公开(公告)号：JPS6360519A

公开(公告)日：1988-03-16

申请号：JP20440486

申请日：1986-08-30

Applicant: SONY CORP

Inventor： MORITA YASUSHI ,  NOGUCHI TAKASHI

IPC: H01L21/20 ,  H01L21/268

Abstract: PURPOSE:To obtain a large crystal grain size by forming a nonsingle crystal semiconductor layer by neutral ions on one main surface of a light transmission substrate, and heating by a light source a laminate made of the semiconductor layer and the substrate from the substrate side. CONSTITUTION:A polycrystalline silicon layer is formed by a low pressure CVD method on one main surface of a light transmission substrate 2, silicon ions as neutral ions are implanted to the silicon layer to obtain a amorphous silicon layer as a nonsingle crystal semiconductor layer 1. A laminate 3 of the substrate 2 and the layer 1 is irradiated with respective excimer laser beams (a) and (b) on the both surfaces to be annealed. Thus, a larger crystal grain size than that of the case of applying light beams from the semiconductor layer side can be obtained in the semiconductor layer, and the treating time can be shortened.

公开(公告)号：JPS6360518A

公开(公告)日：1988-03-16

申请号：JP20440386

申请日：1986-08-30

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  MORITA YASUSHI ,  HAYASHI HISAO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/324

Abstract: PURPOSE:To improve the flatness of a semiconductor layer of thin film by heat-treating a thin film semiconductor layer converted to be amorphous on a substrate before radiation annealing. CONSTITUTION:A semiconductor layer of thin film is formed on a substrate made of a silicon or quartz substrate or the like. Then, silicon ions are implanted, for example, as neutral ions to the layer. The layer is converted to be amorphous by the ion implantation. After the layer is converted, a heat treating is performed, for example, in an electric furnace as a preannealing before radiation annealing is done. A crystal growing method of the semiconductor layer can grow predetermined grains. Particularly, a crystal growth is alleviated by annealing by abruptly irradiating the light by heat treating to improve the flatness of the surface.

公开(公告)号：JPS63163A

公开(公告)日：1988-01-05

申请号：JP14395086

申请日：1986-06-19

Applicant: SONY CORP

Inventor： HAYASHI HISAO ,  KIYOTA HISAHARU ,  KOMATSU YUJI ,  MORITA YASUSHI

IPC: H01L21/3205 ,  H01L21/336 ,  H01L23/52 ,  H01L29/78

Abstract: PURPOSE:To obtain a gate electrode having low resistance by a method wherein an amorphous silicon layer is formed onto a gate insulating film on a semiconductor base body, a metallic layer or a metallic silicon compound layer is shaped onto the amorphous silicon layer, the amorphous silicon layer is thermally treated. a polycrystalline silicon layer is formed and the gate electrode is shaped. CONSTITUTION:An amorphous silicon layer 13 is formed onto a gate insulating film 2 shaped onto a semiconductor base body 3, and a metallic layer or a metallic silicon compound layer 5 is formed onto the amorphous silicon layer 13 in the same device. Consequently, a natural oxide film is not formed to an amorphous silicon layer surface 13A because the layer surface 13A is not brought into contact with the outside air. The amorphous silicon layer 13 is thermally treated to shape a polycrystalline silicon layer 14. Accordingly, no natural oxide film is formed on a contact surface with the metallic layer or the metallic silicon compound layer 5 of the polycrystalline silicon layer 14, thus acquiring a gate electrode 15 having low resistance.

