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    Quality Control of High Performance Superconductor Tapes
    41.
    发明申请
    Quality Control of High Performance Superconductor Tapes 有权

    公开(公告)号：US20220406985A1

    公开(公告)日：2022-12-22

    申请号：US17865763

    申请日：2022-07-15

    Applicant: University of Houston System

    Inventor： Goran Majkic ,  Venkat Selvamanickam

    IPC: H01L39/24 ,  H01L39/14 ,  H01L39/12

    Abstract: A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

    High mobility silicon on flexible substrates
    42.
    发明授权
    High mobility silicon on flexible substrates 有权

    公开(公告)号：US11417519B2

    公开(公告)日：2022-08-16

    申请号：US17020441

    申请日：2020-09-14

    Applicant: University of Houston System

    Inventor： Venkat Selvamanickam ,  Pavel Dutta ,  Ying Gao

    IPC: H01L21/02 ,  H01L29/16

    Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm−3.

    Superconductor with improved flux pinning at low temperatures
    43.
    发明授权
    Superconductor with improved flux pinning at low temperatures 有权

    公开(公告)号：US10818416B2

    公开(公告)日：2020-10-27

    申请号：US14242587

    申请日：2014-04-01

    Applicant: The University of Houston System

    Inventor： Venkat Selvamanickam

    IPC: H01B12/02 ,  H01L39/24 ,  H01L39/14 ,  H01B1/02 ,  H01B1/08

    Abstract: A REBCO superconductor tape that can achieve a lift factor greater than or equal to approximately 3.0 or 4.0 in an approximately 3 T magnetic field applied perpendicular to a REBCO tape at approximately 30 K. In an embodiment, the REBCO superconductor tape can include a critical current density less than or equal to approximately 4.2 MA/cm2 at 77 K in the absence of an external magnetic field. In another embodiment, the REBCO superconductor tape can include a critical current density greater than or equal to approximately 12 MA/cm2 at approximately 30 K in a magnetic field of approximately 3 T having an orientation parallel to a c-axis.

    Quality Control of High Performance Superconductor Tapes
    45.
    发明申请
    Quality Control of High Performance Superconductor Tapes 审中-公开

    公开(公告)号：US20190198745A1

    公开(公告)日：2019-06-27

    申请号：US16329658

    申请日：2017-08-29

    Applicant: University of Houston System

    Inventor： Goran Majkic ,  Venkat Selvamanickam

    IPC: H01L39/24 ,  H01L39/12 ,  H01L39/14

    CPC classification number: H01L39/2461 ,  H01L39/126 ,  H01L39/143 ,  H01L39/2441 ,  Y02E40/64

    Abstract: A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

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