公开(公告)号：JP2005311069A

公开(公告)日：2005-11-04

申请号：JP2004125901

申请日：2004-04-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIRATO KAORI ,  SHIODA ATSUSHI

IPC: H01L21/768 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having a barrier layer which can fully suppress diffusion of copper on a conductive layer containing copper.
SOLUTION: The semiconductor device includes a substrate, the conductive layer 20 arranged on the substrate, and the barrier film 30 disposed above the conductive layer 20. The barrier film 30 is obtained by heating polybenzoxazole.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种具有阻挡层的半导体器件，其能够完全抑制铜在含铜导电层上的扩散。 解决方案：半导体器件包括衬底，布置在衬底上的导电层20和设置在导电层20上方的阻挡膜30.阻挡膜30通过加热聚苯并恶唑获得。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005200571A

公开(公告)日：2005-07-28

申请号：JP2004009207

申请日：2004-01-16

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAGAWA YASUSHI ,  AKIYAMA MASAHIRO ,  KUROSAWA TAKAHIKO ,  SHIODA ATSUSHI

IPC: C08G77/48 ,  C09D183/14 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a polymer which can form a film which is usable as, e.g., an interlayer insulation film in a semiconductor element or the like, has a low dielectric constant, is excellent in mechanical strength and adhesiveness, and has a homogeneous quality; and a method for producing the polymer. SOLUTION: In the polymer production method, (A) a hydrolyzable-group-containing silane monomer and/or its hydrolyzed condensate and (B) a cyclic carbosilane are mixed and heated. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供可以形成例如半导体元件等中的层间绝缘膜的膜形成的聚合物的介电常数低，机械强度和粘合性优异， 质量均匀; 和聚合物的制造方法。 解决方案：在聚合物制备方法中，（A）含可水解基团的硅烷单体和/或其水解缩合物和（B）环状碳硅烷混合并加热。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005183697A

公开(公告)日：2005-07-07

申请号：JP2003423047

申请日：2003-12-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SHIODA ATSUSHI

IPC: C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  C09D183/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/02118 ,  C08L83/14 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming an insulating film and the insulating film, wherein the insulating film at a low relative dielectric constant and excellent in resistance or the like to a process such as etching, ashing or wet cleaning can be formed. SOLUTION: The method for forming the insulating film contains steps of forming a polysiloxane series insulating film of a substrate, forming a polycarbosilane series insulating film on the polysiloxane series insulating film, and forming an organic series insulating film on the polycarbosilane series insulating film. The polysiloxane series insulating film is formed by hydrolyzing and condensing at least one kind of a silane compound selected from a group of compounds represented by a general formula (1): R a Si(OR 1 ) 4-a , a general formula (2): Si(OR 2 ) 4 , and a general formula (3): R 3 b (R 4 O) 3-b Si-(R 7 ) d -Si(OR 5 ) 3-c R 6 c , and the polycarbosilane series insulating film is formed by heating a coated film after coating a solution obtained by dissolving a polycarbosilane compound represented by a general formula (4) in a solvent. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于形成绝缘膜和绝缘膜的方法，其中在相对介电常数低的绝缘膜和电阻等方面优于诸如蚀刻，灰化或湿法清洗 可以形成。 解决方案：用于形成绝缘膜的方法包括以下步骤：在聚硅氧烷系列绝缘膜上形成聚硅氧烷系列绝缘膜，在聚硅氧烷系绝缘膜上形成聚碳硅烷系绝缘膜，并在聚碳硅烷系绝缘体上形成有机系列绝缘膜 电影。 聚硅氧烷系列绝缘膜是通过水解和缩合选自由通式（1）表示的化合物组中的至少一种硅烷化合物形成的：R Si（OR 1） 通式（2）：Si（OR SP＆gt; 2＆lt; SP＆gt;）＆lt; SB＆gt; 4＆lt; / SB＆gt;和通式（3） ）：R 3 b （R 4 O） / SP>）ð -Si（OR 5 ） 3-C - [R 6 C ，并且通过在将通式（4）表示的聚碳硅烷化合物溶解在溶剂中而获得的溶液涂布之后，通过加热涂膜来形成聚碳硅烷系绝缘膜。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003297832A

