公开(公告)号：EP0697739B1

公开(公告)日：2001-10-31

申请号：EP94830393.8

申请日：1994-08-02

Applicant: STMicroelectronics S.r.l. ,  Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno

Inventor： Ferla, Giuseppe ,  Frisina, Ferruccio

IPC: H01L29/739

CPC classification number: H01L29/7395

公开(公告)号：EP0993053A1

公开(公告)日：2000-04-12

申请号：EP98830592.6

申请日：1998-10-09

Applicant: STMicroelectronics S.r.l.

Inventor： Polman, Albert ,  Hamelin, Nicholas ,  Kik, Peter ,  Coffa, Salvatore ,  Frisina, Ferruccio ,  Saggio, Mario

IPC: H01L31/108 ,  H01L31/0288 ,  G02B6/42

CPC classification number: G02B6/12004 ,  H01L31/0352 ,  H01L31/103

Abstract: The infrared detector device (1) comprises a PN junction (9, 10) formed by a first semiconductor material region (9) doped with rare earth ions and by a second semiconductor material region (10) of opposite doping type (P). The detector device comprises a waveguide (8) formed by a projecting structure (6) extending on a substrate (2) including a reflecting layer (4) and laterally delimited by a protection and containment oxide region (11). At least one portion of the waveguide (8) is formed by the PN junction and has an end fed with light to be detected. The detector device (1) has electrodes (18, 13) disposed laterally to and on the waveguide (8) to allow an efficient gathering of charge carriers generated by photoconversion.

Abstract translation: 红外线检测器装置（1）包括由第一半导体材料区域而形成的PN结（9，10）（9）掺杂有稀土离子和由相反的掺杂类型（P）的第二半导体材料区（10）。 该检测器装置包括一个波导（8）由形成突出结构（6）延伸的基板上（2）包括反射层（4）和晚期反弹由保护和容纳氧化物区（11）分隔。 在波导的至少一个部分（8）是由PN结形成并且具有端馈送有被检测光。 所述检测器装置（1）具有电极（18，13），其设置尾盘反弹并在波导（8），以允许在由光转换产生的载流子收集效率。

公开(公告)号：EP0993033A1

公开(公告)日：2000-04-12

申请号：EP98830585.0

申请日：1998-10-06

Applicant: STMicroelectronics S.r.l.

Inventor： Frisina, Ferruccio ,  Ferla, Giuseppe

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/7802 ,  G11C29/14 ,  G11C29/50 ,  G11C2029/0403 ,  H01L21/76202 ,  H01L21/8238 ,  H01L29/6656 ,  H01L29/66712

Abstract: Semiconductor power device comprising a semiconductor layer (1) of a first type of conductivity, wherein a body region (2) of a second type of conductivity comprising source regions (3) of the first type of conductivity is formed, a gate oxide layer (4) superimposed to the semiconductor layer (1) with an opening over the body region (2), polysilicon regions (5) superimposed to the gate oxide layer (4), and regions of a first insulating material (6) superimposed to the polysilicon regions (5). The device comprises regions of a second insulating material (10) situated on side of both the polysilicon regions (5) and the regions of a first insulating material (6) and over zones (14) of the gate oxide layer (4) situated near the opening on the body region (2), oxide regions (9) interposed between the polysilicon regions (5) and the regions of a second insulating material (10), oxide spacers (8) superimposed to the regions of a second insulating material (10).

Abstract translation: 半导体功率器件包括第一导电类型的半导体层（1），其中形成第一导电类型的源区（3）的第二导电类型的体区（2），栅极氧化层 4），叠加到所述体区（2）上的开口叠加到所述半导体层（1），叠加到所述栅极氧化物层（4）的多晶硅区域（5）和与所述多晶硅层叠叠的第一绝缘材料（6）的区域 地区（5）。 该器件包括位于两个多晶硅区域（5）和第一绝缘材料（6）的区域以及位于栅极氧化物层（4）附近的区域（14）的侧面上的第二绝缘材料（10）的区域 在体区域（2）上的开口，插入在多晶硅区域（5）和第二绝缘材料（10）的区域之间的氧化物区域（9），叠加到第二绝缘材料区域的氧化物间隔物（8） 10）。