divided among two dies. The VR die may have a gallium nitride substrate to handle a higher input voltage, while the load die comprises a silicon substrate.

公开(公告)号：US20250104911A1

公开(公告)日：2025-03-27

申请号：US18474735

申请日：2023-09-26

Applicant: Intel Corporation

Inventor： Jaeil Baek ,  Brandon Christian Marin ,  Beomseok Choi ,  Kaladhar Radhakrishnan

IPC: H01F41/04 ,  H01L23/498 ,  H01L23/64

Abstract: Coaxial metal inductor loops and associated methods are disclosed. An example apparatus includes a substrate, first conductive material disposed along a first hole extending through the substrate, second conductive material disposed along a second hole extending through the substrate, and a magnetic material defining a continuous path completely encompassing both the first conductive material and the second conductive material in a plane perpendicular to an axis of the first hole.

公开(公告)号：US20240063202A1

公开(公告)日：2024-02-22

申请号：US17820968

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Thomas Sounart ,  Henning Braunisch ,  William J. Lambert ,  Kaladhar Radhakrishnan ,  Shawna M. Liff ,  Mohammad Enamul Kabir ,  Omkar G. Karhade ,  Kimin Jun ,  Johanna M. Swan

IPC: H01L25/18 ,  H01L23/522 ,  H01L49/02 ,  H01L23/00 ,  H01L23/498 ,  H01L23/48 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L23/5223 ,  H01L28/90 ,  H01L24/08 ,  H01L23/49811 ,  H01L23/481 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies in a dielectric material, adjacent layers in the plurality of layers being coupled together by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; a package substrate coupled to a first side of the plurality of layers by second interconnects; a support structure coupled to a second side of the plurality of layers by third interconnects, the second side being opposite to the first side; and capacitors in at least the plurality of layers or the support structure. The capacitors are selected from at least planar capacitors, deep trench capacitors and via capacitors.

公开(公告)号：US11830809B2

公开(公告)日：2023-11-28

申请号：US16829336

申请日：2020-03-25

Applicant: Intel Corporation

Inventor： Ying Wang ,  Yikang Deng ,  Junnan Zhao ,  Andrew James Brown ,  Cheng Xu ,  Kaladhar Radhakrishnan

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02

CPC classification number: H01L23/5227 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L28/10

Abstract: Disclosed herein are magnetic structures in integrated circuit (IC) package supports, as well as related methods and devices. For example, in some embodiments, an IC package support may include a conductive line, a magnetic structure around the conductive line, and material stubs at side faces of the magnetic structure.

公开(公告)号：US20230096368A1

公开(公告)日：2023-03-30

申请号：US17485243

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Adel Elsherbini ,  Johanna Swan ,  Feras Eid ,  Thomas L. Sounart ,  Henning Braunisch ,  Beomseok Choi ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  William J. Lambert

IPC: H01L49/02 ,  H01F27/255 ,  H01F27/28 ,  H01F41/04 ,  H01F41/02 ,  H01L23/498 ,  H01L23/64 ,  H01L21/48

Abstract: An inductor structure, a package substrate, an integrated circuit device, an integrated circuit device assembly and a method of fabricating the inductor structure. The inductor structure includes: an electrically conductive body; and a magnetic structure including a non-electrically-conductive magnetic material, wherein: one of the magnetic structure or the electrically conductive body wraps around another one of the magnetic structure or the electrically conductive body to form the inductor structure therewith; and at least one of the electrically conductive body or the magnetic structure has a granular microstructure including randomly distributed particles presenting substantially non-linear particle-to-particle boundaries with one another.

公开(公告)号：US20230095063A1

公开(公告)日：2023-03-30

申请号：US17484286

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Beomseok Choi ,  William J. Lambert ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  Adel Elsherbini ,  Henning Braunisch ,  Stephen Morein ,  Aleksandar Aleksov ,  Feras Eid

IPC: G05F1/44 ,  H01L23/50 ,  H01L25/065

Abstract: In one embodiment, an apparatus includes a first die with voltage regulator circuitry and a second die with logic circuitry. The apparatus further includes an inductor, a capacitor, and a conformal power delivery structure on the top side of the apparatus, where the voltage regulator circuitry is connected to the logic circuitry through the inductor, the capacitor, and the conformal power delivery structure. The conformal power delivery structure includes a first electrically conductive layer defining one or more recesses, a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer, and a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another.

公开(公告)号：US20220310512A1

公开(公告)日：2022-09-29

申请号：US17839337

申请日：2022-06-13

Applicant: INTEL CORPORATION

Inventor： Huong Do ,  Kaladhar Radhakrishnan ,  Krishna Bharath ,  Yikang Deng ,  Amruthavalli P. Alur

IPC: H01L23/522 ,  H01L49/02 ,  H01L23/66 ,  H01L21/768

Abstract: A microelectronics package comprising a substrate, the substrate comprising a dielectric and at least first and second conductor level within the dielectric, where the first and second conductor levels are separated by at least one dielectric layer. The microelectronics package comprises an inductor structure that comprises a magnetic core. The magnetic core is at least partially embedded within the dielectric. The inductor structure comprises a first trace in the first conductor level, a second trace in the second conductor level, and a via interconnect connecting the first and second traces. The first trace and the second trace extend at least partially within the magnetic core.

公开(公告)号：US11335616B2

公开(公告)日：2022-05-17

申请号：US16498775

申请日：2017-04-28

Applicant: Intel Corporation

Inventor： Malavarayan Sankarasubramanian ,  Yongki Min ,  Ashay A. Dani ,  Kaladhar Radhakrishnan

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/522

Abstract: A semiconductor package may include a composite magnetic inductor that is formed integral with the semiconductor substrate. The composite magnetic inductor may include a composite magnetic resin layer and a plurality of conductive layers arranged such that the composite magnetic resin layer is interleaved between successive conductive layers. The resultant composite magnetic inductor may be disposed between dielectric layers. A core layer may be disposed proximate the composite magnetic inductor. A build-up layer may be disposed proximate the core layer or proximate the composite magnetic inductor in a coreless semiconductor substrate. A semiconductor die may couple to the build-up layer. The composite magnetic inductor beneficially provides a greater inductance than external inductors coupled to the semiconductor package.

公开(公告)号：US10950555B2

公开(公告)日：2021-03-16

申请号：US16481031

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Kaladhar Radhakrishnan ,  Jaejin Lee ,  Hao-Han Hsu ,  Chung-Hao J. Chen ,  Dong-Ho Han

IPC: H01L23/66 ,  H01L23/552 ,  H01L21/48 ,  H01L23/498 ,  H01L25/18 ,  H05K1/18 ,  H01L23/64 ,  H01L49/02

Abstract: Semiconductor packages and a method of forming a semiconductor package are described. The semiconductor package has a foundation layer, a conductive layer formed in the foundation layer, and a magnetic layer formed between the conductive and the foundation layer. The conductive layer and the magnetic layer are coupled to form a low-profile inductor shield. The semiconductor package also has a dielectric layer formed between the magnetic and foundation layer. The foundation layer is mounted between a motherboard and a semiconductor die, where the foundation layer is attached to the motherboard with solder balls. Accordingly, the low-profile inductor shield may include a z-height that is less than a z-height of the solder balls. The low-profile inductor shield may have solder pads that are coupled to the conductive layer. The foundation layer may include at least one of voltage regulator and inductor, where the inductor is located above the low-profile inductor shield.