公开(公告)号：US09331027B2

公开(公告)日：2016-05-03

申请号：US13959496

申请日：2013-08-05

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero

IPC: H01L23/34 ,  H01L23/00

CPC classification number: H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged.

Abstract translation: 集成电路包括设置在半导体主体的表面的有源电路和设置在半导体主体上方的互连区域。 热电材料设置在互连区域的远离半导体本体的上部。 热电材料被配置为当暴露于温度梯度时传递电能。 该材料可以用于例如在最初封装集成电路的重新包装检测方法之后。

公开(公告)号：US20160107886A1

公开(公告)日：2016-04-21

申请号：US14985083

申请日：2015-12-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Pascal Fornara ,  Antonio di-Giacomo ,  Brice Arrazat

IPC: B81C1/00 ,  H01H57/00

Abstract: Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

Abstract translation: 提供了形成和操作开关装置的方法。 开关装置形成在互连中，互连包括多个金属化层，并且具有包括由结构保持的梁的组件。 梁和结构位于相同的金属化水平内。 布置结构在梁上的固定位置，以便为梁定义位于这些固定位置之间的枢转点。 该结构在不存在电位差的情况下相对于光束和垂直于光束的平面基本对称。 在存在施加在结构的第一部分之间的第一电位差并且在存在施加在结构的第二部分之间的第二电位差的情况下在第二方向上枢转时，梁能够在第一方向上枢转。

公开(公告)号：US09269771B2

公开(公告)日：2016-02-23

申请号：US14627281

申请日：2015-02-20

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Guilhem Bouton ,  Pascal Fornara

IPC: H01L29/10 ,  H01L29/06 ,  H01L21/762 ,  H01L21/763 ,  H01L29/78

CPC classification number: H01L29/1083 ,  H01L21/76224 ,  H01L21/763 ,  H01L27/11293 ,  H01L29/0649 ,  H01L29/78 ,  H01L29/7846

Abstract: An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within an active region of the substrate limited by an insulating region. To address compressive stress in the active region, the circuit further includes at least one electrically inactive trench located at least in the insulating region and containing an internal area configured to reduce compressive stress in the active region. The internal area is filled with polysilicon. The polysilicon filled trench may further extend through the insulating region and into the substrate.

Abstract translation: 集成电路包括衬底和至少一个对压缩应力非常敏感的部件，其至少部分地布置在由绝缘区域限制的衬底的有源区域内。 为了解决有源区域中的压缩应力，电路还包括位于至少绝缘区域中的至少一个电惰性沟槽，并且包含被配置为减小有源区域中的压缩应力的内部区域。 内部填充多晶硅。 多晶硅填充沟槽可以进一步延伸穿过绝缘区域并进入衬底。

公开(公告)号：US20150346275A1

公开(公告)日：2015-12-03

申请号：US14824893

申请日：2015-08-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero

IPC: G01R31/28

CPC classification number: G01R31/2872 ,  G01L1/00 ,  G01L1/005 ,  G01L1/148 ,  G01L1/225 ,  G01L1/2293 ,  G01L11/00 ,  G01L25/00 ,  G01R31/2884 ,  H01L27/06 ,  H01L29/66007

Abstract: A method for manufacturing an integrated circuit includes forming in a substrate a measuring circuit sensitive to mechanical stresses and configured to supply a measurement signal representative of mechanical stresses exerted on the measuring circuit. The measuring circuit is positioned such that the measurement signal is also representative of mechanical stresses exerted on a functional circuit of the integrated circuit. A method of using the integrated circuit includes determining from the measurement signal the value of a parameter of the functional circuit predicted to mitigate an impact of the variation in mechanical stresses on the operation of the functional circuit, and supplying the functional circuit with the determined value of the parameter.

Abstract translation: 一种用于制造集成电路的方法包括在基板上形成对机械应力敏感的测量电路，并且被配置为提供表示施加在测量电路上的机械应力的测量信号。 测量电路被定位成使得测量信号也代表施加在集成电路的功能电路上的机械应力。 使用集成电路的方法包括从测量信号确定预测的功能电路的参数的值，以减轻机械应力的变化对功能电路的操作的影响，以及向功能电路提供确定的值 的参数。

公开(公告)号：US09121896B2

公开(公告)日：2015-09-01

申请号：US14082818

申请日：2013-11-18

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero

IPC: G01R27/08 ,  G01R31/28 ,  G01L9/00 ,  G06K19/073 ,  H01L21/66 ,  H01L23/00

CPC classification number: G01R31/2851 ,  G01L9/0042 ,  G06K19/07363 ,  G06K19/07381 ,  H01L22/34 ,  H01L23/576 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A device for detecting the thinning down of the substrate of an integrated circuit chip, including, in the active area of the substrate, bar-shaped diffused resistors connected as a Wheatstone bridge, wherein: first opposite resistors of the bridge are oriented along a first direction; the second opposite resistors of the bridge are oriented along a second direction; and the first and second directions are such that a thinning down of the substrate causes a variation of the imbalance value of the bridge.

