RIBBON MATRIX MATERIAL FOR OPTICAL FIBER WITH EXCELLENT BENDING RESISTANCE
    1.
    发明申请
    RIBBON MATRIX MATERIAL FOR OPTICAL FIBER WITH EXCELLENT BENDING RESISTANCE 审中-公开
    用于具有优良弯曲电阻的光纤的RIBBON矩阵材料

    公开(公告)号:WO2008120983A2

    公开(公告)日:2008-10-09

    申请号:PCT/NL2008050178

    申请日:2008-03-28

    Abstract: The instant claimed invention is a curable liquid resin composition comprising: (A) a urethane (meth)acrylate having a structure derived from polypropylene glycol with a number average molecular weight of from about 500 to about 4,000; (B) a urethane (meth)acrylate having a bisphenol structure; and (C) a compound having one ethylenically unsaturated group, the component (C) containing isobornyl (meth)acrylate in an amount of from about 40 to about 80 mass% of the total 100 mass% of the component (C). This composition has been found to exhibit high Young's modulus of elasticity and excellent bending resistance. The curable liquid resin composition is suitable for use as a matrix material for optical fiber ribbons.

    Abstract translation: 本发明是一种可固化液体树脂组合物,其包含:(A)具有衍生自数均分子量为约500至约4,000的聚丙二醇的结构的氨基甲酸酯(甲基)丙烯酸酯; (B)具有双酚结构的氨基甲酸酯(甲基)丙烯酸酯; 和(C)具有一个烯键式不饱和基团的化合物,(C)成分(C)含有(C)成分的总计100质量%的约40〜约80质量%的(甲基)丙烯酸异冰片酯。 已经发现该组合物显示出高的杨氏弹性模量和优异的抗弯曲性。 可固化液体树脂组合物适合用作光纤带的基质材料。

    2.
    发明专利
    未知

    公开(公告)号:DE60043285D1

    公开(公告)日:2009-12-24

    申请号:DE60043285

    申请日:2000-09-28

    Applicant: JSR CORP

    Abstract: A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR )4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR )4 (wherein R represents a monovalent organic group), and compounds (3) represented by R b(R O)3-bSi-(R )d-Si(OR )3-cR c Äwherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1Ü; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an acid catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).

    3.
    发明专利
    未知

    公开(公告)号:DE602005006489D1

    公开(公告)日:2008-06-19

    申请号:DE602005006489

    申请日:2005-09-21

    Applicant: JSR CORP

    Abstract: A polycarbosilane, having a main chain in which silicon atoms and carbon atoms are alternately repeated, includes a repeating unit shown by a following general formula (1), a repeating unit shown by a following general formula (2), and a repeating unit shown by a following general formula (3).

    5.
    发明专利
    未知

    公开(公告)号:DE60033102T2

    公开(公告)日:2007-08-30

    申请号:DE60033102

    申请日:2000-09-28

    Applicant: JSR CORP

    Abstract: A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR )4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR )4 (wherein R represents a monovalent organic group), and compounds (3) represented by R b(R O)3-bSi-(R )d-Si(OR )3-cR c Äwherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1Ü; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of a metal chelate compound catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).

    6.
    发明专利
    未知

    公开(公告)号:DE60033102D1

    公开(公告)日:2007-03-15

    申请号:DE60033102

    申请日:2000-09-28

    Applicant: JSR CORP

    Abstract: A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR )4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR )4 (wherein R represents a monovalent organic group), and compounds (3) represented by R b(R O)3-bSi-(R )d-Si(OR )3-cR c Äwherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1Ü; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of a metal chelate compound catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).

    7.
    发明专利
    未知

    公开(公告)号:DE69716218T2

    公开(公告)日:2003-04-17

    申请号:DE69716218

    申请日:1997-11-20

    Applicant: JSR CORP

    Abstract: A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

    10.
    发明专利
    未知

    公开(公告)号:DE69716218D1

    公开(公告)日:2002-11-14

    申请号:DE69716218

    申请日:1997-11-20

    Applicant: JSR CORP

    Abstract: A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

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