Abstract:
Disclosed are an apparatus and method of detecting a temperature through a pyrometer in a non-contact manner, and an apparatus for processing a substrate using the apparatus, and more particularly, an apparatus and method of detecting a temperature, which precisely measures a temperature without any effect by humidity, and an apparatus for processing a substrate using the same. In an exemplary embodiment, an apparatus for detecting a temperature includes a humidity sensor configured to measure a humidity value, a temperature compensation database configured to store a temperature compensation value for each humidity value, and a pyrometer providing a non-contact temperature calculated by adding a temperature compensation value corresponding to a humidity value detected by the humidity sensor to a temperature to be compensated, which is obtained by converting a measured a wavelength intensity of a radiation radiated from an object in a wavelength band to be compensated.
Abstract:
In some embodiments, apparatus and systems, as well as methods, may operate to receive radiation at an active detector of a pair of radiation detectors to provide a first signal proportional to an intensity of the radiation, to receive none of the radiation at a blind detector of the pair of radiation detectors to provide a second signal proportional to the reception of no radiation, and to combine the first signal and the second signal to provide an output signal representing the difference between the first signal and the second signal. The pair of radiation detectors may comprise thermopile detectors. Combination may occur via differential amplification. Additional apparatus, systems, and methods are disclosed.
Abstract:
In some embodiments, apparatus and systems, as well as methods, may operate to receive radiation at an active detector of a pair of radiation detectors to provide a first signal proportional to an intensity of the radiation, to receive none of the radiation at a blind detector of the pair of radiation detectors to provide a second signal proportional to the reception of no radiation, and to combine the first signal and the second signal to provide an output signal representing the difference between the first signal and the second signal. The pair of radiation detectors may comprise thermopile detectors. Combination may occur via differential amplification. Additional apparatus, systems, and methods are disclosed.
Abstract:
The present invention is directed to a camera, computer program, and method for determining and displaying temperature rates of change for objects within the camera's field of view. More specifically, the embodiments provide for the continuous, real-time temperature measurement and display of a plurality of objects within the camera's field of view, and further for the real-time processing and display of the temperature rates of change for said objects.
Abstract:
A warm shield as part of a thermal imaging system comprising a reflecting surface having a convex curvature that when positioned relative to an opening of a thermal imaging system, thermal energy originating from the opening of the thermal imaging system incident on the convex curvature is reflected in a direction away from the opening of the thermal imaging system. An aperture can be formed in the reflecting surface and positioned to facilitate passage therethrough of external thermal energy in a direction towards a detector of the thermal imaging system, and passage of at least some of the thermal energy originating from within the thermal imaging system in a direction away from the thermal imaging system.
Abstract:
A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.
Abstract:
The invention relates to an infrared sensor device (100; 200; 300), comprising a semiconductor substrate (1), at least one sensor element (2) micromechanically formed in the semiconductor substrate (1), and at least one calibration element (3), micromechanically formed in the semiconductor substrate (1), for the sensor element (2), wherein absorber material (6) is arranged on the semiconductor substrate (1) in the area of the sensor element (2) and the calibration element (3), wherein one cavern (8) each is formed in the semiconductor substrate (1) substantially below the sensor element (2) and substantially below the calibration element (3), wherein the sensor element (2) and the calibration element (3) are thermally and electrically isolated from the rest of the semiconductor substrate (1) by means of the caverns (8). High sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio are thereby achieved for the infrared sensor device.
Abstract:
A temperature sensor is incorporated within a housing 1 having a silicon window 2 through which infra-red radiation can enter. Mounted on a support structure 3, is a semiconductor fabrication consisting of a reference junction 14 and a sensing junction 15, covered with a black absorber 16. Junction 14 is responsive to the temperature of the housing 1, whereas junction 15 is responsive to the temperature of the housing and also the temperature of a remote zone from which infra-red radiation can enter the housing 1 via window 2. A Peltier heater/cooler 18 controls the temperature of housing 1, which temperature is monitored by a sensor to provide a measure of that of the remote zone.
Abstract:
A temperature sensor is incorporated within a housing 1 having a silicon window 2 through which infra-red radiation can enter. Mounted on a support structure 3, is a semiconductor fabrication consisting of a reference junction 14 and a sensing junction 15, covered with a black absorber 16. Junction 14 is responsive to the temperature of the housing 1, whereas junction 15 is responsive to the temperature of the housing and also the temperature of a remote zone from which infra-red radiation can enter the housing 1 via window 2. A Peltier heater/cooler 18 controls the temperature of housing 1, which temperature is monitored by a sensor to provide a measure of that of the remote zone.
Abstract:
Provided is a lightweight infrared sensor which is readily and stably erected to a substrate. The infrared sensor includes an insulating film; a first and a second heat sensitive element are disposed on one surface of the insulating film separately; a first and second conductive film on one surface of the insulating film and are respectively connected to the first and the second heat sensitive element; and an infrared reflection film on the other surface of the insulating film so as to face the second heat sensitive element. The infrared sensor further includes a reinforcing plate on which a sensor part window corresponding to a sensor part is formed and which is adhered to the insulating film; and a first and a second terminal electrode are respectively connected to the first and the second wiring film, are formed on the edge of the insulating film.