Abstract:
The instant claimed invention is a curable liquid resin composition comprising: (A) a urethane (meth)acrylate having a structure derived from polypropylene glycol with a number average molecular weight of from about 500 to about 4,000; (B) a urethane (meth)acrylate having a bisphenol structure; and (C) a compound having one ethylenically unsaturated group, the component (C) containing isobornyl (meth)acrylate in an amount of from about 40 to about 80 mass% of the total 100 mass% of the component (C). This composition has been found to exhibit high Young's modulus of elasticity and excellent bending resistance. The curable liquid resin composition is suitable for use as a matrix material for optical fiber ribbons.
Abstract:
A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR )4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR )4 (wherein R represents a monovalent organic group), and compounds (3) represented by R b(R O)3-bSi-(R )d-Si(OR )3-cR c Äwherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1Ü; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an acid catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).
Abstract:
A polycarbosilane, having a main chain in which silicon atoms and carbon atoms are alternately repeated, includes a repeating unit shown by a following general formula (1), a repeating unit shown by a following general formula (2), and a repeating unit shown by a following general formula (3).
Abstract:
A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR )4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR )4 (wherein R represents a monovalent organic group), and compounds (3) represented by R b(R O)3-bSi-(R )d-Si(OR )3-cR c Äwherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1Ü; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of a metal chelate compound catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).
Abstract:
A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of an alkali catalyst, at least one member selected from the group consisting of compounds (1) represented by RaSi(OR )4-a (wherein R represents hydrogen, fluorine, or a monovalent organic group; R represents a monovalent organic group; and a Is an integer of 1 or 2), compounds (2) represented by Si(OR )4 (wherein R represents a monovalent organic group), and compounds (3) represented by R b(R O)3-bSi-(R )d-Si(OR )3-cR c Äwherein R to R may be the same or different and each represent a monovalent organic group; b and c may be the same or different and each are an integer of 0 to 2; R represents oxygen, phenylene, or a group represented by -(CH2)n-, wherein n is an integer of 1 to 6; and d is 0 or 1Ü; and (B) a product of hydrolysis and condensation obtained by hydrolyzing and condensing, in the presence of a metal chelate compound catalyst, at least one member selected from the group consisting of the compounds (1), (2), and (3).
Abstract:
A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.
Abstract:
A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.