公开(公告)号：IL167491A

公开(公告)日：2009-08-03

申请号：IL16749105

申请日：2005-03-16

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: H05H1/46 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3065

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

公开(公告)号：WO2005013310A3

公开(公告)日：2005-05-12

申请号：PCT/US2004022060

申请日：2004-07-07

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32174

Abstract: A plasma processing reactor (200) includes a chamber (202) and a substrate support (216). The chamber includes an opening extending through a sidewall of the chamber. The substrate support is removably mounted within the chamber. The opening of the chamber is large enough to allow the substrate support to be removed from the chamber through the opening. A portion of a surface of the inner sidewall and the substrate support within the chamber has a coating (228). The coating is made of an electrically resistive material. The coating creates an impedance a long the portion of the surface of the inner sidewall, which would otherwise carry a greater portion of the RF return current than the opposite side of the chamber. The coating also creates an impedance along the substrate support so that t he density of the RF return current along the surface of the inner walls of the chamber is substantially more uniform

Abstract translation: 等离子体处理反应器（200）包括腔室（202）和衬底支撑件（216）。 腔室包括延伸穿过腔室的侧壁的开口。 衬底支撑件可移除地安装在腔室内。 室的开口足够大以允许衬底支撑件通过开口从腔室移除。 内侧壁的表面的一部分和腔室内的基底支撑件具有涂层（228）。 涂层由电阻材料制成。 该涂层在内侧壁的表面部分产生较长的阻抗，否则其将承受比腔的相对侧更大部分的RF返回电流。 涂层还沿衬底支撑件产生阻抗，使得沿室的内壁表面的RF返回电流的密度基本上更均匀

公开(公告)号：WO2004077505A2

公开(公告)日：2004-09-10

申请号：PCT/US2004004134

申请日：2004-02-12

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: F27B5/14 ,  F27B17/00 ,  F27D19/00 ,  F27D21/00 ,  F27D99/00 ,  H01J37/32 ,  H01L20060101 ,  H01L21/00 ,  H01L21/306 ,  H01L

CPC classification number: F27D99/0006 ,  F27B5/14 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248

Abstract: An etching system for etching a wafer of a material has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a plurality of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a plurality of heating elements disposed within the chuck. Each heating element is positioned adjacent to each preset location on the wafer. The etching system controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The etching system controller is also connected to the plurality of heating elements. The controller adjusts the temperature of each heating element during a process to reduce the variation of critical dimensions among the plurality of preset locations by using temperature dependent etching characteristics of the etch process to compensate for CD variation introduced by the lithography process preceding the etch process.

Abstract translation: 用于蚀刻材料的晶片的蚀刻系统具有测量装置，蚀刻室和控制器。 测量装置在多个预设位置测量沿着晶片轮廓的临界尺寸测试特征（CD）。 蚀刻室从测量装置接收晶片。 蚀刻室包括支撑晶片的卡盘和设置在卡盘内的多个加热元件。 每个加热元件邻近晶片上的每个预设位置定位。 蚀刻系统控制器耦合到测量装置以接收特定晶片的实际测量的CD。 蚀刻系统控制器也连接到多个加热元件。 控制器通过使用蚀刻工艺的温度依赖蚀刻特性来补偿由蚀刻工艺之前的光刻工艺引入的CD变化，来调节在加工过程中每个加热元件的温度以减小多个预设位置之间的临界尺寸的变化。

公开(公告)号：WO2007078656A2

公开(公告)日：2007-07-12

申请号：PCT/US2006047183

申请日：2006-12-11

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: B08B3/12

CPC classification number: B08B3/12 ,  B08B7/00

Abstract: A method of cleaning an ESC comprises immersing a ceramic surface of the ESC in dielectric fluid; spacing the ceramic surface of the ESC apart from a conductive surface such that the dielectric fluid fills a gap between the ceramic surface of the ESC and the conductive surface; and subjecting the dielectric fluid to ultrasonic agitation while simultaneously applying voltage to the ESC.

Abstract translation: 清洁ESC的方法包括将ESC的陶瓷表面浸入介电流体中; 将ESC的陶瓷表面与导电表面隔开，使得介电流体填充ESC的陶瓷表面和导电表面之间的间隙; 并对电介质流体进行超声波搅拌，同时向ESC施加电压。

公开(公告)号：WO2006088697A2

公开(公告)日：2006-08-24

申请号：PCT/US2006004284

申请日：2006-02-08

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: C23F1/00 ,  C23C16/00

CPC classification number: C23C16/45565 ,  H01J37/3244 ,  H01L21/67017 ,  H01L21/67069 ,  Y10T29/49771

Abstract: Methods for making gas distribution members for plasma processing apparatuses are provided. The gas distribution members can be electrodes, gas distribution plates, or other members. The methods include fabricating gas injection holes in a gas distribution member by a suitable technique, e.g., a mechanical fabrication technique, measuring gas flow through the gas distribution member, and then adjusting the permeability of the gas distribution member by the same fabrication technique, or by a different technique, e.g., laser drilling. The permeability of the gas distribution member can be adjusted at one or more zones of the member.