公开(公告)号：JPS62257718A

公开(公告)日：1987-11-10

申请号：JP10162686

申请日：1986-04-30

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  TSUMORI TOSHIRO ,  TAKEDA MINORU ,  HAYASHI HISAO ,  MORITA YASUSHI

IPC: H01L21/20 ,  H01L21/263

Abstract: PURPOSE:To enable a solid phase epitaxial region to be formed at any position as required, by applying energy beams to a region having a smaller area than that of the solid phase epitaxial region while moving the energy beam applied region. CONSTITUTION:Insulation films 2, 2... are formed selectively on the surface of a wafer-type semiconductor substrate 1. A silicon semiconductor layer 4 is deposited over the whole surface of the substrate 1. A region 4a of the semiconductor layer 4 located on an exposed region 3 of the substrate 3, including its peripheral region, is heated by laser beams. Thereby, the solid phase epitaxy is started from the exposed region 3 of the substrate 1 and extended to the region 4a. The semiconductor layer 4 is then irradiated, in its broad region 4b including the irradiated region 4a and a peripheral region extending around it, with laser beams and heated thereby, During this process, the epitaxial region can be further extended from the region 4a to the region 4b. The position and configuration of the extended epitaxial region can be selected as required by controlling the region irradiated with laser beams.

公开(公告)号：JPS61122196A

公开(公告)日：1986-06-10

申请号：JP24191884

申请日：1984-11-16

Applicant: Sony Corp

Inventor： HAYASHI HISAO ,  MORITA YASUSHI ,  NODA SANENARI

IPC: C30B25/14 ,  C23C16/46

CPC classification number: C23C16/46

Abstract: PURPOSE:A gas-jetting means having a plurality of small nozzles are rotatably set so that it faces the surface on which wafers are placed to enable the layer to grow in a uniform thickness. CONSTITUTION:A couple of nozzles 6 is set as a means for jetting out the reaction gases in a vell jar 2. A plurality of small holes 7 are bored on the nozzles 6 in the whole parts opposing to the surface of the susceptor 3. The angle of the nozzles adjusted to the susceptors 3 and wafers 8 are heated through the base 1 and the susceptors 3 with the high-frequency induction coil 4. As the nozzles are allowed to rotate around the axis, the reaction gases are blown from the small holes 7. This mechanism enable the layer of high quality to grow in uniform thickness on the wafer 8.

Abstract translation: 目的：具有多个小喷嘴的气体喷射装置被可旋转地设置成使其面向放置晶片的表面，以使层能均匀地生长。 构成：将几个喷嘴6设置为用于喷射堰箱2中的反应气体的装置。多个小孔7在与基座3的表面相对的整个部分中的喷嘴6上钻孔。 通过基座1和基座3与高频感应线圈4一起加热调节到基座3和晶片8的喷嘴的角度。随着允许喷嘴绕轴旋转，反应气体从小 该机构使得高质量的层在晶片8上以均匀的厚度生长。

公开(公告)号：JP2001185505A

公开(公告)日：2001-07-06

申请号：JP36839799

申请日：1999-12-24

Applicant: SONY CORP

Inventor： MORITA YASUSHI

IPC: H01L21/768 ,  H01L21/28 ,  H01L21/336 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which realizes a removal of an etching stopper film stably with excellent controllability in a SAC process, and is superior in reproducibility and high in reliability. SOLUTION: When a contact hole CH is formed, a CF group polymer 25 formed in an upper layer of an etching stopper film 23 can be ashed with a gas using hydrogen to remove, and in particular, as it is possible to defend a progress of etching of the etching stopper film 23 with fluorine, it is possible to etch the etching stopper film stably and with superior controllability.

公开(公告)号：JPH0697133A

公开(公告)日：1994-04-08

申请号：JP8958391

申请日：1991-03-28

Applicant: SONY CORP

Inventor： GOCHO TETSUO ,  HAYAKAWA HIDEAKI ,  MORITA YASUSHI

IPC: H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76

Abstract: PURPOSE:To provide a method for planarizing a material having irregularities through polishing in which a recess is protected against unnecessary polishing when a protrusion is removed through polishing. CONSTITUTION:When a material 1 to be polished having a protrusion 2 and a recess 3, e.g. a substrate provided with irregularities when a film is formed on the entire surface in order to fill a groove 4 for example, is planarized by removing the protrusion 2 through polishing, an amount DELTA to be polished is previously stacked at the recess 3 during polishing operation of the protrusion 2 and then the recess 3 is polished.

