公开(公告)号：JP2005311070A

公开(公告)日：2005-11-04

申请号：JP2004125902

申请日：2004-04-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIRATO KAORI ,  SHIODA ATSUSHI

IPC: H01L21/768 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a laminate which can suitably be used as an interlayer insulating film in a semiconductor element and is superior in adhesiveness as a film formed by CVD method.
SOLUTION: The laminated body includes (A) a polybenzoxazole film, formed by condensing polybenzoxazole precursor, and (B) a film obtained by heating hydrolysis condensate obtained by hydrolyzing and condensing at least one type of compound selected from among a group consisting of compounds, expressed by general Formulas (1) to (4). In Formula (1) for HSi(OR
1 )
3 , R
1 shows a monovalent organic group. In Formula (2) R
a Si(OR
2 )
4-a , R shows fluorine atom or the monovalent organic group, R
2 the monovalent organic group and (a) integer of 1 to 2. In Formula (3) for Si(OR
3 )
4 , R
3 shows the monovalent organic group. In Formula (4) for R
4
b (R
5 O)
3-b Si-(R
8 )
d -Si(OR
6 )
3-c R
7
c , R
4 to R
7 are identical or different and show the monovalent organic group, (b) and (c) are identical or different and show the integers of 0 to 2, R
8 shows oxygen atom, a phenylene group or a group shown by -(CH
2 )
n -((n) is integer of 1 to 6), and (d) shows 0 or 1.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种适合用作半导体元件中的层间绝缘膜的层压体，并且作为通过CVD法形成的膜的粘合性优异。 ＆lt; P＆gt;解决方案：层压体包括（A）聚苯并恶唑前体缩合形成的聚苯并恶唑膜和（B）通过加热水解缩合物而得到的膜，所述缩合物通过水解和缩合至少一种选自 的化合物，由通式（1）至（4）表示。 在式（1）中，对于HSi（OR 1 ） 3 ，R SP 1表示一价有机基团。 在式（2）中，R“表示氟原子或一价有机基团，R SP（OR 2） > 2 一价有机基团，（a）1〜2的整数。在式（3）中，对于Si（OR 3，SP 3），SB 4， > 3 表示一价有机基团。 在式（4）中，对于R 4 （R SP 5）S 3 - SP> 8 ）ð -Si（OR 6 ） 3-C - [R 7 0〜2的整数R 8 表示氧原子，亚苯基或 - （CH 2 ）所示的基团。 （n）为1〜6的整数），（d）表示0或1.版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005175060A

公开(公告)日：2005-06-30

申请号：JP2003410203

申请日：2003-12-09

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIODA ATSUSHI

IPC: C09D183/16 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

CPC classification number: C09D183/16 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an insulating film low in dielectric constant and excellent in resistance to such processes as etching, ashing, or wet cleaning; and to provide an insulating film formed by this method. SOLUTION: The insulating film forming method includes a step of forming a polysiloxane-based insulating film on a substrate, a step of forming a polycarbosilane-based insulating film on the polysiloxane-based insulating film, and a step of forming a plasma CVD-deposited insulating film on the polycarbosilane-based insulating film. The polysiloxane-based insulating film is formed by hydrolytic condensation of at least one compound selected from the group consisting of monoalkylalkoxysilane, dialkylalkoxysilane, and tetraalkoxysilane. The polycarbosilane-based insulating film is formed by heating a coating film formed by application of a solution obtained by dissolving a polycarbosilane compound into a solvent. The insulating film thus obtained is described. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种形成绝缘膜的方法，该绝缘膜的介电常数低，并且耐蚀刻，灰化或湿式清洗等工艺具有优异的性能; 并提供通过该方法形成的绝缘膜。 解决方案：绝缘膜形成方法包括在基板上形成聚硅氧烷类绝缘膜的步骤，在聚硅氧烷类绝缘膜上形成聚碳硅烷类绝缘膜的工序和形成等离子体的工序 聚碳硅烷系绝缘膜上的CVD沉积绝缘膜。 所述聚硅氧烷类绝缘膜是通过至少一种选自单烷基烷氧基硅烷，二烷基烷氧基硅烷和四烷氧基硅烷的化合物的水解缩合形成的。 通过将通过将聚碳硅烷化合物溶解在溶剂中而得到的溶液形成的涂膜加热形成聚碳硅烷系绝缘膜。 对所得的绝缘膜进行说明。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005092014A

