公开(公告)号：KR1020050032352A

公开(公告)日：2005-04-07

申请号：KR1020030068392

申请日：2003-10-01

Applicant: 삼성전자주식회사

Inventor： 이재경 ,  정창오

IPC: G02F1/13

Abstract: A sputtering apparatus for manufacturing an LCD(Liquid Crystal Display) is provided to reduce a time period for progressing a sputtering process and bulk of a chamber and to minimize stress applied to a substrate by inputting the substrate into each chamber with standing the substrate at an angle by which a process is proceeded. A transfer chamber includes a transfer unit for transferring a substrate(200) by standing it at a predetermined angle by which a process is proceeded. A process chamber(140) includes a susceptor(142) connected to the transfer chamber and a target(146) for depositing a thin film on the substrate. The susceptor where the substrate is mounted is installed at the same angle as the substrate transferred from the transfer unit is stood. The target is installed vertically so as to be opposite to the susceptor.

Abstract translation: 提供了一种用于制造LCD（液晶显示器）的溅射装置，以减少进行溅射过程和室的体积的时间段，并且通过将基板放置在每个室中使基板驻留在每个室中来最小化施加到基板的应力 一个进程进行的角度。 传送室包括：转印单元，用于通过以预定的角度放置基板（200），通过该预定角度进行处理。 处理室（140）包括连接到传送室的基座（142）和用于在衬底上沉积薄膜的靶（146）。 安装基板的基座以与从转印单元转移的基板相同的角度安装。 目标垂直安装，以便与基座相对。

公开(公告)号：KR1020040063367A

公开(公告)日：2004-07-14

申请号：KR1020030000757

申请日：2003-01-07

Applicant: 삼성전자주식회사

Inventor： 조범석 ,  정창오 ,  성명모 ,  양희정 ,  이재갑

IPC: H01L29/786

CPC classification number: H01L29/78603 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L2224/32245

Abstract: PURPOSE: A method for forming a metal interconnection of a substrate of a thin film transistor is provided to improve adhesion of a substrate and a metal interconnection and effectively prevent a metal interconnection material from being diffused to the substrate by including SAM's(self-assembled monolayers) between the substrate and the metal interconnection. CONSTITUTION: An insulation substrate is prepared. The first signal line is formed on the insulation substrate. The first insulation layer is formed on the first signal line. The second signal line is formed on the first insulation layer, crossing the first signal line. A thin film transistor is electrically connected to the first and second signal lines. The second insulation layer is formed on the thin film transistor, having the first contact hole exposing a predetermined electrode of the thin film transistor. A pixel electrode is formed on the second insulation layer, connected to a predetermined electrode of the thin film transistor through the first contact hole. Either one of the first or second signal line has a copper interconnection structure or a copper alloy interconnection structure that is made of a dual layer composed of SAM's and a copper layer.

Abstract translation: 目的：提供一种用于形成薄膜晶体管的基板的金属互连的方法，以提高基板和金属互连的粘合性，并且通过包括SAM（自组装单层）来有效地防止金属互连材料扩散到基板 ）在基板和金属互连之间。 构成：制备绝缘基板。 第一信号线形成在绝缘基板上。 第一绝缘层形成在第一信号线上。 第二信号线形成在第一绝缘层上，与第一信号线交叉。 薄膜晶体管电连接到第一和第二信号线。 第二绝缘层形成在薄膜晶体管上，具有暴露薄膜晶体管的预定电极的第一接触孔。 像素电极形成在第二绝缘层上，通过第一接触孔连接到薄膜晶体管的预定电极。 第一或第二信号线中的任一个具有铜互连结构或由由SAM构成的双层和铜层构成的铜合金互连结构。

公开(公告)号：KR1020040005258A

公开(公告)日：2004-01-16

申请号：KR1020020039748

申请日：2002-07-09

Applicant: 삼성전자주식회사

Inventor： 정창오 ,  박홍식 ,  조범석

IPC: G02F1/136

CPC classification number: G02F1/136286 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/136222 ,  G02F2001/136295 ,  G02F2201/123