公开(公告)号：JPH0653453A

公开(公告)日：1994-02-25

申请号：JP21977192

申请日：1992-07-27

Applicant: SONY CORP

Inventor： YAMAGISHI MACHIO ,  MORITA YASUSHI

IPC: H01L27/14

Abstract: PURPOSE:To realize an optoelectric converter, and fabrication thereof, in which accuracy is enhanced while suppressing smear level. CONSTITUTION:In an optoelectric converter where a light receiving part 1 receiving light and generating charges and a part 2 for transferring the charges to an output part are formed in parallel on a substrate 1 and a light shielding film 6 for preventing intrusion of light into the charge transfer part 2 is formed at least on the charge transfer part 2, a light absorbing film 7 is formed between the substrate 1 and the light shielding film 6 in order to absorb light impinging obliquely on the light absorbing film 7 from above the light receiving part 1 and reflected on the substrate thus inhibiting light from impinging on the charge transfer part.

公开(公告)号：JPH03244130A

公开(公告)日：1991-10-30

申请号：JP4184390

申请日：1990-02-22

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  MORITA YASUSHI

IPC: H01L21/3205 ,  H01L21/768 ,  H01L23/522

Abstract: PURPOSE:To form plugs for connecting to upper layer wirings by etchback of the surface of an interlayer insulating film after metal films are selectively grown in connection holes and by etchback after an insulating film is filled with metal films by bias ECRCVD to flatten the surface and then to make etchback. CONSTITUTION:Connection holes 3a, 3b are bored in an interlayer insulating films 2 which covers lower wirings 1a, 1b on a substrate, where W films 4a, 4b are grown from the seed of wirings 1a, 1b with SiH4+WF6 by CVD. At this time, impurities, etc., in a resist mask in formation of connection holes serve as the nucleus 5 to develop W foreign matters 6. The surface of the film and the foreign matter 6 are removed together by suitable etchback of the interlayer insulating film 2. The next step of etchback until exposure of the top of the W films 4a, 4b after an insulating film 7 is deposited over the interlayer insulating film 2 by bias ECRCVD to flatten the surface creates a state that W films 4a, 4b fill neither too much nor too little, thereby enhancing reliability of semiconductor devices.

公开(公告)号：JPH0355839A

公开(公告)日：1991-03-11

申请号：JP19187289

申请日：1989-07-25

Applicant: SONY CORP

Inventor： SATO JUNICHI ,  MORITA YASUSHI ,  WATANABE TETSUO

IPC: H01L21/205 ,  H01L21/31 ,  H01L21/316

Abstract: PURPOSE:To improve the thickness distribution of a thin film formed on a substrate, and form a thin film with uniformized thickness on the substrate, by a method wherein inert gas is jet against a light incidence window while the flow rate is changed, and the thin film is grown on the substrate by utilizing the photo chemical reaction of reaction gas. CONSTITUTION:A substrate 3 is arranged in a reaction chamber 1, and irradiated with light 7 through a light incidence window 5 of the reaction chamber 1. A thin film is grown on the substrate 3 by utilizing the photochemical reaction of reaction gas. In this thin film forming method, the inert gas is jetted against the light incidence window, while the flow rate is changed. For example, the reaction gas Si2H6/NH3 introduced into the reaction chamber 1 through a gas introducing part 8 is reacted by using the light energy of laser light 7, thus growing an SiNx film on a wafer 3. In this case, a gas introducing pipe 9 for jetting Ar gas is installed in the vicinity of the light incidence window 5, and the Ar gas is jetted against the light incidence window 5, while the flow rate is gradually changed by using a purging gas flow rate changing apparatus 11 like a mass flow controller.