公开(公告)号：JP2004014943A

公开(公告)日：2004-01-15

申请号：JP2002168945

申请日：2002-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  YABUKI YOSHIBUMI ,  ANZAI SHINICHI ,  HINO TOMOKIMI ,  GOTO OSAMU ,  FUJIMOTO TSUTOMU ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser employing a nitride III-V group compound semiconductor, which is driven independently and whose operation before mounting is readily confirmed. SOLUTION: In the multibeam semiconductor laser, having a nitride III-V group compound semiconductor layer, forming a laser structure on one main surface of a substrate 1, and anode electrodes 23, 24 as well as cathode electrodes 20, 21 formed on the same layer, the anode electrode 23 is formed so as to be laid across the cathode electrode 20 through an insulation film 22 while the anode electrode 24 is formed so as to be laid across the cathode electrode 21 through the insulation film 22. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003124572A

公开(公告)日：2003-04-25

申请号：JP2001315703

申请日：2001-10-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASAZUMA YASUNORI ,  TOMITANI SHIGETAKA ,  TAMAMURA KOJI ,  TOJO TAKESHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor light emitting element having good emission characteristics and a long lifetime, a highly reliable semiconductor element having good characteristics and a long lifetime. SOLUTION: At the time of fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconductor layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate 1 where a plurality of second regions B having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region A of crystal having the first mean dislocation density, an element region 2 is defined on the nitride based III-V compound semiconductor substrate such that the second region B is not included substantially or the second region B is not included in the emission region 2 or the active region.

公开(公告)号：JP2003086903A

公开(公告)日：2003-03-20

申请号：JP2001271948

申请日：2001-09-07

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  GOTO OSAMU ,  IKEDA MASAO

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To realize a semiconductor light emitting device which restrains electrons from overflowing without impeding an injection of holes into an active layer, is markedly reduced in a drive current and a voltage, and formed of nitride III-V compound semiconductor. SOLUTION: A semiconductor light emitting device is formed of nitride III-V compound semiconductor and has a structure in which an active layer is interposed between an N-type clad layer 5 and a P-type clad layer 10. At least, a cap layer 8 which is of super lattice and composed of barrier layers formed of first nitride III-V compound semiconductor containing Al and Ga and each having a first thickness and well layers formed of second nitride III-V compound semiconductor containing Ga and each having a second thickness that are alternately laminated is provided between the active layer 7 and the P-type clad layer 10.

公开(公告)号：JP2003017421A

公开(公告)日：2003-01-17

申请号：JP2002051583

申请日：2002-02-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: C30B29/38 ,  H01L21/205 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor, having a large low-defect region on the surface and a semiconductor element using the same, and also to provide a method of manufacturing the nitride semiconductor which enables easy reduction of surface defects in a layer formation process using lateral growth technology, and to provide a method of manufacturing the semiconductor element using the nitride semiconductor. SOLUTION: On a substrate 100, a seed crystal section 105 is formed into a stripe geometry via a buffer layer 100a, and next, a crystal is grown from the seed crystal section 105 in two-stage growing conditions, to form a nitride semiconductor layer 107. In the first stage, a low-temperature growth section 107a, whose cross-sectional shape in the thickness direction is trapezoidal, is formed at a growing temperature of 1,030 deg.C, and in the second stage; a lateral growth is made to progress dominantly at a growing temperature of 1,070 deg.C, to form a high-temperature growth section 107b between the low-temperature growth sections 107a; consequently, on the surface of the nitride semiconductor layer 107, hillocks and normal lattice defects are reduced in sections which are higher than the low-temperature growth sections 107a.

Abstract translation: 要解决的问题：为了提供在表面上具有大的低缺陷区域的氮化物半导体和使用其的半导体元件，并且还提供一种制造氮化物半导体的方法，其能够容易地减少层中的表面缺陷 并且提供使用氮化物半导体制造半导体元件的方法。 解决方案：在基板100上，通过缓冲层100a将晶种部分105形成条纹几何形状，接着在两阶段生长条件下从籽晶部分105生长晶体，以形成氮化物半导体层 在第一阶段中，在1020℃的生长温度和第二阶段中形成厚度方向的横截面形状为梯形的低温生长部分107a; 在1070摄氏度的生长温度下横向生长主要进行，以在低温生长部分107a之间形成高温生长部分107b; 因此，在氮化物半导体层107的表面上，高于低温生长部分107a的部分中的小丘和正常的晶格缺陷减小。