Abstract translation: 提供了制造等离子体处理装置的气体分配构件的方法。 气体分配构件可以是电极，气体分配板或其它构件。 所述方法包括通过合适的技术（例如机械制造技术）测量气体分配构件中的气体注入孔，测量通过气体分配构件的气体流量，然后通过相同的制造技术调节气体分配构件的渗透性，或 通过不同的技术，例如激光钻孔。 可以在构件的一个或多个区域调节气体分配构件的渗透性。

公开(公告)号：WO2005052995A3

公开(公告)日：2005-07-28

申请号：PCT/US2004038287

申请日：2004-11-15

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: G01J5/00 ,  G01K15/00 ,  H01L20060101

CPC classification number: G01J5/0003 ,  G01J5/0007

Abstract: In a plasma processing system, a method of determining the temperature of a substrate is disclosed. The method includes positioning the substrate on a substrate support structure, wherein the substrate support includes a chuck. The method further includes creating a temperature calibration curve for the substrate, the temperature calibration curve being created by measuring at least a first substrate temperature with an electromagnetic measuring device, and measuring a first chuck temperature with a physical measuring device during a first isothermal state. The method also includes employing a measurement from the electromagnetic measurement device and the temperature calibration curve to determine a temperature of the substrate during plasma processing.

Abstract translation: 在等离子体处理系统中，公开了一种确定衬底温度的方法。 该方法包括将衬底定位在衬底支撑结构上，其中衬底支撑件包括卡盘。 所述方法还包括为所述基板创建温度校准曲线，所述温度校准曲线是通过用电磁测量装置测量至少第一基板温度，以及在第一等温状态下用物理测量装置测量第一卡盘温度而产生的。 该方法还包括采用来自电磁测量装置和温度校准曲线的测量来确定等离子体处理期间的衬底的温度。

公开(公告)号：WO2007078656A3

公开(公告)日：2007-07-12

申请号：PCT/US2006/047183

申请日：2006-12-11

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: B08B3/12

Abstract: A method of cleaning an ESC comprises immersing a ceramic surface of the ESC in dielectric fluid; spacing the ceramic surface of the ESC apart from a conductive surface such that the dielectric fluid fills a gap between the ceramic surface of the ESC and the conductive surface; and subjecting the dielectric fluid to ultrasonic agitation while simultaneously applying voltage to the ESC.

公开(公告)号：WO2005006400A3

公开(公告)日：2006-04-13

申请号：PCT/US2004020749

申请日：2004-06-28

Applicant: LAM RES CORP ,  STEGER ROBERT J

Inventor： STEGER ROBERT J

IPC: C23C16/00 ,  C23C16/458 ,  H01L20060101 ,  H01L21/00 ,  H01L21/683 ,  C23C16/46 ,  C23C16/505 ,  H01L21/306

CPC classification number: F27D5/0037 ,  C23C16/4586 ,  C23C16/466 ,  H01J37/321 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6831

Abstract: A substrate support (40) useful for a plasma processing apparatus includes a metallic heat transfer member (48) and an overlying electrostatic chuck (50) having a substrate (70) support surface. The heat transfer member (48) includes one or more passage through which a liquid is circulated to heat and/or cool the heat transfer member. The heat transfer member has a low thermal mass and can be rapidly heated and/or cooled to a desired temperature by the liquid, so as to rapidly change the substrate (70) temperature during plasma processing.

Abstract translation: 可用于等离子体处理设备的衬底支撑件（40）包括金属传热构件（48）和具有衬底（70）支撑表面的上覆静电吸盘（50）。 传热构件（48）包括一个或多个通道，液体通过该通道循环以加热和/或冷却传热构件。 传热构件具有低的热质量，并且可以通过液体快速加热和/或冷却到所需的温度，从而在等离子体处理期间快速地改变衬底（70）的温度。

公开(公告)号：WO2005013310A2

公开(公告)日：2005-02-10

申请号：PCT/US2004/022060

申请日：2004-07-07

Applicant: LAM RESEARCH CORPORATION ,  STEGER, Robert, J.

Inventor： STEGER, Robert, J.

IPC: H01J37/32

CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32174

Abstract: A plasma processing reactor includes a chamber and a substrate support. The chamber includes an opening extending through a sidewall of the chamber. The substrate support is removably mounted within the chamber. The opening of the chamber is large enough to allow the substrate support to be removed from the chamber through the opening. A portion of a surface of the inner sidewall and the substrate support within the chamber has a coating. The coating is made of an electrically resistive material. The coating creates an impedance along the portion of the surface of the inner sidewall, which would otherwise carry a greater portion of the RF return current than the opposite side of the chamber. The coating also creates an impedance along the substrate support so that the density of the RF return current along the surface of the inner walls of the chamber is substantially more uniform.

Abstract translation: 等离子体处理反应器包括室和基板支撑件。 腔室包括延伸穿过腔室侧壁的开口。 衬底支撑件可移除地安装在腔室内。 室的开口足够大以允许衬底支撑件通过开口从腔室移除。 内侧壁的表面的一部分和腔室内的基底支撑件具有涂层。 涂层由电阻材料制成。 涂层沿着内侧壁表面的部分产生阻抗，否则其将承受比腔室相对侧更大部分的RF返回电流。 涂层还沿着衬底支撑件产生阻抗，使得沿室的内壁表面的RF返回电流的密度基本上更均匀。

公开(公告)号：WO2006068805A9

公开(公告)日：2006-08-24

申请号：PCT/US2005043801

申请日：2005-12-01

Applicant: LAM RES CORP ,  BENJAMIN NEIL ,  STEGER ROBERT J

Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

IPC: C23F4/00 ,  H01L21/683 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/67248 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68714

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1°C per second.

Abstract translation: 用于等离子体处理器的卡盘包括温度控制的基座，绝热体，平坦的支架和加热器。 温度控制的基座在工作温度下控制在低于工件所需温度的温度。 热绝缘体设置在温度受控基底的至少一部分上。 平面支撑件保持工件并且设置在绝热体上方。 加热器嵌入在平坦支撑件内和/或安装到平坦支撑件的下侧。 加热器包括加热多个相应的加热区域的多个加热元件。 每个加热元件的供电功率和/或温度独立地被控制。 加热器和平坦支架的组合温度变化率每秒至少为1°C。