公开(公告)日：2005-04-07

申请号：JP2003327749

申请日：2003-09-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIRATO KAORI ,  MITA MICHIHIRO ,  SHIODA ATSUSHI

IPC: G03F7/11

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a thermally decomposable lower layer film for a multi-layered resist process used to form the thermally decomposable lower layer film which eliminates the need for an ashing treatment, can be decomposed and removed through a simple heat treatment, and never damages an inorganic film such as a Low-K film. SOLUTION: In the composition for forming the thermally decomposable lower layer film for the multi-layered resist process, a weight decrease rate is ≤5 wt.% when the film is heated for one hour at 300°C in an inert gas atmosphere or vacuum atmosphere and the weight decrease rate is ≥80 wt.% when the film is heated for one hour at 420°C in an inert gas atmosphere, a vacuum atmosphere, a reducing gas atmosphere, or mixed atmosphere of inert gas and reducing gas. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 待解决的问题：提供一种用于形成用于形成可分解下层膜的多层抗蚀剂工艺的可热分解下层膜的组合物，其不需要灰化处理，可以分解和除去 通过简单的热处理，并且不会损坏诸如Low-K膜的无机膜。 解决方案：在用于形成用于多层抗蚀剂工艺的可热分解下层膜的组合物中，当在惰性气体中在300℃下将膜加热1小时时，重量减少率≤5重量％ 气氛或真空气氛，当在惰性气体气氛，真空气氛，还原气体气氛或惰性气体的混合气氛中将膜在420℃下加热1小时时，重量减少率为≥80重量％ 加油站。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004186610A

公开(公告)日：2004-07-02

申请号：JP2002354512

申请日：2002-12-06

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YOSHIOKA MUTSUHIKO ,  HAYASHI EIJI ,  SUMIYA KOJI ,  SHIODA ATSUSHI

IPC: C09D5/25 ,  C09D183/16 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768

CPC classification number: C09D183/16 ,  H01L21/02123 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3121

Abstract: PROBLEM TO BE SOLVED: To obtain an etching stopper and a hard mask both of which are favorably used at the time of dry etching an interlayer insulating film composed of SiO
2 , a fluorine-doped SiO
2 , an organic/inorganic SOG (spin-on glass) material, a low-k film, etc., or at the time of dry etching a barrier film such as of SiN, SiC, SiCN, etc.
SOLUTION: An insulating film is composed of a film selected from among SiO
2 (silicon oxide) insulating film, an FSG (fluorine-doped silicon oxide) insulating film, an OSG (organosilicate glass) insulating film, a SiOC (carbon-doped silicon oxide) insulating film, an MSQ (methyl silsesquioxane) insulating film, an HSQ (hydrogen silsesquioxane) insulating film, the SOG (spin-on glass) insulating film, a polyorganosiloxane insulating film, the low-k (low dielectric) interlayer insulating film, and an organic polymer low-dielectric interlayer insulating film and an organic silicon polymer having a dry etching selection ratio. The insulating film has relative permittivity of ≤4.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003092294A

公开(公告)日：2003-03-28

申请号：JP2001281735

申请日：2001-09-17

Applicant: JSR CORP

Inventor： YOSHIOKA MUTSUHIKO ,  HAYASHI EIJI ,  SHIODA ATSUSHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain a film having proper contact with a substrate which contains Si and further contains one kind of element selected from among groups of O, C, N, and H. SOLUTION: A laminated film is characterized in that (A) a film formed by heating either a hydrolytic condensate obtained by hydrolyzation or condensing a silane compound essentially composed of trialkoxy silane and (B) a film formed by heating a hydrolytic condensate obtained by hydrolyzing and condensing a silane compound selected between organoalkoxy silane and tetra-alkoxy silane are laminated.

公开(公告)号：JP2001164185A

公开(公告)日：2001-06-19

申请号：JP2000220270

申请日：2000-07-21

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  HAYASHI EIJI ,  JO YOSHIHIDE ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: C09D183/04 ,  C09D183/02 ,  C09D183/14 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a polyorganosiloxane composition for forming film which yields a film that has a low dielectric constant and a high elastic modulus and thus is useful as an interlayer insulating film in a semiconductor device or the like. SOLUTION: The composition for forming film comprises (A) a condensate obtained by hydrolyzing at least one compound selected from the group consisting of the compounds represented by the following general formulae (1), (2), and (3) in the presence of an alkali metal catalyst, followed by condensing; and (B) a condensate obtained by hydrolyzing at least one compound selected from the group consisting of the compounds represented by the following general formulae (1), (2), and (3) in the presence of a metal chelating compound catalyst, followed by condensing. Ra(Si)(OR1)4-a (1) Si(OR2)4 (2) R3b(R4)3-b Si-(R7)d-Si(OR5)3-c R6c (3) (wherein R is a hydrogen atom, a fluorine atom, or a univalent organic group; R1-R6 is a univalent organic group; R7 is an oxygen atom, a phenylene group, or-(CH2)n-; a is an integer of 1-2; b and c are each a number of 0-2; d is 0 or 1; and n is an integer of 1-6).