公开(公告)号：JP2003008143A

公开(公告)日：2003-01-10

申请号：JP2001183368

申请日：2001-06-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HINO TOMOKIMI ,  GOTO OSAMU ,  YABUKI YOSHIBUMI ,  ANZAI SHINICHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a multi-beam semiconductor laser device which outputs beams uniform in optical output and is suitably constituted so as to output large high optical power.
SOLUTION: This multi-beam semiconductor laser device is a GaN semiconductor laser device having an SCH structure, where laser stripes 44 are provided on a common sapphire board 42, and laser beams are projected from the stripe projection end faces 44a of the laser stripes provided to a cleavage plane vertical to the laser stripes 44. The laser stripes 44 are each of an air ridge type which is current-constricted by an SiO
2 film, a P-side electrode 46 is provided on each ridge, and the laser stripes 44 are formed on a common mesa 45 provided on the sapphire board 42. An N-side electrode 48 is exposed behind the common mesa 45 as a common counter electrode to the P-side electrodes 46, and provided on a contact layer 50 which extends from the rear end face of the laser stripes 44 in the direction of the laser stripes.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供在光输出中输出光束均匀的多光束半导体激光装置，其适当构成为输出大的高光功率。 解决方案：该多光束半导体激光器件是具有SCH结构的GaN半导体激光器件，其中激光条44设置在公共蓝宝石板42上，并且激光束从设置的激光条的条形突起端面44a突出 到与激光条纹44垂直的解理面。激光条44各自是由SiO 2膜电流收缩的空气脊型，在每个脊上设置P侧电极46，激光条44 形成在设置在蓝宝石板42上的公共台面45上.N侧电极48作为公共对置电极露出在共用台面45的后面，与P侧电极46接触，设置在接触层50上， 在激光条纹的方向上的激光条纹44的后端面。

公开(公告)号：JP2001267691A

公开(公告)日：2001-09-28

申请号：JP2000404035

申请日：2000-12-08

Applicant: SONY CORP

Inventor： SHIBUYA KATSUYOSHI ,  ASANO TAKEHARU ,  KIJIMA SATORU ,  YANASHIMA KATSUNORI ,  TAKEYA MOTONOBU ,  IKEDA MASAO ,  HINO TOMOKIMI ,  YAMAGUCHI KYOJI ,  IKEDA MASAAKI ,  GOTO OSAMU

IPC: C23C16/34 ,  H01L21/205 ,  H01L21/86 ,  H01L27/12 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element and its manufacturing method for improving crystallization of nitride-based III-V group compound semiconductor on a sapphire substrate. SOLUTION: After a seed crystal layer 12 with a crystal part 12A made of nitride-based III-V group compound semiconductor crystal and an opening 12B is formed on a sapphire substrate, a recess 11B continuously joined to the opening 12B is formed in the sapphire substrate. An n-side contact layer 15 is grown from the crystal part 12A. As a result, a crystal grown sidewise from the crystal part 12A is prevented from being in contact with the sapphire substrate 11, and the n-side contact layer 15 and the nitride-based III-V group compound semiconductor crystal have a low density of through dislocation while a fluctuation in crystal orientation is made small.

公开(公告)号：JP2013175790A

公开(公告)日：2013-09-05

申请号：JP2013119695

申请日：2013-06-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  SUZUKI YASUHIKO ,  SHIBUYA KATSUYOSHI ,  MIZUNO TAKASHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/343 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element which uses a nitride-based III-V compound semiconductor and which can achieve good crystallinity of an optical waveguide layer thereby to achieve a long service life.SOLUTION: In manufacturing of a semiconductor laser by sequentially growing an n-type AlGaN clad layer 5, an n-type GaN optical waveguide layer 6, an active layer 7, an undoped GaN optical waveguide layer 17, a p-type AlGaN cap layer 9, a p-type GaN optical waveguide layer 10, a p-type AlGaN/GaN superlattice clad layer 18 and a p-type GaN contact layer, the n-type GaN optical waveguide layer 6, the active layer 7, the undoped GaN optical waveguide layer 17, and the p-type AlGaN cap layer 9 are grown in an Natmosphere, and the p-type GaN optical waveguide layer 10, the p-type AlGaN/GaN superlattice clad layer 18 and the p-type GaN contact layer are grown in a mixed gas atmosphere of Nand H.

Abstract translation: 要解决的问题：提供一种使用氮化物III-V族化合物半导体的半导体发光元件的制造方法，其能够实现光波导层的良好的结晶性，从而达到较长的使用寿命。 通过依次生长n型AlGaN包覆层5，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层17，p型AlGaN覆盖层9， p型GaN光波导层10，p型AlGaN / GaN超晶格覆盖层18和p型GaN接触层，n型GaN光波导层6，有源层7，未掺杂的GaN光波导层 17，并且p型AlGaN覆盖层9在大气中生长，并且p型GaN光波导层10，p型AlGaN / GaN超晶格覆盖层18和p型GaN接触层生长在 Nand H的混合气体气氛

