公开(公告)号：KR1020000058378A

公开(公告)日：2000-10-05

申请号：KR1020000024818

申请日：2000-05-10

Applicant: 대한민국(충남대학교)

Inventor： 송경빈 ,  원미선 ,  김소연 ,  이승환 ,  김철중 ,  전무형 ,  김현수

IPC: C12N15/70

CPC classification number: C12N15/70 ,  A61K38/16

Abstract: PURPOSE: Provided is MBP-agfA fused protein to mass-expressed agfA, which is Salmonella enteritidis fimbriae protein, in E.coli. CONSTITUTION: Samonella enteritidis is composed SEF 21, 17 and 14 fimbriae proteins, in which SEF17 consisting of agfA has an excellent antigen property and a potentiality to be used as vaccine against infection of Salmonella. The agfA subunit of Salmonella enteritidis fimbriae itself is not water-soluble, thereby it is not easy to apply to vaccine. The agfA subunit is fused with maltose binding protein in order to be soluble in water. The agfA subunit fused with maltose binding protein is mass-expressed in E. coli.

Abstract translation: 目的：在大肠杆菌中提供MBP-agfA融合蛋白与质粒表达的agfA，其是肠炎沙门氏菌菌毛蛋白。 构成：肠炎沙门氏菌组成SEF 21,17和14菌毛蛋白，其中由agfA组成的SEF17具有优良的抗原性能和潜在的抗沙门氏菌感染疫苗。 沙门氏肠杆菌菌毛本身的agfA亚基不是水溶性的，因此不易于应用于疫苗。 agfA亚基与麦芽糖结合蛋白融合，以溶于水。 与麦芽糖结合蛋白融合的agfA亚基在大肠杆菌中大量表达。

公开(公告)号：KR1020000056909A

公开(公告)日：2000-09-15

申请号：KR1019990006667

申请日：1999-02-27

Applicant: 대한민국(충남대학교)

Inventor： 윤순길 ,  신웅철 ,  최은석 ,  황준식

IPC: H01L29/40

Abstract: PURPOSE: A method for manufacturing an electrode structure for a semiconductor memory device is provided to be used as a storage electrode and a barrier layer for a stack of a dielectric and a polysilicon, by maintaining a stable boundary in a high temperature, by controlling an oxidation of a polysilicon, and by preventing a mutual diffusion between composed chemical elements. CONSTITUTION: A method for manufacturing an electrode structure for a semiconductor memory device, comprises the steps of: evaporating Ru3(CO)12 by a pyrolysis on silicon-containing material, to form a Ru layer; evaporating by having the Ru3(CO)12 react with an oxygen on the Ru layer, to form a RuO2 layer; and evaporating by having a (CH3)3(CH3C5H4)Pt react with an oxygen on the RuO2 layer, to form a Pt layer.

Abstract translation: 目的：制造用于半导体存储器件的电极结构的制造方法，通过控制高温下的稳定边界，将其用作电介质和多晶硅的堆叠的保持电极和阻挡层 多晶硅的氧化，以及防止组成的化学元素之间的相互扩散。 构成：制造半导体存储器件的电极结构的方法，包括以下步骤：通过在含硅材料上的热解使Ru 3（CO）12蒸发，形成Ru层; 通过使Ru 3（CO）12与Ru层上的氧反应形成RuO 2层而蒸发; 并通过使（CH3）3（CH3C5H4）Pt与RuO 2层上的氧反应而蒸发，形成Pt层。

公开(公告)号：KR100257478B1

公开(公告)日：2000-06-01

申请号：KR1019970071988

申请日：1997-12-22

Applicant: 원 창 환 ,  대한민국 충남대학교 부속 급속응고 신소재 연구소

Inventor： 원창환

IPC: B22F9/16

Abstract: PURPOSE: A method is provided to manufacture high purity tungsten (W) by leaching tungsten (W)-magnesium oxide (MgO) composite powder obtained as a byproduct of the reduction using about 20% hydrochloric acid (HCl) after reducing a raw material powder of ammonium paratungstate (5(NH4)2O·12WO3·5H2O) using magnesium (Mg) powder as a reductant in the self-propagating high temperature synthesis. CONSTITUTION: The method for manufacturing high purity tungsten powder comprises the steps of mixing ammonium paratungstate and magnesium in a mole ratio of 1:35; forming the formed mixture into a pellet by applying a forming pressure of 4 to 41 tons to the mixture; charging the pellet into a self-propagating high temperature synthesizing reactor under an inert gas atmosphere; burning the pellet in the self-propagating high temperature synthesizing reactor; discharging the manufactured burned product from the self-propagating high temperature synthesizing reactor; leaching the burned product using hydrochloric acid (HCl) which is diluted to 20%; filtering the leached exudation; and washing the filtered tungsten (W) powder.