公开(公告)号：JP2001115026A

公开(公告)日：2001-04-24

申请号：JP30046899

申请日：1999-10-22

Applicant: JSR CORP

Inventor： HAYASHI EIJI ,  JO YOSHIHIDE ,  KONNO KEIJI ,  KUROSAWA TAKAHIKO ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: C08L83/04 ,  C08G77/04

Abstract: PROBLEM TO BE SOLVED: To obtain a polyorganosiloxane-based composition capable of providing a film useful as an interlayer insulating film in a semiconductor element, etc., and having low dielectric constant and high modulus of elasticity. SOLUTION: (A) At least one kind of a compound selected from the group of (A-1): RaSi(OR1)4-a [R denotes H, F or a monovalent organic group; R1 denotes a monovalent organic group; and (a) denotes an integer of 1-2], (A-2): Si(OR2)4 (R2 denotes a monovalent organic group) and (A-3): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [R3 to R6 are same or different and denote each a monovalent organic group; b and c are same or different and denote each an integer of 0-2; R7 denotes O, phenylene group or a group represented by the following:-(CH2)n- (n is an integer of 1-6); and d denotes 0 or 1] is subjected to hydrolysis and condensation in the presence of (B) an alkaline catalyst and the obtained hydrolytic condensate is made to have 50,000-10,000,000 weight- average molecular weight.

公开(公告)号：JP2001002993A

公开(公告)日：2001-01-09

申请号：JP17769599

申请日：1999-06-24

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  HAYASHI EIJI ,  KONNO KEIJI ,  SHIODA ATSUSHI ,  YAMADA KINJI ,  GOTO KOHEI

IPC: C08L33/02 ,  C08L83/04 ,  C09D133/02 ,  C09D183/04

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for forming a film which is curable at

公开(公告)号：JP2001002992A

公开(公告)日：2001-01-09

申请号：JP17769499

申请日：1999-06-24

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  HAYASHI EIJI ,  KONNO KEIJI ,  SHIODA ATSUSHI ,  YAMADA KINJI ,  GOTO KOHEI

IPC: H01L21/312 ,  C09D133/04 ,  C09D183/04 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for forming a film which is curable at

公开(公告)号：JP2000303023A

公开(公告)日：2000-10-31

申请号：JP11628699

申请日：1999-04-23

Applicant: JSR CORP

Inventor： KUROSAWA TAKAHIKO ,  AKIIKE TOSHIYUKI ,  SHIODA ATSUSHI ,  YAMADA KINJI ,  GOTO KOHEI

IPC: H01L21/316 ,  C08G77/44 ,  C08L83/04 ,  C09D183/04 ,  H01B3/00

Abstract: PROBLEM TO BE SOLVED: To obtain a film-forming composition which can give a coating film having an excellent balance among uniformity, dielectric properties, cracking resistance, hygroscopicity, or the like, by hydrolytically condensing a first organosilane in the presence of a previously prepared hydrolytic condensate of the first organosilane with a second organosilane having another structure. SOLUTION: A solution is prepared by dissolving 100 pts.wt. mixture of 50-95 mol% (A) organosilane represented by formula I (e.g. methyltrimethoxysilane) with 5-50 mol% (B) organosilane represented by formula II (e.g. tetramethoxysilane) in 20-4,000 pts.wt. organic solvent (e.g. n-pentane). After the addition of 0.01-0.2 mol, per mol of components A and B, water and 0.001-20 pts.wt., per 100 pts.wt. components A and B, catalyst (e.g. organic acid), the solution is subjected to a hydrolytic condensation reaction. After the addition of 0.005-0.5 mol of component A, water, and a catalyst, the reaction mixture is further subjected to a hydrolytic condensation reaction to obtain a composition having a weight-average molecular weight of 1,000-120,000. In the formulae, R1 is a monovalent organic group; and R2 is an alkyl, or the like.