Apparatus and method of detecting temperature and apparatus for processing substrate
    41.
    发明授权
    Apparatus and method of detecting temperature and apparatus for processing substrate 有权
    检测温度的装置和方法以及处理衬底的装置

    公开(公告)号:US09470581B2

    公开(公告)日:2016-10-18

    申请号:US14190084

    申请日:2014-02-25

    Inventor: Sang Hyun Ji

    CPC classification number: G01J5/602 G01J5/0007 G01J2005/0048 G01J2005/067

    Abstract: Disclosed are an apparatus and method of detecting a temperature through a pyrometer in a non-contact manner, and an apparatus for processing a substrate using the apparatus, and more particularly, an apparatus and method of detecting a temperature, which precisely measures a temperature without any effect by humidity, and an apparatus for processing a substrate using the same. In an exemplary embodiment, an apparatus for detecting a temperature includes a humidity sensor configured to measure a humidity value, a temperature compensation database configured to store a temperature compensation value for each humidity value, and a pyrometer providing a non-contact temperature calculated by adding a temperature compensation value corresponding to a humidity value detected by the humidity sensor to a temperature to be compensated, which is obtained by converting a measured a wavelength intensity of a radiation radiated from an object in a wavelength band to be compensated.

    Abstract translation: 公开了以非接触方式通过高温计检测温度的装置和方法,以及使用该装置处理基板的装置,更具体地,涉及一种检测温度的装置和方法,其精确地测量温度而没有 湿度的任何影响,以及使用其的基板的处理装置。 在一个示例性实施例中,用于检测温度的装置包括被配置为测量湿度值的湿度传感器,配置为存储每个湿度值的温度补偿值的温度补偿数据库,以及提供非接触温度的高温计, 将由湿度传感器检测到的湿度值对应的温度补偿值与要补偿的温度相对应的温度补偿值,该温度补偿值是通过将被测量的被测物体辐射的波长的波长强度转换成待补偿的波段而得到的。

    COMPENSATED OPTICAL DETECTION APPARATUS, SYSTEMS, AND METHODS
    42.
    发明申请
    COMPENSATED OPTICAL DETECTION APPARATUS, SYSTEMS, AND METHODS 有权
    补偿光学检测装置,系统和方法

    公开(公告)号:US20140346324A1

    公开(公告)日:2014-11-27

    申请号:US14454390

    申请日:2014-08-07

    Abstract: In some embodiments, apparatus and systems, as well as methods, may operate to receive radiation at an active detector of a pair of radiation detectors to provide a first signal proportional to an intensity of the radiation, to receive none of the radiation at a blind detector of the pair of radiation detectors to provide a second signal proportional to the reception of no radiation, and to combine the first signal and the second signal to provide an output signal representing the difference between the first signal and the second signal. The pair of radiation detectors may comprise thermopile detectors. Combination may occur via differential amplification. Additional apparatus, systems, and methods are disclosed.

    Abstract translation: 在一些实施例中,设备和系统以及方法可以操作以在一对辐射检测器的有源检测器处接收辐射,以提供与辐射强度成比例的第一信号,以在盲人处接收辐射 检测器,以提供与无辐射的接收成比例的第二信号,以及组合第一信号和第二信号以提供表示第一信号和第二信号之间的差的输出信号。 该对辐射探测器可以包括热电堆检测器。 可以通过差分放大进行组合。 公开了附加装置,系统和方法。

    Compensated optical detection apparatus, systems, and methods
    43.
    发明授权
    Compensated optical detection apparatus, systems, and methods 有权
    补偿光学检测装置,系统和方法

    公开(公告)号:US08895928B2

    公开(公告)日:2014-11-25

    申请号:US13576318

    申请日:2011-02-03

    Abstract: In some embodiments, apparatus and systems, as well as methods, may operate to receive radiation at an active detector of a pair of radiation detectors to provide a first signal proportional to an intensity of the radiation, to receive none of the radiation at a blind detector of the pair of radiation detectors to provide a second signal proportional to the reception of no radiation, and to combine the first signal and the second signal to provide an output signal representing the difference between the first signal and the second signal. The pair of radiation detectors may comprise thermopile detectors. Combination may occur via differential amplification. Additional apparatus, systems, and methods are disclosed.

    Abstract translation: 在一些实施例中,设备和系统以及方法可以操作以在一对辐射检测器的有源检测器处接收辐射,以提供与辐射强度成比例的第一信号,以在盲人处接收辐射 检测器,以提供与无辐射的接收成比例的第二信号,以及组合第一信号和第二信号以提供表示第一信号和第二信号之间的差的输出信号。 该对辐射检测器可以包括热电堆检测器。 可以通过差分放大进行组合。 公开了附加装置,系统和方法。

    METHOD TO MODULATE THE SENSITIVITY OF A BOLOMETER VIA NEGATIVE INTERFERENCE
    46.
    发明申请
    METHOD TO MODULATE THE SENSITIVITY OF A BOLOMETER VIA NEGATIVE INTERFERENCE 审中-公开
    通过负面干扰来调节玻璃体的灵敏度的方法

    公开(公告)号:WO2016057880A1

    公开(公告)日:2016-04-14

    申请号:PCT/US2015/054855

    申请日:2015-10-09

    Abstract: A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.

