公开(公告)号：US20170097466A1

公开(公告)日：2017-04-06

申请号：US15387592

申请日：2016-12-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: G02B6/10 ,  G02B1/04 ,  G02B6/34 ,  F21V8/00

CPC classification number: G02B6/10 ,  G02B1/045 ,  G02B6/00 ,  G02B6/0003 ,  G02B6/1221 ,  G02B6/34

Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.

公开(公告)号：US09595636B2

公开(公告)日：2017-03-14

申请号：US13852487

申请日：2013-03-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S Shatalov ,  Jianyu Deng ,  Alexander Dobrinsky ,  Xuhong Hu ,  Remigijus Gaska ,  Michael Shur

IPC: H01L33/20 ,  H01L33/22 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/22

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

Abstract translation: 提供了一种具有改进的光提取的发光器件。 可以通过在衬底的表面上外延生长发光结构来形成发光器件。 衬底可以被刻划以在衬底上形成一组成角度的侧表面。 对于所述一组倾斜的侧面中的每个成角度的侧表面，到所述一组成角度的侧表面中的每个成角度的侧表面的至少一部分的表面切向矢量形成大约十到八十度之间的角度，其中正常 底物表面的载体。 可以清洁基板以从成角度的侧面清洁碎屑。

公开(公告)号：US20170062657A1

公开(公告)日：2017-03-02

申请号：US15149782

申请日：2016-05-09

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  G06F17/50 ,  H01L33/20 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/22 ,  F21V5/002 ,  G06F17/5009 ,  G06F17/5045 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L2933/0058 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract translation: 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 该组粗糙度较大的部件可包括一系列截头形状。 成形表面还包括一​​组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

公开(公告)号：US09514947B2

公开(公告)日：2016-12-06

申请号：US14747150

申请日：2015-06-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Xuhong Hu ,  Michael Shur ,  Mikhail Gaevski

IPC: H01L29/43 ,  H01L29/45 ,  H01L21/283 ,  H01L31/0224 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01L23/482 ,  H01L23/00 ,  H01L33/62

CPC classification number: H01L21/283 ,  H01L21/28264 ,  H01L21/28575 ,  H01L23/482 ,  H01L24/03 ,  H01L24/05 ,  H01L29/43 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/4966 ,  H01L31/022425 ,  H01L33/40 ,  H01L33/405 ,  H01L33/62 ,  H01L2224/03848 ,  H01L2224/05019 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/051 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2924/10323 ,  H01L2924/1033 ,  H01L2924/10334 ,  H01L2924/10344 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2933/0016 ,  H01S5/0425 ,  H01S5/3013 ,  H01L2924/00

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract translation: 提供了与包括Cr，Ti和Al的连续层的半导体的接触，其可以导致与基于Ti / Al和Cr / Al的触点相关的一个或多个优点的接触。 例如，触点可以：降低接触电阻; 提供改进的表面形态; 提供更好的接触线性; 和/或要求较低的退火温度，与现有技术的Ti / Al基触点相比。

公开(公告)号：US20160322535A1

公开(公告)日：2016-11-03

申请号：US15212659

申请日：2016-07-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/12 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66 ,  H01L29/205 ,  H01L33/06 ,  H01L33/10 ,  H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L29/34

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/34 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

公开(公告)号：US09467105B2

公开(公告)日：2016-10-11

申请号：US14225761

申请日：2014-03-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Mikhail Gaevski ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H03F3/217 ,  H01L29/40 ,  H01L29/778 ,  H01L29/06 ,  H01L29/20

CPC classification number: H03F3/2171 ,  H01L29/0603 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66462 ,  H01L29/7787 ,  H03F3/2176

Abstract: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.

Abstract translation: 提供了包括到半导体通道的多个穿孔的装置。 该器件包括形成半导体沟道的半导体结构。 此外，器件包括源极接触，漏极接触和到半导体通道的栅极接触。 多个穿孔可以位于门接触下方的半导体结构中。 此外，多个穿孔中的穿孔可以延伸到半导体结构中超过半导体通道的位置。

公开(公告)号：US09425353B2

公开(公告)日：2016-08-23

申请号：US14504456

申请日：2014-10-02

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC: H01L33/36 ,  H01L33/12 ,  H01L33/42 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L33/32 ,  H01L33/14 ,  H01L33/00

CPC classification number: H01L33/12 ,  H01L33/007 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can be located between a semiconductor layer and another layer of material. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor layer. The layer of material can penetrate at least some of the plurality of pores and directly contact the semiconductor layer. In an illustrative embodiment, the layer of material is a conductive material and the anodic aluminum oxide is located at a p-type contact.

Abstract translation: 描述了包括阳极氧化铝层的半导体结构。 阳极氧化铝层可以位于半导体层和另一层材料之间。 阳极氧化铝层可以包括延伸到半导体层的相邻表面的多个孔。 材料层可以穿透多个孔中的至少一些并且直接接触半导体层。 在说明性实施例中，材料层是导电材料，阳极氧化铝位于p型接触处。

公开(公告)号：US20160240739A1

公开(公告)日：2016-08-18

申请号：US15138415

申请日：2016-04-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/22 ,  H01L33/06 ,  H01L33/12 ,  G06F17/50 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/16225

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。 基本平坦的顶表面中的一个或多个可以基于目标辐射进行图案化。

公开(公告)号：US09415126B2

公开(公告)日：2016-08-16

申请号：US14285869

申请日：2014-05-23

Applicant: Sensor Electronic Technology, Inc.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  C02F1/32 ,  G01N21/3504 ,  G01N21/03 ,  G01N21/33 ,  A61L2/26 ,  G01N21/31

CPC classification number: A61L2/10 ,  A61L2/26 ,  C02F1/325 ,  G01N21/0303 ,  G01N21/031 ,  G01N21/33 ,  G01N21/3504 ,  G01N2021/317

Abstract: A chamber configured to increase an intensity of target radiation emitted therein is provided. The chamber includes an enclosure at least partially formed by a set of transparent walls. Each transparent wall can comprise a first material transparent to the target radiation and having a refractive index greater than 1.1 for the target radiation. The outer surface of the set of transparent walls can include a set of cavities, each cavity comprising an approximately prismatic void. Additionally, a medium located adjacent to an outer surface of the set of transparent walls can have a refractive index within approximately one percent of a refractive index of a vacuum for the target radiation.

Abstract translation: 提供了一种被配置为增加其中发射的目标辐射的强度的室。 该室包括至少部分地由一组透明壁形成的外壳。 每个透明壁可以包括对靶辐射透明的第一材料，并且对于目标辐射具有大于1.1的折射率。 一组透明壁的外表面可以包括一组空腔，每个空腔包括近似棱柱形的空隙。 此外，位于该组透明壁的外表面附近的介质可以具有在靶辐射的真空的折射率的约百分之一内的折射率。

公开(公告)号：US09385271B2

公开(公告)日：2016-07-05

申请号：US14721082

申请日：2015-05-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Jinwei Yang

IPC: H01L33/06 ,  H01L33/32 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/15 ,  H01L33/00 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/778 ,  H01L33/0025 ,  H01L33/32

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.