Abstract: PURPOSE: A thin film transistor substrate is provided to form a contact layer on a substrate and then form a copper line on the contact layer so as to increase adhesion of the substrate and copper line. CONSTITUTION: A thin film transistor substrate includes an insulating substrate(110), a gate line having a gate electrode(123) and a gate pad(125), a gate insulating layer(140) formed on the insulating substrate, a semiconductor layer(151,153) formed on the gate insulating layer, and an ohmic contact layer(163,165) formed on the semiconductor layer. The thin film transistor substrate further includes a data line having a source electrode(173), a drain electrode(175) and a data pad(179), a passivation layer(180) that is formed on the data line and has a contact hole, and a pixel electrode(190) formed on the passivation layer and electrically connected to the drain electrode through the contact hole. At least one of the gate line and data line is composed of a double layer of a contact layer and a copper layer.

Abstract translation: 目的：提供薄膜晶体管衬底以在衬底上形成接触层，然后在接触层上形成铜线，以增加衬底和铜线的粘附。 构成：薄膜晶体管基板包括绝缘基板（110），具有栅极（123）和栅极焊盘（125）的栅极线，形成在绝缘基板上的栅极绝缘层（140），半导体层（ 形成在栅极绝缘层上的欧姆接触层（163,165），形成在半导体层上的欧姆接触层（163,165）。 薄膜晶体管基板还包括具有源电极（173），漏电极（175）和数据焊盘（179）的数据线，形成在数据线上并具有接触孔的钝化层（180） ，以及形成在钝化层上并通过接触孔电连接到漏电极的像素电极（190）。 栅极线和数据线中的至少一个由接触层和铜层的双层组成。

公开(公告)号：KR1020030090828A

公开(公告)日：2003-12-01

申请号：KR1020020028414

申请日：2002-05-22

Applicant: 삼성전자주식회사

Inventor： 정창오 ,  박홍식 ,  조범석

IPC: G02F1/136

CPC classification number: G02F1/136286 ,  G02F1/133345 ,  G02F1/13458 ,  G02F1/136277 ,  G02F1/1368 ,  G02F2001/136295

Abstract: PURPOSE: A thin film transistor substrate and a method for manufacturing the same are provided to etch metal and amorphous silicon layers in the same chamber by forming data wiring only by a wet etching. CONSTITUTION: Tungsten is deposited on a transparent insulating substrate(110) and is patterned by a photo etching to form gate wiring(121,123,125). A gate insulating layer(140) is formed on the gate wiring. Amorphous silicon layers(151,153) and resistant contact layers(161,163,165) are formed on the gate insulating layer. Data wiring formed of tungsten is formed on the resistant contact layers and the gate insulating layer. A passivation layer(180) is formed on the data wiring, including contact holes(181,182,183,184). Pixel electrodes(190) are formed on the passivation layer, and electrically connected with drain electrodes(175) through the contact holes.

Abstract translation: 目的：提供薄膜晶体管基板及其制造方法，以通过仅通过湿蚀刻形成数据布线来蚀刻同一腔室中的金属和非晶硅层。 构成：将钨沉积在透明绝缘衬底（110）上，并通过光蚀刻图案化以形成栅极布线（121,123,125）。 栅极绝缘层（140）形成在栅极布线上。 非晶硅层（151,153）和电阻接触层（161,163,165）形成在栅绝缘层上。 在耐电接触层和栅极绝缘层上形成由钨构成的数据布线。 在数据布线上形成钝化层（180），包括接触孔（181,182,183,184）。 像素电极（190）形成在钝化层上，并通过接触孔与漏电极（175）电连接。

公开(公告)号：KR1020030084163A

公开(公告)日：2003-11-01

申请号：KR1020020022719

申请日：2002-04-25

Applicant: 삼성전자주식회사

Inventor： 정창오 ,  조범석 ,  이재갑 ,  강봉주 ,  홍성진 ,  양희정

IPC: H01L29/786

Abstract: PURPOSE: An interconnection, a fabricating method thereof, a thin film transistor array substrate including the same and a fabricating method therefor are provided to minimize signal delay and embody a liquid crystal display of a large area and high resolution by using as an interconnection a silver alloy including silver with the lowest resistivity. CONSTITUTION: A conductive material for a gate interconnection is stacked on a substrate and is patterned to the gate interconnection including a gate line and a gate electrode. A gate insulation layer is formed on the substrate. A semiconductor layer of silicon is formed on the gate insulation layer. A data line and a data interconnection including source and drain electrodes are formed on the semiconductor layer by using a thin film made of silver alloy. A passivation layer made of silicon oxide including the silicon diffused from the semiconductor layer is formed on the data interconnection.