公开(公告)日：2003-10-17

申请号：JP2002093649

申请日：2002-03-29

Applicant: Jsr Corp ,  Jsr株式会社 ,  Toshiba Corp ,  株式会社東芝

Inventor： SHIODA ATSUSHI ,  MIYAJIMA HIDESHI

IPC: H01L21/3205 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a copper damassin structure wherein the mismatch of dynamical characteristics between inorganic insulating layers used for a copper diffusion prevention insulating layer, a wiring layer, and a via layer is eliminated, and troubles such as exfoliation and cracking ocurring in a CMP process in damascene formation and upon a heat cycle are solved.
SOLUTION: In the manufacture of a copper damassin structure, when copper and a barrier metal layer or either of them provided on an inorganic insulating film are chemically and mechanically polished, at least one kind of a metal oxide layer selected from among B, Al, Ga, In, Tl, Ge, Sn, Pb, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Zn, Cd, P, As, Sb, Bi, and Ce, or a silicon oxide layer with higher density than the inorganic insulating film is made to exist on the inorganic insulating film.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种铜大麻素结构，其中消除了用于铜扩散防止绝缘层，布线层和通孔层的无机绝缘层之间的动态特性的失配，以及诸如剥离和 解决了在大马士革形成和热循环中的CMP工艺中的破裂。 解决方案：在铜大麻素结构的制造中，当在无机绝缘膜上设置铜和阻挡金属层或其中的一种被化学和机械抛光时，至少一种金属氧化物层选自B ，Al，Ga，In，Tl，Ge，Sn，Pb，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo，W，Mn，Zn，Cd，P，As，Sb，Bi和Ce， 或者在无机绝缘膜上存在密度高于无机绝缘膜的氧化硅层。 版权所有（C）2004，JPO

公开(公告)号：JP2003110018A

公开(公告)日：2003-04-11

申请号：JP2001303199

申请日：2001-09-28

Applicant: JSR CORP

Inventor： SHIODA ATSUSHI ,  PATZ MATTHIAS ,  SEKIGUCHI MANABU

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To solve the problem in generation of peeling and crack which are generated in the CMP process to form damascene and in the heat cycle, by eliminating mismatch of dynamics characteristic among inorganic system insulation films used for copper diffusion preventing layer, wiring layer and via layer. SOLUTION: In this method of fabricating a copper damascene structure, an organic insulation film in the thickness of 1 to 100 nm is provided between an inorganic system insulation film and copper diffusion preventing layer, at the time of chemically and mechanically grinding the inorganic system insulation film formed on the copper diffusion preventing layer.

公开(公告)号：JP2003100738A

公开(公告)日：2003-04-04

申请号：JP2001291538

申请日：2001-09-25

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  SEKIGUCHI MANABU ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: B32B7/02 ,  B05D7/00 ,  B05D7/24 ,  C08G77/04 ,  C08G77/50 ,  C09D183/02 ,  C09D183/04 ,  C09D183/06 ,  C09D183/14 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain a forming method of an insulating film for a semiconductor, which is superior in adhesion to a film formed by the CVD (Chemical Vapor Deposition) method as an interlayer insulating film material, in a semiconductor element or the like. SOLUTION: A laminate is constituted by laminating a film (A) formed by heat curing an alkoxysilane compound hydrolysis condensate (a), with an average inertial radius of 10 to 30 nm and a film (B) formed by heat curing an alkoxysilane hydrolysis condensate (b) with an average inertial radius of less than 10 nm. The difference in the average inertial radii between the alkoxysilane hydrolysis condensate (a) and the alkoxysilane hydrolysis condensate (b) is more than 5 nm.

公开(公告)号：JP2003064305A

公开(公告)日：2003-03-05

申请号：JP2001256556

申请日：2001-08-27

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： HAYASHI EIJI ,  AKIYAMA MASAHIRO ,  HASEGAWA KOICHI ,  YOSHIOKA MUTSUHIKO ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: C08L83/00 ,  C08G77/08 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14

Abstract: PROBLEM TO BE SOLVED: To provide a film-forming composition capable of forming a silica- based film having high crack resistance of the coated film and small baking temperature dependence of relative dielectric constant as an interlaminar insulation material in a semiconductor element, etc. SOLUTION: This method for producing a film-forming composition comprises mixing (A) at least one kind of hydrolysis condensate obtained by hydrolyzing and condensing an alkoxysilane compound in the presence of water and a catalyst and having 10-30 nm average inertial radius with (B) at least one kind of hydrolysis condensate obtained by hydrolyzing and condensing an alkoxysilane compound in the presence of water and a catalyst and having an average inertial radius different by >=3 nm from average inertial radius of hydrolysis condensate in the component A.