Abstract translation: 一种用于检测集成电路芯片的基板的减薄的装置，包括在基板的有源区域中连接为惠斯通电桥的条形扩散电阻器，其中：桥的第一相对电阻器沿第一 方向; 桥的第二相对电阻器沿着第二方向定向; 并且第一和第二方向使得衬底的变薄导致桥的不平衡值的变化。

公开(公告)号：US20140138814A1

公开(公告)日：2014-05-22

申请号：US14049910

申请日：2013-10-09

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Abderrezak Marzaki ,  Yoann Goasduff ,  Virginie Bidal ,  Pascal Fornara

IPC: H01L23/482 ,  H01L21/48

CPC classification number: G01V7/04 ,  B81B3/001 ,  B81B2201/018 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0361 ,  B81B2203/04 ,  B81C1/00111 ,  H01H9/02 ,  H01H37/04 ,  H01H37/32 ,  H01H37/42 ,  H01H61/013 ,  H01L21/32139 ,  H01L28/82 ,  H01L28/88 ,  H01L29/4238

Abstract: A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.

Abstract translation: 公开了一种用于制造集成电路尖锐元件的方法。 元件具有突出部，其凹部朝向元件引导其凹面。 元件包括第一可蚀刻材料。 围绕元件的凹部形成区域。 该区域包括与用于特定蚀刻剂的第一材料不太可蚀刻的第二材料。 用特定的蚀刻剂蚀刻第一材料和第二材料，以在凹部中形成开放的凹坑，从而形成元件的尖锐区域。

公开(公告)号：US20140133517A1

公开(公告)日：2014-05-15

申请号：US14161502

申请日：2014-01-22

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christain Rivero

IPC: G01K13/00

CPC classification number: G01K13/00 ,  H01H1/0036 ,  H01H37/46 ,  H01H2037/008

Abstract: A device for monitoring the temperature surrounding a circuit, including: a charge storage element; a charge evacuation device; and a thermo-mechanical switch connecting the storage element to the evacuation element, the switch being capable of closing without the circuit being electrically powered, when the temperature exceeds a threshold.

Abstract translation: 一种用于监测电路周围温度的装置，包括：电荷存储元件; 充电撤离装置; 以及将所述存储元件连接到所述排气元件的热机械开关，当所述温度超过阈值时，所述开关能够关闭而不使所述电路被电力供电。

公开(公告)号：US20130229875A1

公开(公告)日：2013-09-05

申请号：US13786202

申请日：2013-03-05

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Francesco La Rosa ,  Olivier Pizzuto ,  Stephan Niel ,  Philippe Boivin ,  Pascal Fornara ,  Laurent Lopez ,  Arnaud Regnier

IPC: G11C16/26 ,  G11C16/14

CPC classification number: G11C16/26 ,  G11C8/12 ,  G11C11/5642 ,  G11C16/0433 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/14 ,  G11C16/24 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/42328 ,  H01L29/7881

Abstract: The disclosure relates to a method of reading and writing memory cells, each including a charge accumulation transistor in series with selection transistor, including applying a selection voltage to a gate of the selection transistor of the memory cell; applying a read voltage to a control gate of the charge accumulation transistor of the memory cell; applying the selection voltage to a gate of the selection transistor of a second memory cell coupled to the same bitline; and applying an inhibition voltage to a control gate of the charge accumulation transistor of the second memory cell, to maintain the transistor in a blocked state.

Abstract translation: 本公开涉及一种读取和写入存储单元的方法，每个存储单元包括与选择晶体管串联的电荷累积晶体管，包括将选择电压施加到存储器单元的选择晶体管的栅极; 将读取电压施加到存储单元的电荷累积晶体管的控制栅极; 将选择电压施加到耦合到相同位线的第二存储器单元的选择晶体管的栅极; 以及向第二存储单元的电荷累积晶体管的控制栅极施加抑制电压，以保持晶体管处于阻塞状态。

公开(公告)号：US20130146873A1

公开(公告)日：2013-06-13

申请号：US13687932

申请日：2012-11-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara ,  Christian Rivero ,  Antonio di-Giacomo

IPC: B81B3/00 ,  H01L23/58

CPC classification number: H01H37/52 ,  B81B3/0024 ,  G01K3/005 ,  G01K5/486 ,  H01L23/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations.

Abstract translation: 一种集成电路，包括用于电开关的机械装置，包括可热变形的第一组件，并且具有通过至少两个臂保持在至少两个不同位置处的梁，所述梁和所述臂是金属并且设置在相同的金属化水平内，以及 还包括至少一个导电体。 第一组件具有在第一温度下的第一构型和在与第一温度不同的第二温度下的第二构型。 在与另一种结构中的身体接触的一种结构中，光束与导电体脱离接触。 光束建立或断开通过所述至少一个导电体并通过所述光束的不同构造的电连接。

公开(公告)号：US11721647B2

公开(公告)日：2023-08-08

申请号：US17217005

申请日：2021-03-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Pascal Fornara

IPC: H01L23/62 ,  H01H85/02 ,  H01L23/525 ,  H01L21/66

CPC classification number: H01L23/62 ,  H01H85/0241 ,  H01L22/34 ,  H01L23/5256 ,  H01H2085/0283

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.