Abstract translation: 目的：提供一种互连，其制造方法，包括该薄膜晶体管阵列基板的薄膜晶体管阵列基板及其制造方法，以使信号延迟最小化并且通过使用银互连形成大面积和高分辨率的液晶显示器 合金包括具有最低电阻率的银。 构成：用于栅极互连的导电材料层叠在基板上并且被图案化到包括栅极线和栅电极的栅极互连。 在基板上形成栅极绝缘层。 在栅极绝缘层上形成硅的半导体层。 通过使用由银合金制成的薄膜，在半导体层上形成包括源极和漏极的数据线和数据互连。 在数据互连上形成由包含从半导体层扩散的硅的氧化硅制成的钝化层。

公开(公告)号：KR1020030034820A

公开(公告)日：2003-05-09

申请号：KR1020010066575

申请日：2001-10-27

Applicant: 삼성전자주식회사

Inventor： 김상갑 ,  장용규 ,  홍문표 ,  정창오 ,  조범석

IPC: G02F1/1335

Abstract: PURPOSE: A reflective-transmissive liquid crystal display device and a method for manufacturing the same are provided to realize a high luminance display simultaneously having high light transmissivity and light reflexibility by optimizing the thickness of a reflective-transmissive electrode. CONSTITUTION: A thin film transistor is formed of a gate electrode(350), a source electrode(770), a drain electrode(760), and an active pattern(550) on a substrate(100). A passivation layer(900) is formed on the thin film transistor and the substrate, having a contact hole exposing the drain electrode. A transparent electrode(1000) is formed on the passivation layer to be connected with the drain electrode through the contact hole. A reflective-transmissive electrode(1100) is formed on the transparent electrode for reflecting light supplied in a direction forwarding the substrate while transmitting light supplied after passing through the substrate.

Abstract translation: 目的：提供反射透射型液晶显示装置及其制造方法，通过优化反射透射电极的厚度，实现同时具有高透光率和光反射性的高亮度显示。 构成：薄膜晶体管由衬底（100）上的栅电极（350），源电极（770），漏电极（760）和有源图案（550）形成。 钝化层（900）形成在薄膜晶体管和基板上，具有暴露漏电极的接触孔。 在钝化层上形成透明电极（1000），以通过接触孔与漏电极连接。 反射透射电极（1100）形成在透明电极上，用于反射在传送衬底的方向上提供的光，同时透射通过衬底之后提供的光。

公开(公告)号：KR1020020095541A

公开(公告)日：2002-12-27

申请号：KR1020010033584

申请日：2001-06-14

Applicant: 삼성전자주식회사

Inventor： 김상갑 ,  홍문표 ,  정창오 ,  장용규

IPC: G02F1/136

Abstract: PURPOSE: A transflective liquid crystal display device and a method for fabricating the same are provided to fabricate the LCD with four or five masks by improving the fabricating procedure and optimize the thickness of thin films for the reflection/transmission electrodes, thereby increasing the light efficiency and achieving the high luminance display. CONSTITUTION: A transflective liquid crystal display device includes thin film transistors formed in first areas of a first substrate(100) with gate electrodes, source electrodes(770), drain electrodes(760) and an active pattern, an organic insulating film(900) formed with contact holes for exposing the drain electrodes, transparent electrodes(1000) formed on a top surface of the organic insulating film to contact the drain electrodes, reflection/transmission electrodes(1100) formed on a top surface of the transparent electrodes for reflecting light supplied in the direction toward the first substrate and transmitting the light supplied via the first substrate, a second substrate having common electrodes facing the reflection/transmission electrodes of the first substrate, a liquid crystal layer implanted between the reflection/transmission electrodes and the common electrodes, and a light supplying unit mounted to a rear surface of the first substrate.

