公开(公告)号：JP2003289039A

公开(公告)日：2003-10-10

申请号：JP2003127127

申请日：2003-05-02

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： INOUE SOICHI ,  TOKAWA IWAO ,  OGAWA YOJI ,  HARA SHIGEHIRO ,  YAMAMOTO KAZUKO

IPC: H01L21/027

Abstract: PROBLEM TO BE SOLVED: To expose a specific region with high dimension precision, and to expose the other region with high position precision in accordance with the combination of a single shot and multiple exposure.
SOLUTION: In a pattern forming method for positioning electronic beams formed in arbitrary shapes, and for repeating shot exposure by performing irradiation in a prescribed time to form an exposure region with a desired pattern shape on a photosensitive material film on a substrate as a group of shots, a region A to which high dimension precision is requested is exposed by a single shot, and a region C to which high position precision is requested is repeatedly exposed by at least two times of shots.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：以高精度暴露特定区域，并且根据单次和多次曝光的组合，以高位置精度曝光另一区域。 解决方案：在用于定位任意形状的电子束的图案形成方法中，并且通过在规定时间内进行照射来重复拍摄曝光，以在基板上的感光材料膜上形成具有期望图案形状的曝光区域， 一组拍摄，要求高精度的区域A通过单次曝光曝光，并且要求高位置精度的区域C通过至少两次拍摄重复曝光。 版权所有（C）2004，JPO

公开(公告)号：JP2003287870A

公开(公告)日：2003-10-10

申请号：JP2002090010

申请日：2002-03-27

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SUTANI TAKUJI ,  DEWA KYOKO ,  FUJISAWA TADAHITO ,  INOUE SOICHI

IPC: G03F1/26 ,  G03F1/44 ,  G03F1/68 ,  G03F7/20 ,  G03F7/207 ,  G03F9/02 ,  H01L21/027 ,  G03F1/08

CPC classification number: G03F7/70641 ,  G03F1/44

Abstract: PROBLEM TO BE SOLVED: To highly sensitively and accurately monitor a deviation of focus position or a variation of the exposure of an exposure light source.
SOLUTION: The photomask is provided with a device pattern having an opening part and a mask pattern and a focus monitor pattern or an exposure monitor pattern which has the opening part and the mask pattern and has the same plane pattern shape with at least one part of region of the device pattern on a photomask. The phase difference of transmitted exposure light between the opening part and the mask part of the focus monitor pattern is different from the phase difference of the transmitted exposure light between the opening part and the mask part of the device pattern. Additionally, the opening part of the exposure monitor pattern has an exposure light transmittance different from that of the opening part of the device pattern.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：高度灵敏和准确地监测聚焦位置的偏差或曝光光源的曝光变化。 解决方案：光掩模设置有具有开口部分和掩模图案的装置图案，以及具有开口部分和掩模图案的具有至少具有相同平面图案形状的聚焦监视器图案或曝光监视器图案 在光掩模上的设备图案的一部分区域。 聚焦监视器图案的开口部分和掩模部分之间的透射曝光光的相位差与装置图案的开口部分和掩模部分之间的透射曝光光的相位差不同。 此外，曝光监视器图案的开口部分具有与装置图案的开口部分不同的曝光光透射率。 版权所有（C）2004，JPO

公开(公告)号：JP2003282663A

公开(公告)日：2003-10-03

申请号：JP2002087015

申请日：2002-03-26

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： ASANO MASASHI ,  KOMINE NOBUHIRO ,  INOUE SOICHI

IPC: G01B11/02 ,  G03F7/20 ,  G03F7/207 ,  G03F7/22 ,  G03F9/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F7/70633