Abstract translation: 目的：提供一种通过在还原原料粉末之后，使用约20％盐酸（HCl）浸出作为还原的副产物获得的钨（W） - 氧化镁（MgO）复合粉末来制造高纯度钨（W）的方法 的仲钨酸铵（5（NH4）2O·12WO3·5H2O））在自蔓延高温合成中使用镁（Mg）粉末作为还原剂。 构成：制造高纯度钨粉的方法包括以1:35的摩尔比混合仲钨酸铵和镁的步骤; 通过向混合物施加4至41吨的成形压力将形成的混合物形成颗粒; 在惰性气体气氛下将颗粒装入自蔓延的高温合成反应器中; 在自蔓延高温合成反应器中燃烧沉淀物; 从自蔓延的高温合成反应器排出所制造的烧制品; 使用稀释至20％的盐酸（HCl）浸出烧制品; 过滤渗滤液; 并洗涤过滤的钨（W）粉末。

公开(公告)号：KR100257476B1

公开(公告)日：2000-06-01

申请号：KR1019970066883

申请日：1997-12-09

Applicant: 원 창 환 ,  대한민국 충남대학교 부속 급속응고 신소재 연구소

Inventor： 원창환 ,  천병선

IPC: B22F9/16

Abstract: PURPOSE: A method is provided, which manufactures pure titanium (Ti) powder by leaching magnesium oxide (MgO) obtained as a byproduct of the reduction using nitric acid (HNO3) after reducing a raw material powder of titanium oxide (TiO2) powder using magnesium (Mg) powder as a reductant in the self-propagating high temperature synthesis. CONSTITUTION: A method for manufacturing pure titanium powder comprises the steps of mixing titanium oxide (TiO2) and magnesium (Mg) in a mole ratio of 1:2; forming the mixture into a pellet by applying a forming pressure of 4 to 41 tons to the mixture and thus compressing the mixture; charging the pellet into a self-propagating high temperature synthesizing reactor which is under an inert gas atmosphere (Ar); burning the pellet in the self-propagating high temperature synthesizing reactor; discharging the manufactured burned product from the self-propagating high temperature synthesizing reactor; leaching the burned product using nitric acid (HNO3) which is diluted to 5 to 50%; filtering the leached exudation; washing the filtered titanium (Ti) powder; and drying the washed titanium powder.

Abstract translation: 目的：提供一种通过在使用镁还原二氧化钛（TiO 2）粉末的原料粉末之后，使用硝酸（HNO 3）浸出作为还原剂的副产物而获得的氧化镁（MgO）制造纯钛（Ti）粉末的方法 （Mg）粉末作为自蔓延高温合成中的还原剂。 构成：制造纯钛粉末的方法包括以1：2的摩尔比混合氧化钛（TiO 2）和镁（Mg）的步骤; 通过对混合物施加4至41吨的成形压力将混合物形成颗粒，从而压缩混合物; 将颗粒装入处于惰性气体气氛（Ar）的自蔓延高温合成反应器中; 在自蔓延高温合成反应器中燃烧沉淀物; 从自蔓延的高温合成反应器排出所制造的烧制品; 使用稀释至5〜50％的硝酸（HNO 3）浸出烧制品; 过滤渗滤液; 洗涤过滤的钛（Ti）粉末; 并干燥洗涤的钛粉末。

公开(公告)号：KR1019990066254A

公开(公告)日：1999-08-16

申请号：KR1019980002022

申请日：1998-01-23

Applicant: 대한민국(충남대학교)

Inventor： 유승헌 ,  이향범 ,  전낙범 ,  손동화

IPC: A61K39/104

Abstract: 본 발명은 느타리버섯에 세균성 갈반(갈변)병을 일으키는 슈도모나스 톨라시(
Pseudomonas tolaasii, PT)에 대한 항PT 다중클론 항체(anti-PT polyclonal antibody)의 생산과 이를 이용한 효소면역측정법[enzyme-linked immunosorbent assay, 엘리자(ELISA)]에 관한 것으로 , 상세하게는 병원세균인 슈도모나스 톨라시를 동물에 면역하여 항PT 항체를 생산하고, 이를 이용하여 세균성 갈반(갈변)병균을 신속하고, 간편하게 동정하고, 진단하기 위한 경합, 비경합 간접 효소면역측정법(ELISA)에 관한 것이다.

公开(公告)号：KR1019990052498A

公开(公告)日：1999-07-15

申请号：KR1019970071989

申请日：1997-12-22

Applicant: 원 창 환 ,  천 병 선 ,  대한민국 충남대학교 부속 급속응고 신소재 연구소

Inventor： 원창환

IPC: B22F9/16

Abstract: 산화규소(SiO
2 )와 산화티탄(TiO
2 )을 원료 물질로 사용하고 알루미늄(Al) 과탄소(C)를 첨가하여 반응물을 만든후, 자체 연소 반응법(Self-propagating High-temperature Synthesis)을 이용하여 Al
2 O
3 -SiC-TiC 복합분말을 제조하는 방법이 개시되어 있다. 본 발명에 따르면, 산화규소(SiO
2 ), 산화티탄(TiO
2 ), 알루미늄(Al) 및 탄소(C)를 일정 몰비로 혼합한 후, 80MP의 성형 압력을 가하여 압축시켜서 펠렛을 형성한다. 다음에는, 펠렛을 자체 연소 반응기 내로 장입한후 400℃의 온도로 예열하여 반응물의 초기 온도를 높인다. 그런 후에, 아르곤(Ar) 가스 분위기하의 자체 연소 반응기 내에서 반응물을 점화·연소시킨다. 그 결과로서 생성된 연소 생성물인 Al
2 O
3 -SiC-TiC 복합분말은 99.948% 이상의 고순도를 나타낸다.