Abstract translation: 目的：提供一种半透射型液晶显示装置及其制造方法，通过改进制造步骤和优化反射/透射电极薄膜的厚度来制造具有四个或五个掩模的LCD，从而提高光效率 并实现高亮度显示。 构成：半透射型液晶显示装置包括形成在具有栅电极的第一基板（100）的第一区域中的薄膜晶体管，源电极（770），漏电极（760）和有源图案，有机绝缘膜（900） 形成有用于露出漏极的接触孔，形成在有机绝缘膜的顶表面上的透明电极（1000）以接触漏电极，形成在透明电极的顶表面上的反射/发射电极（1100）用于反射光 沿着朝向第一基板的方向供给并透射经由第一基板供给的光，具有与第一基板的反射/透射电极相对的公共电极的第二基板，注入在反射/透射电极和公共电极之间的液晶层 以及安装到第一基板的后表面的光供给单元。

公开(公告)号：KR1020020032213A

公开(公告)日：2002-05-03

申请号：KR1020000063246

申请日：2000-10-26

Applicant: 삼성전자주식회사

Inventor： 정창오 ,  사공동식 ,  김상갑

IPC: G02F1/136

Abstract: PURPOSE: A conducting line, a method of fabricating the line, a thin film transistor substrate including the conducting line and a method of fabricating the thin film transistor are provided to form a conducting line having excellent corrosion-resistance and low resistance. CONSTITUTION: A thin film transistor substrate includes an insulating substrate(10), a gate line(21,22,23) that is formed on the substrate and has a gate electrode, a gate insulating layer(30) formed on the gate lines, and a semiconductor layer(41) formed on the gate insulating layer. The substrate further includes a data line(61,62,63,64) that is formed on the data line and has source and drain electrodes, a passivation layer(70) having a contact hole(72) exposing the drain electrode, and a pixel electrode(80) connected to the drain electrode through the contact hole. At least one of the gate line and data line is formed of a silver thin film, and a silver alloy layer containing at least one alloy element is formed on the surface and interface of the line made of the silver thin film.

Abstract translation: 目的：提供导线，制造线的方法，包括导线的薄膜晶体管基板和制造薄膜晶体管的方法，以形成具有优异的耐腐蚀性和低电阻的导线。 构成：薄膜晶体管基板包括绝缘基板（10），形成在基板上并具有栅电极的栅极线（21,22,23），形成在栅极线上的栅绝缘层（30） 以及形成在所述栅极绝缘层上的半导体层（41）。 衬底还包括形成在数据线上并具有源极和漏极的数据线（61,62,63,64），具有暴露漏电极的接触孔（72）的钝化层（70）和 像素电极（80），其通过接触孔与漏电极连接。 栅极线和数据线中的至少一个由银薄膜形成，并且在由银薄膜制成的线的表面和界面上形成含有至少一个合金元素的银合金层。

公开(公告)号：KR1020010053695A

公开(公告)日：2001-07-02

申请号：KR1019990054163

申请日：1999-12-01

Applicant: 삼성전자주식회사

Inventor： 정창오

IPC: H01L27/01

Abstract: PURPOSE: A thin film transistor substrate and a fabrication method thereof are provided to reduce a resistance of an interconnect line and to provide a chemically stable interconnect line with a simple fabrication process. CONSTITUTION: Gate interconnect lines(20,21,22) comprising an Ag or an Ag alloy are formed on an insulation substrate. The gate interconnect line includes a number of gate lines(20) and a gate electrode(21) and a gate pad(22) transferring a scan signal from the external to the gate line. The gate interconnect lines are covered by a gate insulation film formed with SiNx. And, a semiconductor layer(40) is formed on the gate insulation film, and resistive contact layers are formed with a semiconductor like an amorphous silicon doped with an N type impurity like a P on the semiconductor layers. The resistive contact layers are for reducing a contact resistance between the semiconductor layers and a source/drain electrode(61,62). Data interconnect lines(60,61,62,63) are formed on the resistive contact layers and the gate insulation film. A protection film(70) is formed on the data interconnect lines and the semiconductor layer and the gate insulation film. The protection film has contact holes(71,72,73), and a pixel electrode(80) and a subsidiary gate pad(82) and a subsidiary data pad(83) are formed on the protection film. The pixel electrode is connected with the drain electrode through the contact hole(71), and the subsidiary gate pad and the subsidiary data pad are connected with the gate pad and the data pad through the contact holes(72,73) respectively.

