公开(公告)号：JPH01177540A

公开(公告)日：1989-07-13

申请号：JP162388

申请日：1988-01-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/00 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To provide the higher sensitivity than in the case of using respective developing soln. alone by mixing >=2 kinds of the developing solns. and developing a resist by such developing soln. mixture. CONSTITUTION:The resist is developed by using the soln. mixture composed of a 1st org. soln. and 2nd org. soln. of respectively satisfying delta1 12.5 where the solubility parameters of the 1st org. soln. and the 2nd soln. are designated and delta1, delta2 in the case of developing the resist consisting of a high polymer of the solubility parameter deltaR. For example, polymethyl methacrylate (PMMA) having 11.3 solubility parameter deltaR is used as the resist, methyl isobutyl ketone (MIBK) having 8.57 solubility parameter delta1 is used as the 1st org. solvent and methyl alcohol (MeOH) having 14.28 solubility parameter delta2 is used as the 2nd org. soln. The higher sensitivity is thereby obtd. in the case of developing the resist by using >=2 kinds of the developing solns. in combination than in the case of using the respective developing solns. alone.

公开(公告)号：JPH06342207A

公开(公告)日：1994-12-13

申请号：JP13042693

申请日：1993-06-01

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  SUGIURA EMIKO ,  NAKAJIMA MASATOSHI

IPC: G01B11/24 ,  G03F1/36 ,  G03F1/84 ,  G06T1/00 ,  G06T7/00 ,  G06T7/60 ,  H01L21/027 ,  G03F1/08 ,  G06F15/62 ,  G06F15/70

Abstract: PURPOSE:To accurately inspect a mask for light exposing having a shape different from design data by receiving the influence of a proximity effect by processing the design data so as to suppress the generation of pseudo defects, thereby forming data for inspection. CONSTITUTION:The data for inspection deforming the data for inspection (dotted line) form the original design data (broken line) is formed only for the point (part within a circle A) where most of the pseudo defects (the parts, such as roundness of the square parts of mask patterns, which are not intrinsic defects, and are recognized erroneously as defect at the time of inspection) are generated in the case of inspection of the mask for light exposing having the fine mask patterns by using a defect inspecting device of a system for comparing and inspecting the design data and the mask patterns. The data for inspection formed in such a manner and the actually formed mask patterns are comparatively inspected. As a result, the mask for light exposing having the shape different from the design data by receiving the influence of the proximity effect in such a case of isolated existence of the fine patterns is correctly inspected.

公开(公告)号：JPH0527441A

公开(公告)日：1993-02-05

申请号：JP12777691

申请日：1991-05-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/26 ,  G03F1/68 ,  G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027

Abstract: PURPOSE:To provide a photo-or radiation-sensitive compsn. having enough sensitivity for light and suitable for lithography using short wavelength light such as far UV ray. CONSTITUTION:The polymer or oligomer as the main component has a siloxane structure (-Si-O-) as the skeleton of the chemical compsn. This polymer has an end group or side chain group which polymerizes by condensation with an anion or cation seed produced by light or radiation. Thereby, this photo-or radiation-sensitive compsn. becomes insoluble with a solvent after irradiation of light or radiation. In this process, not only an org. solvent is used as a developer but it can be developed with an alkali aq. soln. by providing polarity to the end group. The light or irradiation means visible light, UV ray, far UV ray, vacuum UV ray, X ray, gamma ray, electron beam, ion beam, etc.

公开(公告)号：JPH03274551A

公开(公告)日：1991-12-05

申请号：JP7607690

申请日：1990-03-26

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/29 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027

Abstract: PURPOSE:To allow the stable and accurate transfer of fine patterns approximate to the resolution threshold by forming a chromium film and a PMMA film on a quartz substrate and forming PMMA film patterns, then partially removing the chromium film by the prescribed amt. from the end of the PMMA film patterns down to the inside. CONSTITUTION:The chromium film 5 is deposited by a vaccum vapor deposition method on the quartz substrate 1 and the polymethyl methacrylate PMMA 6 is applied thereon and is subjected to a heat treatment. After the prescribed patterns are subjected to exposing with an electron beam, the patterns PMMA is subjected to spray development by using a developing soln. mixture composed of methyl isobutyl ketone and isopropyl alcohol to form the resist patterns of the PMMA 6. The chromium film 5 is subjected to wet etching by a cerium nitrate ammon soln. with the resist patterns of the PMMA 6 as a mask, by which the chromium film is removed by the prescribed amt. down to the inside from the resist pattern end. The stable and accurate transfer of the fine patterns approximate to the resolution limit is executed in this way.

公开(公告)号：JPH0229654A

公开(公告)日：1990-01-31

申请号：JP17957088

申请日：1988-07-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/11 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent the electrification of resist films and mixing of the films of the layers by forming the resist films having the multilayered structure, any one layer of which is made of a high-polymer film consisting of the salt of the anion group of polystyrene sulfonic acid and a group having positive electric charge and polyvinyl alcohol (PVA) on a substrate. CONSTITUTION:The high-polymer film consisting of the salt of the anion group of the polystyrene sulfonic acid and the group having the positive group, for example, the high-polymer film 5 mixed with ammonium polystyrene sulfonate and PVA is coated on the surface of the Si substrate and is then subjected to a heat treatment. The surface thereof is then coated with a coated oxide film 3 and is further subjected to the heat treatment. Finally, the surface is coated with polymethyl methacrylate (PMMA) film 4 and is subjected to the heat treatment to form the 3-layered resist films. The resist films having the multilayered structure are subjected to an electron beam exposing treatment, by which the resist patterns are formed. Since the conductive high-polymer film is used, the electrification of the lower layer resist is prevented and the mixing of this conductive electron high-polymer film and the other coated films is prevented.