Abstract: PROBLEM TO BE SOLVED: To provide a monitoring method capable of measuring a fine patterning size with high accuracy.
SOLUTION: The monitoring method comprises a step wherein a monitoring resist pattern 13 which includes a slanting side wall 20 with at least one side thereof provided slantingly with respect to the surface of the ground film 2, is formed on a ground film 2, and there is measured the width of the monitoring resist pattern 13 directed perpendicularly to a direction where the slanting side wall 20 intersects the ground film; a step wherein the ground film 2 is selectively etched using the monitoring resist pattern 13 as a mask to form a monitoring ground film pattern 12, and there is measured width of the monitoring ground film pattern 12 directed perpendicularly to a direction where the slanting side wall 20 intersects the ground film; and a step wherein a displacement width Δs is obtained on the basis of a difference between the width of the monitoring resist pattern 13 and the width of the ground film pattern 12.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供能够高精度地测量精细图案化尺寸的监视方法。 解决方案：监测方法包括以下步骤：其中监测抗蚀剂图案13包括相对于接地膜2的表面倾斜地设置有至少一个侧面的倾斜侧壁20，形成在接地膜2上 并且测量与倾斜侧壁20与接地膜相交的方向垂直地指示的监视抗蚀剂图案13的宽度; 使用监视抗蚀剂图案13作为掩模来选择性地蚀刻接地膜2以形成监测接地膜图案12的步骤，并且测量宽度的监视接地膜图案12垂直于倾斜侧壁 20与地膜相交; 基于监视抗蚀剂图案13的宽度与接地膜图案12的宽度之间的差异获得位移宽度Δs的步骤。（C）2004，JPO

公开(公告)号：JP2002026126A

公开(公告)日：2002-01-25

申请号：JP2000199839

申请日：2000-06-30

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  TANAKA SATOSHI ,  INOUE SOICHI

IPC: H01L21/00 ,  G06F17/50 ,  H01L21/82

Abstract: PROBLEM TO BE SOLVED: To provide a method of creating design rules, which enables obtaing easy creation of an optimal design rule, without much time or labor. SOLUTION: This method comprises a process of conducting a compaction of design layout of a semiconductor IC device so as to satisfy specified design rules; a process of predicting the finish shape of a pattern on a wafer, based on the design layout subjected to the compaction process; a process of comparing the estimated finish shape with the design layout subjected to the compaction process; a process of judging whether an evaluation result obtained from the comparison process satisfies a predetermined criterion; a process of altering the design rule, when the evaluation result is judged as being not satisfying the criterion; and a process of defining the altered design rule as a new design rule for the compaction process.

公开(公告)号：JP2001230180A

公开(公告)日：2001-08-24

申请号：JP2000036691

申请日：2000-02-15

Applicant: TOSHIBA CORP

Inventor： SATO KAZUYA ,  INOUE SOICHI

IPC: G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To simply inspect a secondary light source of an aligner in a short time. SOLUTION: A light radiated from a light source is repeated by a transparent part and a shielding part in a limited period, and introduced by an illumination optical system 2 to a photomask 3 formed with a pattern by an optical member having a pinhole pattern 21 and a grating pinhole patterns 22 to 29 shielded at its periphery, by the shielding region of a diffraction grating pattern in which a plurality of rations of the transparent parts and the shielding parts are given. Thus, a zero order diffracted light passed through the photomask 3 is radiated to a projection optical system 4, and a pattern image of the photomask 3 is transferred onto wafer 5. Then, light intensity distribution in a secondary light source formed in the system 2 is measured based on the pattern image of a zero order diffracted light transferred onto the wafer 5. Thus, the photomask 3 and the wafer 5 are transferred in a non-conjugate state with respect to the system 4.

公开(公告)号：JP2001102277A

公开(公告)日：2001-04-13

申请号：JP27321499

申请日：1999-09-27

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  TANAKA SATOSHI ,  KIYOU SUIGEN

IPC: H01L21/027 ,  G02B5/00 ,  G03F7/20

Abstract: PROBLEM TO BE SOLVED: To provide a density filter having a gradation part which varies linearly in transmissivity. SOLUTION: The density filter is inserted into an aligner between its 1st lighting optical system and 2nd lighting optical system, which protect the illumination light emitted by a light source on an original plate, where a specific pattern is formed and the gradation part has repeated patterns of light shield patterns 402 and light transmission patterns 401 arrayed and formed with intervals P, which meets two conditions represented by P