Abstract translation: 要解决的问题：提供一种能够形成具有高的抗撕裂性的二氧化硅基膜的膜形成组合物和作为半导体元件等中的层间绝缘材料的相对介电常数的小的烘烤温度依赖性。解决方案 该成膜组合物的制造方法包括将（A）在水和催化剂的存在下使烷氧基硅烷化合物水解缩合而得到的水解缩合物中的至少一种，并且具有10-30nm的平均惯性半径与（B ）通过在水和催化剂的存在下水解和缩合烷氧基硅烷化合物并且具有与组分A中水解缩合物的平均惯性半径不同>> 3nm的平均惯性半径而获得的至少一种水解缩合物。

公开(公告)号：JP2002367984A

公开(公告)日：2002-12-20

申请号：JP2001175600

申请日：2001-06-11

Applicant: Jsr Corp ,  ジェイエスアール株式会社

Inventor： HAYASHI EIJI ,  SHIODA ATSUSHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a film that shows an extremely low relative dielectric constant of 2.2 or less and has improved mechanical strength as interlayer insulation in a semiconductor device and the like.
SOLUTION: In the formation method of a silica film, a film containing a siloxane compound (A) and a compound (B) that is compatible or dispersed to the constituent (A) is treated in a super-critical medium.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种显示出非常低的相对介电常数为2.2以下并且具有作为半导体器件等中的层间绝缘的机械强度的膜。 解决方案：在二氧化硅膜的形成方法中，在超临界介质中处理含有与组分（A）相容或分散的硅氧烷化合物（A）和化合物（B）的膜。

公开(公告)号：JP2002363491A

公开(公告)日：2002-12-18

申请号：JP2001175603

申请日：2001-06-11

Applicant: JSR CORP

Inventor： SHINODA TOMOTAKA ,  SUGIURA MAKOTO ,  YOSHIOKA MUTSUHIKO ,  SHIODA ATSUSHI ,  NISHIKAWA MICHINORI ,  YAMADA KINJI

IPC: C09D183/02 ,  C09D5/25 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To obtain a film-forming composition capable of giving a coating film having a low relative dielectric constant as an interlaminar electrical film material in a semiconductor device, or the like, and scarcely causing foreign materials even when stored as a varnish for a long period. SOLUTION: The film-forming composition contains (A) a hydrolyzed condensation product which is obtained by hydrolyzing and condensing an alkylalkoxysilane, (B) an organic solvent, and (C) a compound expressed by the formula (4): R R R Si-O-SiR R R (R to R are each an alkyl or an aryl, and are same or different from each other).

公开(公告)号：JP2002285086A

公开(公告)日：2002-10-03

申请号：JP2001086895

申请日：2001-03-26

Applicant: JSR CORP

Inventor： HAYASHI EIJI ,  NISHIKAWA MICHINORI ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: C09D183/02 ,  C09D1/00 ,  C09D133/00 ,  C09D171/00 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a composition capable of forming a silica film having a small water absorption and relative permittivity less than 2.1 to be used for a layer-to-layer insulation film of a semiconductor element. SOLUTION: The compound for forming the film contains A) a hydrolysis condensate of a silane compound of more than one kind in general formulas 1 to 3, Ra Si(OR )4-a ...(1) (R is H, F or a univalent organic group, R is a univalent organic group, a is an integer of 1-2), Si(OR )4 ...(2) (R is a univalent organic group), and R b (R O)3-b Si-(R )d -Si(OR )3-c R c ...(3) [R to R are each a univalent organic group, b and c are each an integer of 0-2, R is O, a phenylene group or -(CH2 )n - (n is an integer of 1-6), d is 0-1], B). Compound with its boiling point of decomposition temperature of 250-450 deg.C and compatible and dispersible with A and C) Organic solvent. The compound whose B portion is 50-250 wt. parts against A portion of 100 wt. parts (conversion as a complete hydrolysis condensate) is also provided.