公开(公告)号：US20220028872A1

公开(公告)日：2022-01-27

申请号：US17496299

申请日：2021-10-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO

IPC: H01L27/1159 ,  H01L29/78 ,  H01L29/66 ,  G11C11/22 ,  H01L21/28

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.

公开(公告)号：US20210359101A1

公开(公告)日：2021-11-18

申请号：US17244175

申请日：2021-04-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Taehwan MOON ,  Seunggeol NAM ,  Sanghyun JO

IPC: H01L29/51 ,  H01L27/11507 ,  H01L49/02 ,  H01L21/28 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film structure including ferroelectrics and anti-ferroelectrics and a semiconductor device including the same are provided. The thin film structure includes a first anti-ferroelectric layer comprising anti-ferroelectrics, a second anti-ferroelectric layer disposed apart from the first anti-ferroelectric layer and including anti-ferroelectrics, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric layer and including ferroelectrics.

公开(公告)号：US20210193811A1

公开(公告)日：2021-06-24

申请号：US16923514

申请日：2020-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Eunha LEE ,  Junghwa KIM ,  Hyangsook LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L49/02 ,  H01L27/108

Abstract: Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

公开(公告)号：US20210098595A1

公开(公告)日：2021-04-01

申请号：US16890231

申请日：2020-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yunseong LEE ,  Sangwook KIM ,  Sanghyun JO ,  Jinseong HEO ,  Hyangsook LEE

IPC: H01L29/51 ,  H01L29/78 ,  H01L21/02

Abstract: A ferroelectric thin-film structure includes at least one first atomic layer and at least one second atomic layer. The first atomic layer includes a first dielectric material that is based on an oxide, and the second atomic layer includes both the first dielectric material and a dopant that has a bandgap greater than a bandgap of the dielectric material.

公开(公告)号：US20200335335A1

公开(公告)日：2020-10-22

申请号：US16922330

申请日：2020-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Hyeonjin SHIN ,  Jaeho LEE ,  Sanghyun JO

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/778

Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.

公开(公告)号：US20200152808A1

公开(公告)日：2020-05-14

申请号：US16740900

申请日：2020-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC: H01L31/0216 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  G01N21/59

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20240266418A1

公开(公告)日：2024-08-08

申请号：US18635385

申请日：2024-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jinseong HEO ,  Hyangsook LEE ,  Sangwook KIM ,  Yunseong LEE

IPC: H01L29/51 ,  H01L21/02

CPC classification number: H01L29/517 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02356 ,  H01L28/40 ,  H01L29/516 ,  H01L29/513

Abstract: Disclosed herein is a thin film structure, including a first conductive layer on a dielectric layer including a plurality of layers. Each of the plurality of layers includes a dopant layer containing a dopant A and a HfO2layer to form a compound of HfxA1-xOz (0

公开(公告)号：US20240164115A1

公开(公告)日：2024-05-16

申请号：US18504760

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Minsu SEOL ,  Yunseong LEE ,  Dongmin KIM ,  Sanghyun JO ,  Dukhyun CHOE

IPC: H10B53/30 ,  H01L21/28 ,  H01L29/04 ,  H01L29/51

CPC classification number: H10B53/30 ,  H01L29/045 ,  H01L29/40111 ,  H01L29/516

Abstract: Provided are a semiconductor device including a ferroelectric and an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor layer, an electrode apart from the semiconductor layer, and a ferroelectric layer arranged between the semiconductor layer and the electrode. The ferroelectric layer includes a plurality of crystal grains, each of which having a first crystal orientation aligned within an angle range with respect to a first direction and having a second crystal orientation aligned within an angle range with respect to a second direction that is different from the first direction.

公开(公告)号：US20240113127A1

公开(公告)日：2024-04-04

申请号：US18529505

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO

IPC: H01L27/12 ,  G06N3/063 ,  G06N3/08

CPC classification number: H01L27/1207 ,  G06N3/063 ,  G06N3/08

Abstract: A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.

公开(公告)号：US20240072151A1

公开(公告)日：2024-02-29

申请号：US18502545

申请日：2023-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dukhyun CHOE ,  Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO

IPC: H01L29/51 ,  H01L29/78

CPC classification number: H01L29/516 ,  H01L29/78391

Abstract: Provided is a semiconductor device including a substrate on which a channel layer is provided, an insulation layer provided on the substrate, a ferroelectric layer provided on the insulation layer, a fixed charge region provided in the ferroelectric layer and containing charges of a predetermined polarity, and a gate provided on the ferroelectric layer. An absolute value of a charge density in the fixed charge region is greater than 0 and less than 5 μC/cm2.