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公开(公告)号：KR101675115B1
公开(公告)日：2016-11-22
申请号：KR1020100002747
申请日：2010-01-12
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , B82Y10/00
Abstract: 산화물박막트랜지스터및 그제조방법에대해개시된다. 바텀게이트형산화물박막트랜지스터에서액티브영역이소스및 드레인을형성한후 게이트절연층과소스및 드레인사이영역에도형성됨으로써전기적특성이향상된산화물박막트랜지스터를구현할수 있다.
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公开(公告)号：KR1020150055475A
公开(公告)日：2015-05-21
申请号：KR1020130137889
申请日：2013-11-13
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78696 , H01L29/4908 , H01L29/7869
Abstract: 높은온/오프전류비를가진박막트랜지스터가개시된다. 개시된박막트랜지스터는, 기판상의게이트전극과, 상기게이트전극상방의제1 채널과, 상기제1 채널의양단에각각연결된소스전극및 드레인전극과, 상기제1 채널상에서상기게이트전극과마주보게상기제1 채널의상면에접촉하며상기제1 채널보다전기전도도가높은제2 채널을포함한다. 상기제2 채널은상기소스전극및 드레인전극과이격되며, 상기게이트전극은평면도로볼 때상기소스전극및 상기드레인전극과오버랩되지않게상기소스전극및 상기드레인전극사이에형성된다.
Abstract translation: 公开了具有高导通/截止电流比的薄膜晶体管。 所公开的晶体管包括：基板上的栅电极; 栅电极上方的第一通道; 源极和漏极连接到第一通道的相对端; 以及第二通道，其与第一通道的上侧接触以与第一通道上的栅电极相对，并且具有比第一通道的导电性更高的导电性。 第二通道与源极和漏极分离。 栅电极形成在源电极和漏电极之间，不与平面图的源电极和漏电极重叠。 根据本发明，当薄膜晶体管截止时，通过偏移结构防止在栅极和源极和漏极之间形成高电场。 因此，可以减少关断电流。
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53.发明公开불소를 포함하는 징크 타겟, 이를 이용한 징크 나이트라이드 박막의 제조방법 및 박막 트랜지스터 제조방법 审中-实审包含氟化物的ZINC目标，使用该方法的锌化合物薄膜的方法和使用该方法制造薄膜晶体管的方法
公开(公告)号：KR1020140144068A
公开(公告)日：2014-12-18
申请号：KR1020130066067
申请日：2013-06-10
Applicant: 삼성전자주식회사
CPC classification number: C23C14/3414 , C23C14/0057 , C23C14/0641 , C23C14/0676 , H01L29/66969 , H01L29/7869
Abstract: 불소를 포함하는 징크 타겟, 이를 이용한 징크 나이트라이드 박막의 제조방법 및 박막 트랜지스터 제조방법 이 개시된다. 개시된 불소를 포함하는 징크 나이트라이드 박막의 제조방법은 불소 함유 징크 타겟을 스퍼터링 챔버에 장착하는 단계와, 상기 챔버로 질소 개스 및 불활성 개스를 공급하는 단계와, 불소를 포함하는 징크 나이트라이드 박막을 상기 기판 상에 형성하는 단계를 포함한다.
Abstract translation: 公开了包括氟的锌靶，使用其的氮化锌薄膜的制造方法以及制造薄膜晶体管的方法。 所公开的包含氟的氮化锌薄膜的制造方法包括将含氟锌靶安装在溅射室中的步骤; 向室供应氮气和惰性气体; 以及在基板上形成含氟的氮化锌薄膜。
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公开(公告)号：KR1020140074742A
公开(公告)日：2014-06-18
申请号：KR1020120143031
申请日：2012-12-10
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/06 , H01L29/66742
Abstract: Disclosed are a transistor, a manufacturing method thereof, and an electronic device including the transistor. The disclosed transistor may include a channel layer containing metal nitroxide and a source electrode and a drain electrode in contact with first and second regions of the channel layer. The first and second regions of the channel layer may have a carrier concentration higher than the remaining region of the channel layer by being treated with plasma. The first and second regions may be regions treated with plasma containing hydrogen. The first and second regions may contain hydrogen. The first and second regions may have an oxygen concentration lower than the remaining region of the channel region. The first and second regions may have a nitrogen concentration higher than the remaining region of the channel layer. The metal nitroxide of the channel layer may include a ZnON-based semiconductor.