公开(公告)号：JPH11126824A

公开(公告)日：1999-05-11

申请号：JP28976797

申请日：1997-10-22

Applicant: TOSHIBA CORP

Inventor： KOTANI TOSHIYA ,  INOUE SOICHI ,  SANHONGI SHOJI ,  YAMAMOTO KAZUKO

IPC: G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G06F17/50 ,  H01L21/30 ,  H01L21/82 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To realize a pattern designing method witch is capable of forming a transfer parttern which is faithful to a design pattern, without providing an auxiliary pattern or the like and improving a finish pattern in dimensional accuracy without increasing the data amount. SOLUTION: In a method where an LSI pattern is designed, the long side B of a rectangle obtained by dividing a bent design pattern and a line width W are made to serve as parameters, line widths C which enable the required line widths W to be obtained for the long side B of the rectangle are formed into a correction table before a pattern is designed. Then when a pattern is designed, first the upper limit Bmax of a segment length is determined, a segment whose length is shorter than the upper limit Bmax is selected from among the segments of the bent design pattern, then a rectangle 4 which includes the selected segment is extracted, and then the line width W of the extracted rectangle 4 is corrected to a line width C by referring to the table.

公开(公告)号：JPH1167657A

公开(公告)日：1999-03-09

申请号：JP22954897

申请日：1997-08-26

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI ,  OKUMURA KATSUYA

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an exposure apparatus which does not give adverse effects on optical members with a very small amount of chemical substances existing in the open air, and moreover assures superior cost performance and safety. SOLUTION: This exposure apparatus comprises a light source section 11, an exposing section body 21 having a lighting optical system 23 for radiating light emitted from the light source section 11 to a mask 24 as the circuit pattern original plate and a projection optical system 25 for projecting the light beam reaching from the lighting optical system 23 via the mask 24 to an exposing sample 22, a filtering section 41 having at least one of charcoal filters, a basic substance eliminating filter, an acidic substance eliminating filter and a silicon compound eliminating filter and a light path forming section 31 for guiding the light emitted from the light source section 11 to the exposing section body 21 and filling a part of the body with the air filtered by the filtering section 41.

公开(公告)号：JPH10301829A

公开(公告)日：1998-11-13

申请号：JP10945497

申请日：1997-04-25

Applicant: TOSHIBA CORP

Inventor： INOUE SOICHI

IPC: G06F15/16 ,  G06F12/00 ,  G06F15/177 ,  G06F17/50

Abstract: PROBLEM TO BE SOLVED: To operate an EWS(engineering working station) cooperatively with a PC(personal computer). SOLUTION: An EWS2 of this PC-EWS system is provided with a communication equipment 20 which accepts an access request from a PC1 through an LAN4 to a common resource 3 of the EWS2, file deleting device 21 which detects whether or not an exclusive file is present when the access request is accepted by this communication equipment 20, and deletes the exclusive file when the exclusive file is detected, error processor 22 which checks the presence or absence of an error when the exclusive file is not detected, and wait device 23 which permits access from the PC1 to the common resource 3 when the error is not detected as the result of the error detection, and the exclusive file is not detected, and waits in a prescribed time and allows the file deleting device 21 to operate file detection again when the error is detected by the error processor 22.

公开(公告)号：JPH10300428A

公开(公告)日：1998-11-13

申请号：JP4060398

申请日：1998-02-23

Applicant: TOSHIBA CORP

Inventor： HAYAZAKI KEI ,  ITO SHINICHI ,  KAWANO KENJI ,  INOUE SOICHI ,  OKUMURA KATSUYA

IPC: G01B11/02 ,  G01N21/956 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To accurately control the dimension of resist patterns through the control of development time, even for different wafers. SOLUTION: A resist 110 on a wafer 100 is exposed to a device pattern 111, and the device pattern 111 is formed by a predetermined time of development. In this case, during exposure of the resist 110 rectangular element patterns are periodically arranged adjacent to one another, then exposure to a monitor pattern 112 which differs in repeating pitch from the device pattern 111 is effected, and during development of the resist 110 a parallel beam 201 having a wavelength of 400 nm is applied to the monitor pattern 111; the strength of primary diffracted light 203 obtained through diffraction by the monitor pattern 111 is detected, the device pattern is evaluated on the basis of the relation between dimensions calculated in advance and the strength of the diffracted light, and development time is controlled on the basis of the evaluation result.