-
公开(公告)号：WO2019045371A1
公开(公告)日：2019-03-07
申请号：PCT/KR2018/009791
申请日：2018-08-24
Applicant: 삼성전자주식회사
Abstract: 본 발명은 냉장고 및 그 제어 방법을 제안한다. 고내 온도를 제어할 수 있는 각종 센서(고내 센서 및/또는 외기 센서) 등을 장착한 시스템 제어기를 사용하지 않고, 기존의 저용량/저가형 냉장고에서 사용하던 서모스탯을 이용하여 고내 온도와 압축기의 속도를 제어함으로써 제어 시스템의 크기와 재료비를 최소화할 수 있다. 또한, BDLC 압축기를 제어할 수 있는 인버터 제어기에서 압축기의 운전 정보를 이용하여 고내/외기 온도를 추정하고, 고내의 부하를 판단하기 때문에 정속형 압축기의 최대 단점인 에너지 절약, 진동 및 소음 저감 등을 실현하여 소비자의 만족도를 향상시킬 수 있다. 또한, 인버터 제어기의 차별화된 알고리즘을 적용하여 BLDC 압축기의 기동 및 운전을 안정적으로 수행할 수 있다.
-
-
-
公开(公告)号：KR1020160125830A
公开(公告)日：2016-11-01
申请号：KR1020150056843
申请日：2015-04-22
Applicant: 삼성전자주식회사
IPC: H01L21/033 , H01L21/3105
CPC classification number: H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/3223 , H01L21/425 , H01L21/426 , H01L27/10855 , H01L27/10888
Abstract: 반도체소자의제조에서, 기판상에마스크막및 제1 박막을형성하고, 상기제1 박막을사진식각공정을통해패터닝하여 1차패턴을형성하고, 상기 1차패턴표면상에실리콘산화막을형성하고, 상기실리콘산화막표면상에실리콘을포함하는물질을코팅하여코팅막패턴을형성하고, 그리고상기 1차패턴, 상기실리콘산화막및 코팅막패턴을포함하는 2차패턴을식각마스크로이용하여상기마스크막을식각하여마스크패턴을형성한다. 상기방법에의하면, 균일한크기를갖는마스크패턴을형성할수 있다.
Abstract translation: 在制造半导体器件的方法中，掩模层和第一层可以顺序形成在衬底上。 可以通过光刻工艺来构图第一层以形成第一图案。 可以在第一图案上形成氧化硅层。 可以在氧化硅层上形成包括硅的涂层图案。 可以使用第二图案作为蚀刻掩模蚀刻掩模层以形成掩模图案，并且第二图案可以包括第一图案，氧化硅层和涂层图案。 掩模图案可以具有均匀的尺寸。
-
公开(公告)号：KR101663032B1
公开(公告)日：2016-10-06
申请号：KR1020100089047
申请日：2010-09-10
Applicant: 삼성전자주식회사
CPC classification number: H05H1/0031 , H05H1/2406 , H05H2001/2431
Abstract: 공정모니터링장치와이를구비한반도체공정설비, 그리고이를이용한공정모니터링방법이제공된다. 공정모니터링장치는양단이개방된실린더형상을가지는제 1 전극과, 로드형상을가지고길이방향이제 1 전극의길이방향을향하도록제 1 전극내에삽입되는제 2 전극을이용하여유전체장벽방전(DBD) 방식으로챔버의배기가스로부터플라즈마를발생하고, 플라즈마방출광의분광스펙트럼을분석하여챔버내에서진행되는반도체제조공정을모니터링한다.
-
Patent Agency Ranking
-
公开(公告)号：KR1020100115474A
公开(公告)日：2010-10-28
申请号：KR1020090034066
申请日：2009-04-20
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: G03F7/0048 , G03F7/0046 , G03F7/0392 , G03F7/004 , G03F7/0045 , G03F7/20 , G03F7/202
Abstract: PURPOSE: A method for forming micro pattern and photoresist composition are provided to enhance resolution of the pattern and to reduce pattern defect. CONSTITUTION: A method for forming a micro pattern comprises: a step of applying a photoresist composition on the substrate(20) to form photoresist film(22); a step of exposing the photoresist film to the light; and a step of developing the photoresist film using aqueous alkali developing liquid to form a photoresist pattern. The photoresist composition contains: a hydrophobic first repeat unit having a side chain with 3 or more hydroxyl group-substituted heterocyclic ring; a polymeric polymer resist additive having hydrophobic second repeat unit; a polymer having an acid-labile protection group at the side chain; photoacid generator; and solvent.
