公开(公告)号：KR1020070060578A

公开(公告)日：2007-06-13

申请号：KR1020050120292

申请日：2005-12-09

Applicant: 삼성전자주식회사

Inventor： 김부득 ,  윤은영 ,  한석 ,  윤효진 ,  류진아 ,  김재호 ,  김영호

IPC: G03F7/004 ,  G03F7/00

Abstract: Provided are a photoresist composition, which prevents generation of undissolved residues during the development and cleaning processes for forming a photoresist pattern, and a method for forming a pattern using the same. The photoresist composition comprises 4-10wt% of a photosensitive polymer resin, 0.15-0.4wt% of a photoacid generator which reacts with a light to produce acids, and the balance of solvent, wherein the photoacid generator includes aromatic groups having a hydrophilic group at the end thereof. The method for forming a pattern includes the steps of: coating an object(110) with the photoresist composition; baking the photoresist-coated object(110) to form a photoresist layer; selectively exposing the photoresist layer to a light transmitted through an exposure mask; and developing the exposed photoresist layer to form a photoresist pattern(130).

Abstract translation: 提供了防止在用于形成光致抗蚀剂图案的显影和清洁工艺期间产生未溶解残余物的光致抗蚀剂组合物，以及用于形成使用其的图案的方法。 光致抗蚀剂组合物包含4-10重量％的光敏聚合物树脂，0.15-0.4重量％的与光反应产生酸的光酸产生剂，余量为溶剂，其中光酸产生剂包括具有亲水基团的芳族基团 其结尾。 形成图案的方法包括以下步骤：用光致抗蚀剂组合物涂覆物体（110）; 烘烤光致抗蚀剂涂覆物体（110）以形成光致抗蚀剂层; 将光致抗蚀剂层选择性地暴露于透过曝光掩模的光; 以及显影曝光的光致抗蚀剂层以形成光致抗蚀剂图案（130）。