公开(公告)号：KR1020030037065A

公开(公告)日：2003-05-12

申请号：KR1020010068159

申请日：2001-11-02

Applicant: 삼성전자주식회사

Inventor： 송영희 ,  최일흥 ,  손민영 ,  박민상

IPC: H01L27/02

CPC classification number: H01L24/05 ,  H01L23/5258 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L27/10897 ,  H01L2224/04042 ,  H01L2224/05155 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PURPOSE: A semiconductor device having fuse circuitry on a cell area is provided to increase integration of a semiconductor memory chip by transferring the fuse circuitry to the cell area, and to improve a focus problem in a laser repair process by redistributing the fuse circuitry under a passivation layer to a place on the passivation layer. CONSTITUTION: A semiconductor substrate(100) is prepared. The cell area(122) is formed on the semiconductor substrate. A peripheral area is formed in an area on the semiconductor substrate different from the cell area. The fuse circuitry(116) is formed on the cell area. The fuse circuitry is formed in the same plane as a pad redistribution pattern(110) on the cell area.

Abstract translation: 目的：提供在单元区域上具有熔丝电路的半导体器件，以通过将熔丝电路传送到单元区域来增加半导体存储器芯片的集成度，并且通过将熔丝电路重新分配在一个 钝化层到钝化层上的一个位置。 构成：制备半导体衬底（100）。 电池区域（122）形成在半导体衬底上。 外围区域形成在与电池区域不同的半导体衬底上的区域中。 熔丝电路（116）形成在电池区域上。 熔丝电路形成在与单元区域上的焊盘再分布图案（110）相同的平面中。

公开(公告)号：KR1020010037204A

公开(公告)日：2001-05-07

申请号：KR1019990044592

申请日：1999-10-14

Applicant: 삼성전자주식회사

Inventor： 박민상

IPC: H03K5/24

CPC classification number: G11C7/065 ,  G11C11/4074 ,  G11C11/4091 ,  G11C16/28

Abstract: PURPOSE: A current sensing amplifier employing a four-input two-output voltage differential amplifier is provided to minimize the delay time, operate the amplifier in a broad voltage range and improve the sensing power. CONSTITUTION: In a current sensing amplifier, memory cell and reference cell bit lines(MCBIT,REBIT) are biased into a memory cell bias circuit(401) and a reference cell bias circuit respectively. The first cell output signal(MCV1) and the second cell output signal(MCV2) produced by the memory cell bias circuit(401) are given to a 4-input 2-output voltage differential amplifier(405). The first reference output signal(REV1) and the second reference output signal(REV2) produced by the reference cell bias circuit(403) are also given to the voltage differential amplifier(405). The voltage differential amplifier(405) produce two amplified outputs(VAMP1,VAMP2) in opposite direction.

Abstract translation: 目的：提供采用四输入双输出电压差分放大器的电流感应放大器，以最小化延迟时间，在宽电压范围内操作放大器并提高感测功率。 构成：在电流感测放大器中，存储单元和参考单元位线（MCBIT，REBIT）分别偏置到存储单元偏置电路（401）和参考单元偏置电路中。 由存储单元偏置电路（401）产生的第一单元输出信号（MCV1）和第二单元输出信号（MCV2）被提供给4输入2-输出电压差分放大器（405）。 由参考单元偏置电路（403）产生的第一参考输出信号（REV1）和第二参考输出信号（REV2）也被提供给电压差分放大器（405）。 电压差分放大器（405）在相反方向产生两个放大输出（VAMP1，VAMP2）。