公开(公告)号：JP2002202416A

公开(公告)日：2002-07-19

申请号：JP2001383525

申请日：2001-12-17

Applicant: MEMSCAP ,  ADC TELECOMMUNICATIONS INC

Inventor： DELPOUX ARNAUD ,  KARAM JEAN-MICHEL ,  IANNELLO MARIE-ANGE ,  ZHANG NAN ,  NAULT GARY

IPC: G02B6/00 ,  G02B6/35 ,  G02B6/36

Abstract: PROBLEM TO BE SOLVED: To provide a device capable of arranging and holding the end of an optical fiber within a substrate and capable of adjusting the arrangement of the optical fiber after setting up. SOLUTION: The substrate 1 comprises a groove 2 for storing the end 4 of the optical fiber 3, the groove 2 is provided with a plane wall 8 orthogonal to the main surface of the substrate 1, and the groove 2 has a movable part 5 arranged in the facing surface of the plane wall 8. The movable part 5 is moved toward the plane wall 8 between two positions of a withdrawing position in which the end of the optical fiber 3 freely enters the groove 2 and a blocking position in which the movable part 5 presses the optical fiber 3 against the plane wall 8 by coming into contact with the optical fiber 3, and means 21 and 24 which move the movable part 5 toward the plane wall 8 by exerting fixed force on the movable part 5 are provided.

公开(公告)号：JP2002198780A

公开(公告)日：2002-07-12

申请号：JP2001314423

申请日：2001-10-11

Applicant: MEMSCAP

Inventor： GUILLON BERTRAND ,  BLONDY PIERRE

IPC: H01P1/20 ,  H01P1/203 ,  H01P7/00 ,  H01P7/08 ,  H03J1/00

Abstract: PROBLEM TO BE SOLVED: To provide a resonator that can adjust various characteristics such as a tuning frequency and its bandwidth over a comparatively wide range. SOLUTION: The electric resonator of this invention is a basic electric resonator (1) that is provided with a ribbon conductor (2) forming a flat loop and a conductor bridge (6) that is an arch bridging over segments (3, 4) to form a variable capacitor. Part of the bridge (6) is displaced with respect to the segments (3, 4) of the loop under the control of a control signal so as to change the capacitance of the capacitor resulting that the tuning frequency of the resonator can be revised.

公开(公告)号：JP2002093624A

公开(公告)日：2002-03-29

申请号：JP2001222312

申请日：2001-07-23

Applicant: MEMSCAP

Inventor： FEDELI JEAN-MARC ,  GUILLON BERTRAND

IPC: H01F17/00 ,  H01F17/04 ,  H01F27/34 ,  H01F41/04

Abstract: PROBLEM TO BE SOLVED: To provide a minute element capable of increasing a maximum operation frequency. SOLUTION: A minute element (1) is a minute inductor or a minute inductive transformer. A metal winding (2) with a form of solenoid, a magnetic core (4) located at the center of the solenoid (2) and having strips (12 and 13) made of ferromagnetic material are provided. A magnetic core (4) is located, in parallel with the strips (12 and 13), and at least one additional layer (14) for generating a magnetic field in a direction vertical to the axis (20) of the solenoid (2) is provided.

公开(公告)号：JP2002050520A

公开(公告)日：2002-02-15

申请号：JP2001197086

申请日：2001-06-28

Applicant: MEMSCAP

Inventor： FEDELI JEAN-MARC ,  GUILLON BERTRAND

IPC: H01F1/14 ,  H01F3/14 ,  H01F17/00 ,  H01F17/04 ,  H01F27/245 ,  H01F27/34

Abstract: PROBLEM TO BE SOLVED: To provide an induction microelement, provided with a magnetic core which can act at a specified high frequency. SOLUTION: In this microinductor or an induction microelement (1) such as a microtransformer, a metal winding (2) having a shape of a solenoid and a magnetic core (4) which is positioned at the center of the solenoid (2) are composed of ferromagnetic material are installed. The core (4) is constituted of a plurality of sections (13-16) which are isolated by cutouts (17-19), which are orientated perpendicular to a main axis (20) of the solenoid (2).