公开(公告)号：JP2013098487A

公开(公告)日：2013-05-20

申请号：JP2011242461

申请日：2011-11-04

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  MURAKAMI YOSUKE

IPC: H01L51/40 ,  H01L21/336 ,  H01L21/368 ,  H01L29/786 ,  H01L51/05

CPC classification number: H01L51/0096 ,  H01L27/283 ,  H01L51/0003 ,  H01L51/0558

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic semiconductor device with which an organic semiconductor device having an excellent organic semiconductor device single crystal membrane/insulating film interface can be manufactured.SOLUTION: A substrate is formed which includes, on one principal surface, a growth control region having a lyophilic surface Sand at least one core formation control region provided on one side of the growth control region while being connected with the growth control region. An unsaturated organic solution resulting from dissolving an organic semiconductor and an organic insulator in a solvent is supplied to the growth control region and the core formation control region of the substrate. The organic insulator in the organic solution is sunk in one principal surface of the substrate, thereby forming a gate insulating film comprised of the organic insulator. Continuously, the solvent of the organic solution is evaporated, thereby growing an organic semiconductor single crystal membrane comprised of the organic semiconductor on the gate insulating film. A source electrode and a drain electrode are formed on the organic semiconductor single crystal membrane.

Abstract translation: 要解决的问题：提供可以制造具有优异的有机半导体器件单晶膜/绝缘膜界面的有机半导体器件的有机半导体器件的制造方法。 解决方案：形成基底，其在一个主表面上包括具有亲液表面S 1 的生长控制区域和至少一个提供在一个上的核心形成控制区域 同时与生长控制区域连接。 将有机半导体和有机绝缘体溶解在溶剂中得到的不饱和有机溶液供给到基板的生长控制区域和芯形成控制区域。 有机溶液中的有机绝缘体沉积在基板的一个主表面上，从而形成由有机绝缘体构成的栅极绝缘膜。 连续地蒸发有机溶液的溶剂，从而在栅极绝缘膜上生长由有机半导体构成的有机半导体单晶膜。 源电极和漏电极形成在有机半导体单晶膜上。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2004262757A

公开(公告)日：2004-09-24

申请号：JP2004141170

申请日：2004-05-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  YANASHIMA KATSUNORI ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI ,  SUZUKI YASUHIKO

IPC: C30B29/40 ,  C30B25/04 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element having a wide low-defect region on the surface and to provide a method for producing a semiconductor element which can easily reduce surface defects in a layer formation step using a lateral growth technique. SOLUTION: A seed crystal layer 201 is grown on a substrate 100, and a growth inhibition layer 216 is formed on the layer 201. That part of the layer 201 which is exposed through the opening of the layer 201 serves as a seed crystal part 215. GaN:Si is grown on the part 215 as a base to form the second seed crystal part 217a. The growth temperature is 1,000°C at the highest. A high-temperature growth part 217b is grown on the part 217a as a base. The growth temperature is 1,050°C at the lowest. The crystal growth proceeds chiefly in the lateral direction to form a continuous unitary layer. Almost no dislocation or crystal defect exists just above the part 217a, and therefore a wide low-defect region is formed on the surface of a nitride semiconductor layer 217. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003063897A

公开(公告)日：2003-03-05

申请号：JP2001257606

申请日：2001-08-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SUZUKI YASUHIKO ,  ASANO TAKEHARU ,  TAKEYA MOTONOBU ,  GOTO OSAMU ,  IKEDA MASAAKI ,  SHIBUYA KATSUYOSHI

IPC: C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

CPC classification number: C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

Abstract: PROBLEM TO BE SOLVED: To suppress the amount of the warping of a substrate below 70 μm when forming the semiconductor layer of a nitride-based III-V group compound on a substrate formed of a substance different from the nitride-based III-group compound. SOLUTION: When the semiconductor layer formed of a nitride-based III-V group compound such as GaN is grown on the substrate such as a sapphire substrate, the thickness x of the substrate is selected so as to satisfy 0 =450 μm with respect to the thickness y of the semiconductor layer of the nitride-based III-V group compound. Under the conditions of the maximum dimension D (cm) of the substrate, the amount of warping of 0 (cm), and z=y/x, D is selected so as to satisfy 0 (1-HCZ), providing that C (cm ) is a proportional constant when the radius ρ (cm) of the curvature of the substrate is expressed to be 1/ρ=CZ.

Abstract translation: 要解决的问题：在由不同于氮化物III-族化合物的物质形成的基板上形成氮化物系III-V族化合物的半导体层时，为了抑制基板低于70μm的翘曲量 。 解决方案：当在诸如蓝宝石衬底的衬底上生长由诸如GaN的氮化物III-V族化合物形成的半导体层时，选择衬底的厚度x以满足0 =450μm。 在基板的最大尺寸D（cm）的条件下，选择0