公开(公告)号：WO2007041668A1

公开(公告)日：2007-04-12

申请号：PCT/US2006/038923

申请日：2006-10-03

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H05B1/02

CPC classification number: H01L21/6831 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: An electrostatic chuck ("chuck") is provided for controlling a radial temperature profile across a substrate when exposed to a plasma. The chuck includes a number of independently controllable gas volumes that are each defined in a radial configuration relative to a top surface of the chuck upon which the substrate is to be supported. The chuck includes a support member and a base plate. The base plate positioned beneath and in a spaced apart relationship from the support member. The gas volumes are defined between the base plate and the support member, with separation provided by annularly-shaped thermally insulating dividers. Each gas volume can include a heat generation source. A gas pressure and heat generation within each gas volume can be controlled to influence thermal conduction through the chuck such that a prescribed radial temperature profile is achieved across the substrate.

Abstract translation: 提供静电卡盘（“卡盘”），用于当暴露于等离子体时，控制跨基板的径向温度分布。 卡盘包括多个可独立控制的气体体积，每个气体体积相对于卡盘的顶表面以径向构型限定，衬底将被支撑在该顶板表面上。 卡盘包括支撑构件和基板。 底板位于支撑构件下方并以间隔开的关系。 气体体积被限定在基板和支撑构件之间，由环形隔热分隔件提供隔离。 每个气体体积可以包括发热源。 可以控制每个气体体积内的气体压力和发热量，以影响通过卡盘的热传导，使得跨越衬底实现规定的径向温度分布。

公开(公告)号：WO2006088697A3

公开(公告)日：2006-08-24

申请号：PCT/US2006/004284

申请日：2006-02-08

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: B23Q17/00 ,  B21D39/03 ,  C23F1/00 ,  H01L21/26 ,  C23C16/00

Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.

公开(公告)号：WO2006026266A1

公开(公告)日：2006-03-09

申请号：PCT/US2005/029946

申请日：2005-08-19

Applicant: LAM RESEARCH CORPORATION ,  BENJAMIN, Neil ,  GOTTSCHO, Richard, A ,  BRIGHT, Nicolas ,  STEGER, Robert

Inventor： BENJAMIN, Neil ,  GOTTSCHO, Richard, A ,  BRIGHT, Nicolas ,  STEGER, Robert

IPC: G06F19/00

CPC classification number: G01R31/3187 ,  G05B19/4184 ,  G05B2219/31362 ,  G05B2219/31463 ,  Y02P90/14 ,  Y02P90/86

Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

Abstract translation: 公开了一种基板处理系统中的部件管理方法。 衬底处理系统具有一组组件，该组组件中的至少多个组件被指定为智能组件，多个组件的每个组件具有智能组件增强（ICE）。 该方法包括查询多个组件以从它们各自的ICE请求它们各自的唯一标识数据。 该方法还包括如果多个组件中的任何组件响应于查询，则从多个组件接收唯一的标识数据。 该方法另外包括：如果在预期第一组件识别数据时多个组件的第一组件不能提供第一组件唯一标识数据，则标记第一组件以用于校正动作。

公开(公告)号：WO2005006400A2

公开(公告)日：2005-01-20

申请号：PCT/US2004/020749

申请日：2004-06-28

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01L

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/466 ,  H01J37/321 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

Abstract: A substrate support useful for a plasma processing apparatus includes a metallic heat transfer member and an overlying electrostatic chuck having a substrate support surface. The heat transfer memeber includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate temperature during plasma processing.

Abstract translation: 可用于等离子体处理装置的基板支撑件包括金属传热部件和具有基板支撑表面的上覆静电卡盘。 传热构件包括一个或多个通道，液体通过该通道循环以加热和/或冷却传热构件。 传热构件具有低热质量并且可以通过液体快速加热和/或冷却至所需温度，从而在等离子体处理期间快速改变衬底温度。

公开(公告)号：WO2004027816A3

公开(公告)日：2004-12-09

申请号：PCT/US0329309

申请日：2003-09-16

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: H05H1/46 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32642

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract translation: 一种用于在等离子体处理系统的等离子体处理室中处理多个基板的方法，所述基板中的每一个设置在卡盘上并且在处理期间被边缘环围绕。 该方法包括根据等离子体处理室中的给定工艺配方处理多个衬底中的第一衬底。 该方法进一步包括随后调整沿着等离子体处理室中的等离子体鞘与通过边缘环的卡盘之间的电容路径的电容的电容的电容值达到给定值。 该方法另外包括在调整之后根据等离子体处理室中的给定工艺配方处理多个衬底中的第二衬底，其中在不需要改变边缘环的情况下执行调整。

公开(公告)号：WO2004077505A3

公开(公告)日：2004-09-10

申请号：PCT/US2004/004134

申请日：2004-02-12

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01J37/32

Abstract: An etching system for etching a wafer of a material has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a plurality of heating elements disposed within the chuck. Each heating element is positioned adjacent to each preset location on the wafer. The etching system controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The etching system controller is also connected to the plurality of heating elements. The controller adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of the etch process to compensate for CD variation introduced by the lithography process preceding the etch process.

公开(公告)号：WO2001000901A1

公开(公告)日：2001-01-04

申请号：PCT/US2000/040229

申请日：2000-06-14

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J. ,  CHANG, Chris

Inventor： STEGER, Robert, J. ,  CHANG, Chris

IPC: C23C28/00

CPC classification number: C23C28/321 ,  C23C18/36 ,  C23C28/00 ,  C23C28/34 ,  C23C28/345

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Abstract translation: 诸如等离子体室的半导体加工设备的耐腐蚀部件包括金属表面，例如铝或铝合金，不锈钢或涂覆有磷镍镀层的耐火金属和外部陶瓷涂层如氧化铝，碳化硅，氮化硅 ，碳化硼或氮化铝。 磷镀镍可以通过无电镀来沉积，陶瓷涂层可以通过热喷涂沉积。 为了促进陶瓷涂层的粘附，可以在沉积陶瓷涂层之前对磷镍镀层进行表面粗糙化处理。

公开(公告)号：US3281750A

公开(公告)日：1966-10-25

申请号：US40247264

申请日：1964-10-08

Applicant: HUGO STEGER ROBERT

Inventor： HUGO STEGER ROBERT

IPC: H05B3/16

CPC classification number: H05B3/16