公开(公告)号：JP2000353617A

公开(公告)日：2000-12-19

申请号：JP2000133972

申请日：2000-05-02

Applicant: MEMSCAP ,  PLANHEAD SILMAG PHS

Inventor： KARAM JEAN-MICHEL ,  BASTERES LAURENT ,  MHANI AHMED ,  CHARRIER CATHERINE ,  BOUCHON ERIC ,  IMBERT GUY ,  MARTIN PATRICK ,  VALENTIN FRANCOIS

IPC: H01F17/00 ,  H01F17/04 ,  H01F17/06 ,  H01F41/04

Abstract: PROBLEM TO BE SOLVED: To provide a microelectric element, such as the microinductor, microtransformer, etc., having a satisfactory Q-factor or a large self-inductance value. SOLUTION: In a method for manufacturing a microelectric element, channels are formed in a substrate 1 by etching and copper segments 7 are formed in the channels. Then the upper surfaces of the segments 7 and the upper surface of the substrate 1 are made even, and at least one layer constituting a core is formed on the upper surfaces of the substrate 1 and the segments 7. Thereafter, the core is etched so that the core may be left only on bands and a plurality of arches 18 each of which couples one end of a certain segment 7, with one end of its adjacent segment 7 over the core being electrolytically grown astride over the core.

公开(公告)号：JP2000252125A

公开(公告)日：2000-09-14

申请号：JP2000047980

申请日：2000-02-24

Applicant: MEMSCAP ,  PLANHEAD SILMAG PHS

Inventor： BASTERES LAURENT ,  MHANI AHMED ,  VALENTIN FRANCOIS ,  KARAM JEAN-MICHEL

IPC: H01F27/28 ,  H01F17/00 ,  H01L21/822 ,  H01L23/64 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To obtain an inductor element, which has a superior Q-value at a low frequency and works at a high frequency, by providing a quartz substrate layer and an inductor formed of a spirally wound metal strip and using copper having a specific thickness or larger for the metallic strip. SOLUTION: An inductor element 1 is provided with a quartz substrate 2, on which a winding composed of a metallic strip 3 is arranged. The metal strip 3 forming an inductor is formed by using copper and spirally wound so as to form an inductor coil. The thickness of the strip 3 used is >=10 μm, close to about 30 μm. In addition, the quartz substrate 2 is covered with a polyimide layer, which is arranged between the substrate 2 and strip 3 forming the inductor. Particularly a segment 8, which connects the central part 9 of the spirally wound body to the end section 10 of the strip 3 which becomes one of two connecting terminals, is constituted so that the segment 8 passes through the polyimide layer.

公开(公告)号：US20030207097A1

公开(公告)日：2003-11-06

申请号：US10425415

申请日：2003-04-29

Applicant: MEMSCAP Le Parc Technologique des Fountaines

Inventor： Lionel Girardie

IPC: B32B009/00

CPC classification number: H01L21/022 ,  C23C16/40 ,  C23C16/45529 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  Y10T428/24975

Abstract: Multilayer structure, used especially as a material of high relative permittivity, characterized in that it comprises a plurality of separate layers, each having a thickness of less than 500 null. Some of those layers are based on aluminium, hafnium and oxygen and especially based on hafnium dioxide (HfO2) and on alumina (Al2O3). In practice, the hafnium dioxide and alumina layers form alloys of formula HfxAlyOz. Advantageously, the stoichiometry of the HfxAlyOz varies from one layer to another. Some of the layers containing HfxAlyOz alloys, or some of the layers between those containing HfxAlyOz alloys, also include a lanthanide element.

Abstract translation: 特别是特别用作高相对介电常数的材料的多层结构，其特征在于它包括多个单独的层，每个层具有小于500埃的厚度。 这些层中的一些基于铝，铪和氧，特别是基于二氧化铪（HfO 2）和氧化铝（Al 2 O 3）。 实际上，二氧化铪和氧化铝层形成式为Hf x Al y O z的合金。 有利地，Hf x Al y O z的化学计量从一层到另一层不同。 含有Hf x Al y O z合金的一些层，或含有Hf x Al y O z合金的层之间的一些层也包括镧系元素。

公开(公告)号：US20030194172A1

公开(公告)日：2003-10-16

申请号：US10391336

申请日：2003-03-18

Applicant: MEMSCAP

Inventor： Diaa Khalil ,  Kareem Madkour ,  Bassam Saadany ,  Tarek Badreldin ,  Philippe Helin

IPC: G02B006/35

CPC classification number: G02B6/3582 ,  G02B6/3512 ,  G02B6/3546 ,  G02B6/356 ,  G02B6/3584 ,  G02B6/3596

Abstract: An optical switching matrix, made from a semiconductor-D dielectric-based substrate, comprising: at least one set of optical input fibers (12) and at least one set of optical output fibers (14) oriented substantially perpendicular to each other, a set of moveable mirrors (5, 13) placed at the intersections of the directions defined by the various optical fibers, each mirror (13) being capable of moving in order to reflect a beam coming from an optical input fiber, bound for an optical output fiber, a set of channels defined between the mirrors, inside which the various beams are propagated before and after having encountered the mirrors, in which: the set of mirrors is made on a first substrate wafer (2), said first wafer being covered with a second substrate wafer (20), the various channels (38) are formed between protruding zones (34) present under the second substrate wafer, said protruding zones comprising housings (33) inside which the moveable mirrors are able to move.