Abstract translation: 公开了晶体管及其制造方法以及包括该晶体管的电子器件。 所公开的晶体管可以包括含有金属氮氧化物的沟道层和与沟道层的第一和第二区域接触的源电极和漏电极。 通过用等离子体处理，沟道层的第一和第二区域可以具有高于沟道层的剩余区域的载流子浓度。 第一和第二区域可以是用含有氢的等离子体处理的区域。 第一和第二区域可以含有氢。 第一区域和第二区域的氧浓度可以低于沟道区域的剩余区域。 第一和第二区域的氮浓度可以高于沟道层的剩余区域。 沟道层的金属氮氧化物可以包括ZnON基半导体。
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公开(公告)号：KR1020130128280A
公开(公告)日：2013-11-26
申请号：KR1020120052212
申请日：2012-05-16
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/2206 , H01L29/36 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78693 , H01L21/02631 , H01L29/66742
Abstract: Disclosed is a transistor having a sulfur doped zinc oxynitride channel layer and a method for manufacturing the same. The transistor includes a ZnON channel layer doped with sulfur of 0.1-1.2 at.% with regard to a Zn content, a source and a drain electrode respectively formed in the first and the second region of the channel layer, and a gate insulating layer formed between the gate electrode and the channel layer, and a gate electrode corresponding to the channel layer.
Abstract translation: 公开了具有硫掺杂氮氧化锌通道层的晶体管及其制造方法。 所述晶体管包括相对于Zn含量掺杂有0.1-1.2原子％的硫的ZnON沟道层，分别形成在沟道层的第一和第二区域中的源极和漏极，以及形成栅极绝缘层 在栅电极和沟道层之间，以及对应于沟道层的栅电极。
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Patent Agency Ranking
公开(公告)号：KR1020130063408A
公开(公告)日：2013-06-14
申请号：KR1020110129910
申请日：2011-12-06
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , H01L21/336
CPC classification number: B32B3/26 , H01L29/4908 , H01L29/786 , H01L29/7869 , Y10T428/24479 , H01L27/1225 , H01L29/06
Abstract: PURPOSE: A transistor, a method for manufacturing the same, and an electronic device including the transistor are provided to secure a high mobility and to restrain the change of characteristics due to light. CONSTITUTION: A gate(G1) is positioned on a substrate(SUB1). A gate insulating layer(GI1) covering the gate is positioned on the substrate. A channel layer(C1) made of oxide semiconductor is positioned on the gate insulating layer. A source electrode(S1) is contacted with the one end of the channel layer. A drain electrode(D1) is contacted with the other end of the channel layer. A protection layer(P1) covering the channel layer, the source electrode, and the drain electrode is positioned on the gate insulating layer.
Abstract translation: 目的：提供晶体管及其制造方法以及包括晶体管的电子器件，以确保高迁移率并且抑制由于光引起的特性变化。 构成：门（G1）位于衬底（SUB1）上。 覆盖栅极的栅极绝缘层（GI1）位于基板上。 由氧化物半导体构成的沟道层（C1）位于栅极绝缘层上。 源电极（S1）与沟道层的一端接触。 漏电极（D1）与沟道层的另一端接触。 覆盖沟道层，源极和漏极的保护层（P1）位于栅极绝缘层上。
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公开(公告)号：KR1020120076062A
公开(公告)日：2012-07-09
申请号：KR1020100138042
申请日：2010-12-29
Applicant: 삼성전자주식회사
IPC: H01L29/78
CPC classification number: H01L29/7869 , H01L29/78693 , H01L21/823412 , H01L21/823418
Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electric component including the same are provided to effectively control characteristic change of the transistor due to light by forming a fluorine-containing domain in a back channel domain. CONSTITUTION: A gate(G1) is formed on a substrate(SUB1). A gate insulating layer(GI1) covering the gate is formed on the substrate. A channel layer(C1) is formed on the gate insulating layer. A source electrode(S1) and a drain electrode(D1) are formed on the gate insulating layer. The source electrode and the drain electrode are respectively touched with both ends of the channel layer. A fluorine-containing domain(10) is formed at the upper surface of the channel layer between the source electrode and the drain electrode. The interface between the source electrode and the channel layer is a fluorine-non-containing domain. The interface between the drain electrode and the channel layer is the fluorine-non-containing domain.
