Abstract:
A Micro Electromechanical System (MEMS) pressure sensor may include a first substrate provided with a sensitive diaphragm of a capacitive pressure sensing unit, an electrical connecting layer and a first bonding layer on a surface of the first substrate; and a second substrate provided with an inter-conductor dielectric layer, a conductor connecting layer in the inter-conductor dielectric layer and/or a second bonding layer on a surface of the second substrate. The second substrate is arranged opposite to the first substrate, and the second substrate is fixedly coupled to the first substrate via the first bonding layer and the second bonding layer; a pattern of the first bonding layer is corresponding to a pattern of the second bonding layer, and both the first bonding layer and the second bonding layer are formed of a conductive material.
Abstract:
A device structure is made using a first conductive layer over a first wafer. An isolated conductive region is formed in the first conductive layer surrounded by a first opening in the conductive layer. A second wafer has a first insulating layer and a conductive substrate, wherein the conductive substrate has a first major surface adjacent to the first insulating layer. The insulating layer is attached to the isolated conductive region. The conductive substrate is thinned to form a second conductive layer. A second opening is formed through the second conductive layer and the first insulating layer to the isolated conductive region. The second opening is filled with a conductive plug wherein the conductive plug contacts the isolated conductive region. The second conductive region is etched to form a movable finger over the isolated conductive region. A portion of the insulating layer under the movable finger is removed.
Abstract:
A micro or nano electromechanical transducer device formed on a semiconductor substrate comprises a movable structure which is arranged to be movable in response to actuation of an actuating structure. The movable structure comprises a mechanical structure comprising at least one mechanical layer having a first thermal response characteristic and a first mechanical stress response characteristic, at least one layer of the actuating structure, the at least one layer having a second thermal response characteristic different to the first thermal response characteristic and a second mechanical stress response characteristic different to the first mechanical stress response characteristic, a first compensation layer having a third thermal response characteristic and a third mechanical stress characteristic, and a second compensation layer having a fourth thermal response characteristic and a fourth mechanical stress response characteristic. The first and second compensation layers are arranged to compensate a thermal effect produced by the different first and second thermal response characteristics of the mechanical structure and the at least one layer of the actuating structure such that movement of the movable structure is substantially independent of variations in temperature and to adjust a stress effect produced by the different first and second stress response characteristics of the mechanical structure and the at least one layer of the actuating structure such that the movable structure is deflected a predetermined amount relative to the substrate when the electromechanical transducer device is in an inactive state.
Abstract:
A MEMS capacitive device (90) includes a fixed capacitor plate (104) formed on a surface (102) of a substrate (100). A movable capacitor plate (114) is suspended above the fixed capacitor plate (104) by compliant members (116) anchored to the surface (102). A movable element (120) is positioned in spaced apart relationship from the movable capacitor plate (104) and has an actuator (130) formed thereon. Actuation of the actuator (130) causes abutment of a portion of the movable element (120) against a contact surface (136) of the movable plate (114). The abutment moves the movable plate (114) toward the fixed plate (104) to alter a capacitance (112) between the plates (104, 114). Another substrate (118) may be coupled to the substrate (100) such that a surface (126) of the substrate (118) faces the surface (102) of the substrate (100). The movable element (120) may be formed on the surface (126).
Abstract:
A balanced-unbalanced (balun) signal transformer includes an unbalanced port, a balanced port coupled to the unbalanced port, the balanced port comprising a first terminal and a second terminal, a first capacitor coupled to the first terminal, a first inductor coupled to ground and the first capacitor, a second capacitor coupled to the second terminal, and a second inductor coupled to ground and the second capacitor. The transformer may also include a third capacitor coupled to a terminal of the unbalanced port; and a third inductor coupled to the third capacitor and the third terminal.
Abstract:
A microelectromechanical systems (MEMS) component 20 includes a portion 32 of a MEMS structure 30 formed on a semiconductor substrate 34 and a portion 36 of the structure 30 formed in a non-semiconductor substrate 22. The non-semiconductor substrate 22 is in fixed communication with the semiconductor substrate 34 with the portion 32 of the MEMS structure 30 being interposed between the substrates 34 and 22. A fabrication method 96 entails utilizing semiconductor thin-film processing techniques to form the portion 32 on the semiconductor substrate 34, and utilizing a lower cost processing technique to fabricate the portion 36 in the non-semiconductor substrate 22. The portions 32 and 36 are coupled to yield the MEMS structure 30, and the MEMS structure 30 can be attached to another substrate as needed for additional functionality.
Abstract:
An integrated passive device (20) includes a first wafer (22), a first integrated device (28) formed on a first surface (24) of the wafer (22), and a second integrated device (30) formed on a second surface (26) of the wafer (22), the second surface (26) opposing the first surface (24). A microelectromechanical (MEMS) device (72) includes a second wafer (74) having a MEMS component (76) formed thereon. The integrated passive device (20) and theMEMS device (72) are coupled to form an IPD/MEMS stacked device (70) in accordance with a fabrication process (90). The fabrication process (90) calls for forming (94) the second integrated device (30) on the second surface (26) of the wafer (22), constructing (100) the MEMS component (76) on the wafer (74), coupling (104) the wafers (22, 74), then creating the first integrated device (28) on the first surface (24) of the first wafer (22).
Abstract:
A power amplifier (PA) line-up (210) and a method (500) for more efficiently utilizing battery power are disclosed. PA line-up (210) includes a driver (220), a matching circuit (214), and a PA (230) coupled to a matching circuit (216), wherein matching circuit (216) is configured to be coupled to a filter (260). PA line-up (210) includes a transmission line (260) coupled to matching circuit (216) and a switch (262) configured to selectively couple driver (220) to either matching circuit (214) or matching circuit (216) such that signal (205) is capable of by-passing PA (230) when signal (205) does not need to be amplified by PA (230). Furthermore, PA line-up (210) may include a second transmission line (250) so that signal (205) is capable of by-passing a driver (220) and a PA (230) when signal (205) does not need to be amplified by driver (220) and PA (230).
Abstract:
A self-poling piezoelectric based MEMS device is configured for piezoelectric actuation in response to application of a device operating voltage. The MEMS device comprises a beam, a first electrode disposed on the beam, a layer of piezoelectric material having a self-poling thickness disposed overlying a portion of the first electrode, and a second electrode overlying the layer of piezoelectric material. The layer of piezoelectric material is self-poled in response to application of the device operating voltage across the first and second electrodes. In addition, the self-poled piezoelectric material has a poling direction established according to a polarity orientation of the device operating voltage as applied across the first and second electrodes.
Abstract:
A circuit includes a micro electro mechanical switch and a detection circuit. The micro electro mechanical switch has a movable portion positioned to form an electrical connection between a first electrical contact and a second electrical contact in response to an electrostatic force provided by a top activation electrode and a bottom activation electrode. The detection circuit is electrically coupled to the top and bottom activation electrodes and is for detecting a first capacitance value between the top and bottom activation electrodes when the movable portion is in a first position and for detecting a second capacitance value when the movable portion is in a second position. By detecting a change in the capacitance, it can be determined if the switch is open or closed.