Abstract translation: 一种由半导体-D电介质基底制成的光学开关矩阵，包括：至少一组光输入光纤（ 12）和至少一组光输出光纤（ 14 每个反射镜（ 13）定位成基本垂直的方向，一组位于由各种光纤限定的方向的交点处的可移动反射镜（ 5，13 ） ）能够移动，以便反射来自光输入光纤的束，光束输入光纤被限定在光输出光纤之间，在镜之间定义的一组通道，其中各个光束在遇到之前和之后传播 镜子，其中：一组镜子在第一衬底晶片（ 2 ）上制成，所述第一晶片被第二衬底晶片（ 20 ）覆盖， 在各个突出区域（ 34 ）之间形成各种通道（ 38 ） 在第二衬底晶片下面，所述突出区域包括可移动反射镜能够移动的壳体（ 33）。

公开(公告)号：US20030161081A1

公开(公告)日：2003-08-28

申请号：US10374354

申请日：2003-02-25

Applicant: MEMSCAP Le Parc Technologique des Fontaines

Inventor： Lionel Girardie

IPC: H01G002/12

CPC classification number: H01L29/511 ,  C23C16/40 ,  H01L21/28167 ,  H01L21/31604

Abstract: An electronic component produced from a substrate and incorporating a capacitive structure formed on top of the final visible metallization level produced in the substrate, said capacitive structure having two electrodes, wherein one of the electrodes comprises an array of superposed fins that are offset from one another with respect to a central trunk, the other electrode comprising two arrays of fins, the fins of each of the latter arrays being interleaved with the fins of the first electrode and being joined together by a common wall, the two common walls themselves being joined together above the first electrode.

Abstract translation: 一种电子部件，由基板制成并且包括形成在所述基板中产生的最终可见金属化层的顶部上的电容结构，所述电容结构具有两个电极，其中所述电极中的一个包括彼此偏移的叠置散热片阵列 相对于中央躯干，另一个电极包括两个翅片阵列，后者阵列中的每一个的翅片与第一电极的翅片交错并通过公共壁连接在一起，两个共同的壁本身连接在一起 在第一电极之上。

公开(公告)号：US20030124794A1

公开(公告)日：2003-07-03

申请号：US10318892

申请日：2002-12-13

Applicant: MEMSCAP

Inventor： Lionel Girardie

IPC: H01L021/8242 ,  H01L021/20

CPC classification number: H01L29/511 ,  C23C16/40 ,  C23C16/45529 ,  H01L21/28167 ,  H01L21/31604

Abstract: Electronic component incorporating an integrated circuit made in a substrate (1) and a planar capacitor, characterized in that the capacitor is made on top of a metallization plane of the component, this metallization plane forming a first electrode (2) of the capacitor, and in that the capacitor comprises: a first oxygen diffusion barrier layer (5) deposited on top of the metallization plane (2); a stack (6) of several different oxide layers, each layer having a thickness less than 100 nanometres, the stack being deposited on top of the first barrier layer (5); a second oxygen diffusion barrier layer (7) deposited on top of the stack of oxide layers (6); a metal electrode (20) present on top of the second barrier layer (7).

Abstract translation: 包括在基板（1）和平面电容器中制成的集成电路的电子部件，其特征在于，所述电容器形成在所述部件的金属化平面的顶部，所述金属化平面形成所述电容器的第一电极（2），以及 因为电容器包括：沉积在金属化平面（2）的顶部上的第一氧扩散阻挡层（5）; 多个不同氧化物层的堆叠（6），每个层具有小于100纳米的厚度，所述堆叠沉积在所述第一阻挡层（5）的顶部上; 沉积在氧化物层（6）的堆叠的顶部上的第二氧扩散阻挡层（7）; 存在于第二阻挡层（7）的顶部上的金属电极（20）。