Abstract translation: 目的：提供晶体管及其制造方法以及包含该晶体管的电气元件，以通过在反向沟道区域中形成含氟畴来有效地控制由于光引起的晶体管的特性变化。 构成：在基板（SUB1）上形成栅极（G1）。 在基板上形成覆盖栅极的栅极绝缘层（GI1）。 沟道层（C1）形成在栅绝缘层上。 源极电极（S1）和漏电极（D1）形成在栅极绝缘层上。 源电极和漏电极分别与沟道层的两端相接触。 在源电极和漏电极之间的沟道层的上表面处形成含氟畴（10）。 源电极和沟道层之间的界面是不含氟的畴。 漏电极和沟道层之间的界面是不含氟的畴。
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公开(公告)号：KR1020120054496A
公开(公告)日：2012-05-30
申请号：KR1020100138043
申请日：2010-12-29
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/7869 , H01L29/66742 , H01L29/78696
Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to suppress photocurrent generation by differently arranging metal composition ratios of a back channel region and a front channel region. CONSTITUTION: A channel layer(C1) comprises an oxide semiconductor. The channel layer includes HfInZnO. A source and a drain are respectively connected to both ends of the channel layer. A gate(G1) is corresponded to the channel layer. A gate insulating layer(GI1) is arranged between the channel layer and the gate.
Abstract translation: 目的：提供晶体管及其制造方法以及包括该晶体管的电子器件，以通过不同地布置背沟道区域和前沟道区域的金属组成比来抑制光电流产生。 构成：沟道层（C1）包括氧化物半导体。 沟道层包括HfInZnO。 源极和漏极分别连接到沟道层的两端。 门（G1）对应于沟道层。 栅极绝缘层（GI1）布置在沟道层和栅极之间。
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公开(公告)号：KR1020070095467A
公开(公告)日：2007-10-01
申请号：KR1020050061395
申请日：2005-07-07
Applicant: 삼성전자주식회사
CPC classification number: F04D29/526 , F04D29/668
Abstract: A fan assembly is provided to effectively prevent vibration generated from a fan and to decrease noise caused by the vibration of the fan. A fan assembly comprises a fan(20), a supporting case(30), and a pair of vibration absorbing members(40). The supporting case is used to support at least one area along a circumferential direction of the fan. The vibration absorbing member is formed with at least one opening(45) penetrated to a plate surface, and positioned between the fan and the supporting case, to prevent noise generated by vibration generated from the fan, and also the vibration absorbing member includes a reception part(46) inserted into at least one area along the circumferential direction of the fan. The opening is penetrated to a side surface of each vibration absorbing member.
Abstract translation: 提供风扇组件以有效地防止由风扇产生的振动并且降低由风扇振动引起的噪音。 风扇组件包括风扇（20），支撑壳体（30）和一对振动吸收构件（40）。 支撑壳体用于沿着风扇的圆周方向支撑至少一个区域。 该振动吸收部件形成有贯穿板面的至少一个开口（45），并且位于风扇和支撑壳体之间，以防止由风扇产生的振动产生的噪声，并且振动吸收部件还包括接收 沿着风扇的圆周方向插入至少一个区域的部分（46）。 开口被贯通到各振动吸收部件的侧面。
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公开(公告)号：KR100576728B1
公开(公告)日：2006-05-03
申请号：KR1020040013902
申请日：2004-03-02
IPC: H04L12/16
Abstract: 음성 인식 가능한 웹 브라우저를 이용한 가전기기 제어 서비스 시스템 및 그 방법이 개시된다. 상기 가전기기 제어 서비스 시스템에서는, 웹 브라우저 실행 장치가 홈 서버로부터 가전기기 제어를 위한 웹 페이지를 불러와 명령 리스트를 유저에게 들려주면, 유저는 필요한 명령을 선택하여 음성으로 입력하고, 웹 브라우저 실행 장치가 이를 인식하여 홈 서버로 전송함으로써, 홈 서버가 유저의 음성 명령에 따라 각종 가전기기들을 제어한다.
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