Abstract translation: 目的：提供一种薄膜晶体管基板及其制造方法，以减少互连线的电阻并且通过简单的制造工艺提供化学稳定的互连线。 构成：在绝缘基板上形成包括Ag或Ag合金的栅极互连线（20,21,22）。 栅极互连线包括将扫描信号从外部传送到栅极线的多个栅极线（20）和栅电极（21）以及栅极焊盘（22）。 栅极互连线被由SiNx形成的栅极绝缘膜覆盖。 并且，在栅极绝缘膜上形成半导体层（40），并且在半导体层上形成有诸如P的N型杂质的非晶硅半导体的电阻性接触层。 电阻接触层用于减小半导体层与源极/漏极之间的接触电阻（61,62）。 数据互连线（60,61,62,63）形成在电阻接触层和栅极绝缘膜上。 在数据互连线和半导体层和栅极绝缘膜上形成保护膜（70）。 保护膜具有接触孔（71,72,73），并且在保护膜上形成像素电极（80）和辅助栅极焊盘（82）和辅助数据焊盘（83）。 像素电极通过接触孔（71）与漏电极连接，辅助栅极焊盘和辅助数据焊盘分别通过接触孔（72,73）与栅极焊盘和数据焊盘连接。

公开(公告)号：KR1020000033832A

公开(公告)日：2000-06-15

申请号：KR1019980050876

申请日：1998-11-26

Applicant: 삼성전자주식회사

Inventor： 정창오

IPC: H01L29/786

Abstract: PURPOSE: A manufacturing method of a polysilicon thin film transistor having a lightly doped drain(LDD) structure is provided to reduce steps of process and to manufacture a polysilicon thin film transistor by implantation of a low energy ion and a low heat treatment. CONSTITUTION: After a buffer layer is formed on a substrate(10), a polysilicon pattern(20) and a gate oxide layer(30) are successively formed on the substrate(10). A gate electrode(40) is then formed on the gate oxide layer(30), and n-type dopant is lightly doped into the polysilicon pattern(20) to define LDD regions(230). Next, a dielectric layer(60) is deposited and contact holes(610) are formed in both layers(30,60) to expose a portion of the LDD regions(230). High-concentrated n-type dopant is further doped by using the dielectric layer(60) as a mask, and actuated by heat treatment, so that a source region(210) and a drain region(220) are defined. After that, a source electrode, a drain electrode, and a protective layer are formed. Finally, a pixel electrode is formed to contact with the drain electrode.

Abstract translation: 目的：提供具有轻掺杂漏极（LDD）结构的多晶硅薄膜晶体管的制造方法，以通过注入低能离子和低热处理来减少工艺步骤和制造多晶硅薄膜晶体管。 构成：在衬底（10）上形成缓冲层之后，在衬底（10）上依次形成多晶硅图案（20）和栅氧化层（30）。 然后在栅极氧化物层（30）上形成栅电极（40），并且将n型掺杂剂轻掺杂到多晶硅图案（20）中以限定LDD区域（230）。 接下来，沉积电介质层（60），并在两层（30,60）中形成接触孔（610），以露出LDD区域（230）的一部分。 通过使用介电层（60）作为掩模来进一步掺杂高浓度的n型掺杂剂，并通过热处理致动，从而限定源极区（210）和漏极区（220）。 之后，形成源电极，漏电极和保护层。 最后，形成与漏电极接触的像素电极。