Abstract:
The present patent application improves DARP by allowing multiple users on one time slot (MUROS). It comprises means and instructions for signaling training sequence set information to a remote station, comprising receiving signaling from a remote station indicating if a new set of training sequences is supported, and using a channel description to signal the training sequence set to be used by the remote station for a communication channel being established. Other aspects, embodiments, and features are also claimed and described.
Abstract:
The present patent application improves DARP by allowing multiple users on one time slot (MUROS). It comprises means and instructions for signaling training sequence set information to a remote station, comprising receiving signaling from a remote station indicating if a new set of training sequences is supported, and using a channel description to signal the training sequence set to be used by the remote station for a communication channel being established.
Abstract:
The present patent application improves DARP by allowing multiple users on one time slot (MUROS). It comprises means and instructions for signaling training sequence set information to a remote station, comprising receiving signaling from a remote station indicating if a new set of training sequences is supported, and using a channel description to signal the training sequence set to be used by the remote station for a communication channel being established. Other aspects, embodiments, and features are also claimed and described.
Abstract:
An electron-beam controller (EBC) capable of controlling the power in an electron-beam is disclosed. The EBC can be implemented with an emitter, an extractor, a current mirror, and an input current having a magnitude responsive to the desired electron beam current. An EBC suited for low-efficiency emitters is also disclosed. A method for controlling the power intensity of an electron-beam over time is also disclosed. The method includes the steps of: (1) providing an emitter at a first voltage, (2) providing a target at a second voltage, (3) introducing an extractor at a controllable third voltage, (4) estimating the actual electron beam energy by sensing the emitter current; and (5) adjusting the third voltage in response to the sensed emitter current.
Abstract:
Disclosed are apparatus and method for obtaining energy from high electrical charge density entities. The energy may be received by the conductor of a traveling wave device positioned along the path which the propagating entities follow. Multiple traveling wave devices may be combined. Energy output from a traveling wave device may also be directed to the generation of a subsequent such entity. Thermal energy may also be obtained from an EV.
Abstract:
Disclosed are apparatus and method for obtaining energy from high electrical charge density entities. The energy may be received by the conductor of a traveling wave device positioned along the path which the propagating entities follow. Multiple traveling wave devices may be combined. Energy output from a traveling wave device may also be directed to the generation of a subsequent such entity. Thermal energy may also be obtained from an EV.
Abstract:
An ion trap device is provided as well as a method of manufacturing the ion trap device including a substrate, central DC electrode, RF electrode, side electrode and an insulating layer. Disposed over the substrate, the central DC electrode includes DC connector pad and DC rail connected thereto. The RF electrode includes RF rail adjacent to the DC rail and RF pad connected to RF rail. The side electrode has RF electrode disposed between thereof and the central DC electrode. The insulating layer supports one of the central DC electrode, RF electrode and side electrode, on a top surface of the substrate. The insulating layer includes first insulating layer and second insulating layer disposed over the first insulating layer, and the second insulating layer includes an overhang protruding with respect to the first insulating layer in a width direction of the ion trap device.
Abstract:
Embodiments include a random number generation entity having at least one switching cell comprising a pair of electrodes and a chalcogenide layer arranged between the pair of electrodes and a pulse generating entity coupled with the electrodes of the switching cell. The pulse generating entity is configured to provide an excitation pulse to the switching cell. The random number generation entity also includes a detection entity configured to provide a detection signal indicating whether an electrical property measured at the switching cell exceeds or falls below a threshold value due to applying the excitation pulse to the switching cell and a random number generation entity adapted to generate a random number based on the detection signal of the detection entity.
Abstract:
An automatic RF filter tuning system and a method for manufacturing a filter using the same are disclosed. An RF filter tuning system for tuning an RF filter that includes a plurality of cavities having resonance elements and a cover having tuning areas that are positioned correspondingly to the resonance elements, includes a measuring unit configured to measure resonance characteristics of the cavity of the RF filter, a control unit configured to calculate a tuning value of the RF filter based on the resonance characteristics, and a tuning unit configured to tune the RF filter based on the tuning value calculated by the control unit. The tuning unit includes a striking unit configured to strike the tuning area of the cover of the RF filter, thereby adjusting the resonance value and tuning the RF filter.