Abstract translation: 目的：提供形成微图案和光致抗蚀剂组合物的方法以增强图案的分辨率并减少图案缺陷。 构成：形成微图案的方法包括：将光致抗蚀剂组合物施加在基底（20）上以形成光致抗蚀剂膜（22）的步骤; 将光致抗蚀剂膜曝光的步骤; 以及使用水性碱性显影液显影光致抗蚀剂膜以形成光致抗蚀剂图案的步骤。 光致抗蚀剂组合物含有：具有3个以上羟基取代杂环的侧链的疏水性第一重复单元; 具有疏水性第二重复单元的聚合物聚合物抗蚀剂添加剂; 在侧链具有酸不稳定保护基的聚合物; 光酸发生器; 和溶剂。
-
8.发明公开
公开(公告)号：KR1020090067092A
公开(公告)日：2009-06-24
申请号：KR1020080129565
申请日：2008-12-18
Applicant: 삼성전자주식회사
IPC: G03F7/11
CPC classification number: G03F7/091 , G03F7/038 , Y10S430/106 , Y10S430/114 , Y10S430/128 , G03F7/11
Abstract: A composition for anti-reflective coating containing a polymer for anti-reflective coating is provided to form the pattern of excellent profile by regulating the diffusion of acid in an anti-reflective coating film. A polymer for anti-reflective coating comprises a first repeating unit containing basic functional group of the chemical formula 1, a second repeating unit having a light absorbing functional group and a third repeating unit having crosslinking functional group. In the chemical formula 1, R1 is hydrogen or low alkyl group of C1-C4; X is alkylene, arylene, oxyakylene, alkyleneoxy, oxyarylene, aryleneoxy, carbonyl, oxy, oxycarbonyl, carbonyloxy, carbonyl alkylene, carbonyl arylene, alkylene carbonyl, arylene carbonyl and bivalent selected from them.
Abstract translation: 提供含有抗反射涂层用聚合物的抗反射涂层用组合物，以通过调节抗反射涂膜中酸的扩散来形成优异轮廓的图案。 用于抗反射涂层的聚合物包括含有化学式1的碱性官能团的第一重复单元，具有光吸收官能团的第二重复单元和具有交联官能团的第三重复单元。 在化学式1中，R1是C1-C4的氢或低级烷基; X是亚烷基，亚芳基，氧亚烷基，亚烷氧基，氧亚芳基，亚芳氧基，羰基，氧基，氧羰基，羰氧基，羰基亚烷基，羰基亚芳基，亚烷基羰基，亚芳基羰基和选自它们的二价。
-
公开(公告)号：KR1020080092154A
公开(公告)日：2008-10-15
申请号：KR1020070035669
申请日：2007-04-11
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: H01L21/0275 , G03F7/2004 , G03F7/7045 , G03F7/70466
Abstract: A method for forming fine patterns of a semiconductor device is provided to store energy in a photoresist layer even if smaller energy is projected than threshold energy, thereby obtaining the desired fine patterns. A method for forming fine patterns of a semiconductor device comprises the steps of: forming a photoresist layer having threshold energy on a semiconductor substrate(101), the threshold energy corresponding to minimum exposure energy to react to the photoresist layer chemically; projecting a first light having a first energy which is lower than the threshold energy to a first region of the photoresist layer to form a preliminary exposure region maintaining the first energy, the preliminary exposure region limiting a non-exposure region; projecting a second light having a second energy which is lower than the threshold energy to a second region in the preliminary exposure region and to the non-exposure region to convert the second region into an exposure region, the sum of the first and second energies the same and higher as/than the threshold energy; and removing the exposure region selectively to form photoresist patterns(110).
Abstract translation: 提供了一种用于形成半导体器件的精细图案的方法，用于在光刻胶层中存储能量，即使投射的能量小于阈值能量，从而获得所需的精细图案。 一种用于形成半导体器件的精细图案的方法包括以下步骤：在半导体衬底（101）上形成具有阈值能量的光致抗蚀剂层，对应于最小曝光能量的阈值能量与光刻胶层化学反应; 将具有低于阈值能量的第一能量的第一光投射到光致抗蚀剂层的第一区域，以形成保持第一能量的初步曝光区域，该预曝光区域限制非曝光区域; 将具有低于阈值能量的第二能量的第二光投射到预曝光区域中的第二区域和将非曝光区域投影到第二区域以将第二区域转换为曝光区域，第一和第二能量之和 相同和高于阈值能量; 并选择性地去除曝光区域以形成光致抗蚀剂图案（110）。
-
公开(公告)号：KR1020080070559A
公开(公告)日：2008-07-30
申请号：KR1020080007622
申请日：2008-01-24
Applicant: 삼성전자주식회사
IPC: G03F7/004
CPC classification number: C07D493/08 , C07C309/12 , C07C381/12 , C07C2603/74 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/123 , G03F7/0047
Abstract: A photoacid generator, a photoresist composition containing the photoacid generator, and a method for forming a pattern by using the composition are provided to obtain a photoresist pattern having a uniform profile. A photoacid generator comprises at least one sulfonium salt cation part selected from sulfonium salt cation parts represented by the formulas 1, 2, 3 and 4; and a sulfonium salt anion part containing a carboxyl group as a hydrophilic site represented by the formula 5, wherein R1, R2, R3 and R4 are independently H or a C1-C5 alkyl group; n is 1-3; and X is a C4-C10 cyclo group, an adamantal group or a cycloheptane group containing an oxygen atom.
Abstract translation: 提供光酸产生剂，含有光致酸发生剂的光致抗蚀剂组合物和通过使用该组合物形成图案的方法，以获得具有均匀轮廓的光致抗蚀剂图案。 光酸产生剂包含至少一种选自由式1,2,3和4表示的锍盐阳离子部分的锍盐阳离子部分; 和含有羧基作为由式5表示的亲水性位点的锍盐阴离子部分，其中R 1，R 2，R 3和R 4独立地为H或C 1 -C 5烷基; n为1-3; X是C 4 -C 10环基，金刚烷基或含有氧原子的环庚烷基。
-
-
-
-
-
-
-
-
-
Search Results
51
records
(took 0.024 seconds)