    Abstract translation: 半导体传感器系统,特别是测辐射热计,包括基板,由基板支撑的电极,与基板间隔开的吸收体,电压源和电流源。 电极可以包括反射镜,或者系统可以包括与电极分离的反射镜。 吸收器的辐射吸收效率基于吸收器和反射镜之间的最小间隙距离。 电流源通过吸收器结构施加直流电流以产生指示由吸收体结构吸收的辐射的信号。 电压源为电极供电以产生作用在吸收器上的调制静电场,以调制最小间隙距离。 静电场包括用于调节吸收效率的DC分量,以及周期性地驱动吸收体负相干扰信号中的噪声的AC分量。

    INFRAROT-SENSORVORRICHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER INFRAROT-SENSORVORRICHTUNG

    公开(公告)号:EP2850659A1

    公开(公告)日:2015-03-25

    申请号:EP13718171.5

    申请日:2013-04-19

    Abstract: The invention relates to an infrared sensor device (100; 200; 300), comprising a semiconductor substrate (1), at least one sensor element (2) micromechanically formed in the semiconductor substrate (1), and at least one calibration element (3), micromechanically formed in the semiconductor substrate (1), for the sensor element (2), wherein absorber material (6) is arranged on the semiconductor substrate (1) in the area of the sensor element (2) and the calibration element (3), wherein one cavern (8) each is formed in the semiconductor substrate (1) substantially below the sensor element (2) and substantially below the calibration element (3), wherein the sensor element (2) and the calibration element (3) are thermally and electrically isolated from the rest of the semiconductor substrate (1) by means of the caverns (8). High sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio are thereby achieved for the infrared sensor device.

    Abstract translation: 本发明涉及一种红外传感器装置(100; 200; 300),其包括半导体衬底(1),微机械地形成在半导体衬底(1)中的至少一个传感器元件(2),以及至少一个校准元件 ),所述传感器元件(2)在所述半导体衬底(1)中微机械地形成,其中吸收材料(6)在所述传感器元件(2)的区域中布置在所述半导体衬底(1)上,并且所述校准元件 其特征在于,所述传感器元件(2)和所述校准元件(3)各自形成在所述半导体基板(1)中的大体在所述传感器元件(2)下方并且基本位于所述校准元件(3)下方的洞穴(8) )通过洞穴(8)与半导体衬底(1)的其余部分热和电隔离。 由此实现了红外传感器装置的高灵敏度,传感器元件的校准功能以及高信噪比。

    A temperature sensing arrangement
    48.
    发明公开
    A temperature sensing arrangement 失效
    温度感测装置

    公开(公告)号:EP0270299A3

    公开(公告)日:1990-01-10

    申请号:EP87310391.5

    申请日:1987-11-25

    Applicant: THORN EMI plc

    Abstract: A temperature sensor is incorporated within a housing 1 having a silicon window 2 through which infra-red radiation can enter. Mounted on a support structure 3, is a semiconductor fabrication consisting of a reference junction 14 and a sensing junction 15, covered with a black absorber 16. Junction 14 is responsive to the temperature of the housing 1, whereas junction 15 is responsive to the temperature of the housing and also the temperature of a remote zone from which infra-red radiation can enter the housing 1 via window 2. A Peltier heater/cooler 18 controls the temperature of housing 1, which temperature is monitored by a sensor to provide a measure of that of the remote zone.

    A temperature sensing arrangement
    49.
    发明公开
    A temperature sensing arrangement 失效
    TemperaturfühlendeAnordnung。

    公开(公告)号:EP0270299A2

    公开(公告)日:1988-06-08

    申请号:EP87310391.5

    申请日:1987-11-25

    Applicant: THORN EMI plc

    Abstract: A temperature sensor is incorporated within a housing 1 having a silicon window 2 through which infra-red radiation can enter. Mounted on a support structure 3, is a semiconductor fabrication consisting of a reference junction 14 and a sensing junction 15, covered with a black absorber 16. Junction 14 is responsive to the temperature of the housing 1, whereas junction 15 is responsive to the temperature of the housing and also the temperature of a remote zone from which infra-red radiation can enter the housing 1 via window 2. A Peltier heater/cooler 18 controls the temperature of housing 1, which temperature is monitored by a sensor to provide a measure of that of the remote zone.

    Abstract translation: 温度传感器结合在具有硅窗口2的壳体1内,红外辐射可以通过该窗口进入。 安装在支撑结构3上的是由参考结14和感测结15组成的半导体制造,覆盖有黑色吸收体16.结14对壳体1的温度作出响应,而结15响应于温度 以及远红外区域的温度,红外辐射可从该区域通过窗口2进入壳体1.珀尔帖加热器/冷却器18控制壳体1的温度,该温度由传感器监测以提供测量 的远程区域。

    INFRARED SENSOR
    50.
    发明授权

    公开(公告)号:EP2693178B1

    公开(公告)日:2018-09-12

    申请号:EP12764040.7

    申请日:2012-03-21

    CPC classification number: G01J5/10 G01J5/0215 G01J5/20 G01J2005/067 H01L37/02

    Abstract: Provided is a lightweight infrared sensor which is readily and stably erected to a substrate. The infrared sensor includes an insulating film; a first and a second heat sensitive element are disposed on one surface of the insulating film separately; a first and second conductive film on one surface of the insulating film and are respectively connected to the first and the second heat sensitive element; and an infrared reflection film on the other surface of the insulating film so as to face the second heat sensitive element. The infrared sensor further includes a reinforcing plate on which a sensor part window corresponding to a sensor part is formed and which is adhered to the insulating film; and a first and a second terminal electrode are respectively connected to the first and the second wiring film, are formed on the edge of the insulating film.

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