公开(公告)号：JPH0229653A

公开(公告)日：1990-01-31

申请号：JP17956988

申请日：1988-07-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/11 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To prevent the electrification of a lower layer resist film without using a thin silicon (Si) film by forming resist films having a multilayered structure consisting of thin high-polymer films including a quaternary ammonium salt structure in a part of the main chain or side chain on a substrate, then subjecting the films to an electron beam exposing treatment. CONSTITUTION:The thin high-polymer film 2 contg. the quaternary ammonium salt structure in a part of the main chain or side chain, for example, the thin film of polyvinyl chloride benzyltrimethyl ammonium salt is coated on the surface of an Si substrate 2 and is then subjected to a heat treatment. The Si resist layer 3, for example, a chloromethylated polydiphenyl siloxane layer is coated thereon and is further subjected to a heat treatment, by which the resist films having the two-layered structure are formed. The resist patterns are formed by subjecting the resist films having the multilayered structure to the electron beam exposing treatment. The thin conductive high-polymer films is used for any one layer of the resist films having the multilayered structure is used and, therefore, the electrification of the lower layer resist is prevented without using the thin Si film.

公开(公告)号：JPH01185545A

公开(公告)日：1989-07-25

申请号：JP809988

申请日：1988-01-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/26 ,  G03C1/00 ,  G03C5/00 ,  G03C5/16 ,  G03F7/00 ,  G03F7/09 ,  G03F7/095 ,  G03F7/11 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To reduce the time necessary for exposing a resist film with electron beams by laminating a positive type electron beam resist film and ammonium polystyrene sulfonate on a semiconductor substrate in this order, and exposing the laminate with the electron beams, followed by developing the exposed laminate with a developing agent for an aqueous or a novolak type photoresist. CONSTITUTION:A polymethyl methacrylate (PMMA) film 8 and an ammonium polystyrene sulfonate (AmSS) film 9 are laminated on the semiconductor substrate in this order. Next, the laminate is exposed with the electron beams 3 having a prescribed shape, and then developed with the developer for the aqueous or the novolak type photoresist to form a pattern composed of the AmSS film 9. And then, the pattern is exposed wholly with far UV rays 10, followed by developing the exposed pattern with the developer for a positive type electron beam resist to form the pattern composed of the PMMA film 8. Thus, the approach effect correction of the pattern due to the GHOST method is realized by exposing it with the electron beam at a time, without using a metal film.

公开(公告)号：JPH01177539A

公开(公告)日：1989-07-13

申请号：JP162288

申请日：1988-01-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/00 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To improve the sensitive of a resist and to improve the stability of development by developing the resist after exposing by using an org. solvent contg. water within the range of >=0.01 weight ratio and compatibility limit or below. CONSTITUTION:After polymethyl methacrylate (PMMA) is coated on an Si substrate to 0.5mum thickness, the coating is subjected to a heat treatment for 30min at 170 deg.C then to exposing with an electron beam at 28kV acceleration voltage, following which the coating is subjected to dip development for 1min at 23 deg.C by using a developing soln. formed by mixing 10g H2O in 500g methyl isobutyl ketone (MIBK). This developing method develops the resist after exposing by using the org. solvent contg. the water of >=0.01% weight ratio and the compatibility limit or below. The sensitivity of the resist is thereby improved and the finer pattern is formed.

公开(公告)号：JPH01157521A

公开(公告)日：1989-06-20

申请号：JP31594487

申请日：1987-12-14

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/78

Abstract: PURPOSE:To prevent a pattern from being destroyed and a device from being deteriorated in a simple process without modifying an apparatus by a method wherein at least one part on a semiconductor substrate is covered with a polystyrene ammonium sulfonate thin film, this film is grounded and ions are then implanted. CONSTITUTION:After an oxide film 4 has been formed on the surface of a P-type silicon substrate 1, a gate oxide film 2 is formed. After that, a polysilicone gate 3 is formed selectively; a resist film 6 is coated; after that, a resist pattern having an opening is formed in a device formation region. After that, a polystyrene ammonium sulfonate (AmSS) film 5 is formed on a whole face. One part of the AmSS film 5 is grounded. Then, a photoresist is coated and is prebaked; after that, it is exposed to light in a prescribed shape; a developing operation is executed; a resist pattern is formed. Then, an aqueous solution of the AmSS is spin-coated; a prescribed heat treatment is executed; the AmSS film 5 of a prescribed thickness is formed. After that, ions of phosphorus are implanted in order to form a source region 7 and a drain region 8. Because one part of the AmSS is grounded, the electrified positive ions are discharged through the conductive AmSS film; a problem such as a charging-up phenomenon or the like is not caused.

公开(公告)号：JPS6435549A

公开(公告)日：1989-02-06

申请号：JP19296587

申请日：1987-07-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/38 ,  G03C5/00 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To bring out the best characteristics of a resist and to ensure both high sensitivity and low resistivity especially for AmSS by subjecting a resist film to heat treatment at a prescribed temp., exposure in a prescribed shape, heat treatment at a temp. above the former heat treatment temp. and development. CONSTITUTION:A film 2 of ammonium polystyrenesulfonate (AmSS) as an electrically conductive negative type resist is formed on a quartz substrate 1, heat treated in N2 with a clean oven and exposed with electron beams 3 having a prescribed pattern. The film 2 is then heat treated at a temp. above the former heat treatment temp. and developed with water as a developer to form a pattern 4. The best characteristics of the resist can be brought out and both high sensitivity and low resistivity can be ensured especially for AmSS.