公开(公告)号：KR100790216B1

公开(公告)日：2008-01-02

申请号：KR1020060100726

申请日：2006-10-17

Applicant: 삼성전자주식회사

Inventor： 윤선미 ,  최재영 ,  이동기 ,  최성재 ,  신현진

IPC: G02F1/13 ,  B82Y40/00

CPC classification number: H01J9/02 ,  B82Y10/00 ,  G02F1/13439 ,  H01B1/127 ,  H01B1/24 ,  H01J1/02

Abstract: A transparent CNT(carbon nanotube) electrode using a conductive dispersant and a method of preparing the same are provided to remarkably improve the conductivity of a CNT thin film by using a doped dispersant. A CNT thin film layer(20) is formed on a transparent substrate(10). The CNT thin film layer includes a CNT(21) and a doped dispersant(22). The transparent substrate is a transparent inorganic substrate containing glass and quartz or a flexible transparent substrate selected from the group consisting of polyethylene terephthalate, polyethylene naphthalate, polyethylene sulfone, polycarbonate, polystyrene, polypropylene, polyester, polyimide, polyetheretherketon, polyetherimide, an acryl resin, an olefin maleimide copolymer, and a norbornene based resin. The CNT is at least one selected from the group consisting of a single-walled carbon nanotube, a double-walled carbon nanotube, a multi-walled carbon nanotube, and a rope carbon nanotube.

Abstract translation: 提供使用导电分散剂的透明CNT（碳纳米管）电极及其制备方法，通过使用掺杂的分散剂显着地提高CNT薄膜的导电性。 在透明基板（10）上形成CNT薄膜层（20）。 CNT薄膜层包括CNT（21）和掺杂分散剂（22）。 透明基材是含有玻璃和石英的透明无机基材或选自聚对苯二甲酸乙二醇酯，聚萘二甲酸乙二醇酯，聚乙烯砜，聚碳酸酯，聚苯乙烯，聚丙烯，聚酯，聚酰亚胺，聚醚醚酮，聚醚酰亚胺，丙烯酸树脂， 烯烃马来酰亚胺共聚物和降冰片烯系树脂。 CNT是选自单壁碳纳米管，双壁碳纳米管，多壁碳纳米管和绳状碳纳米管中的至少一种。

公开(公告)号：KR1020070089586A

公开(公告)日：2007-08-31

申请号：KR1020060126409

申请日：2006-12-12

Applicant: 삼성전자주식회사

Inventor： 최성재 ,  설광수 ,  최재영 ,  이동기 ,  윤선미

IPC: H01L21/8247 ,  B82Y10/00

Abstract: A method for manufacturing a memory device with a nano crystal and the memory device manufactured thereby are provided to improve the controllability of device characteristics and to enhance device characteristics by arranging uniformly nano crystals in a single layer due to an electrostatic attractive force using a polymer electrolyte layer formed on a tunneling oxide layer. At least one tunneling oxide layer(21) is formed on a substrate(11). A polymer electrolyte layer is formed on the tunneling oxide layer. A plurality of nano crystals are uniformly arranged on the polymer electrolyte layer. A control oxide layer(25) is formed on the resultant structure. Source and drain regions are formed in the substrate and a control gate is formed on the control oxide layer. The tunneling oxide layer consists of first and second tunneling oxide layers.

Abstract translation: 提供一种用于制造具有纳米晶体的存储器件及其制造的存储器件的方法，以通过使用聚合物电解质由于静电引力而使均匀的纳米晶体排列在单层中，从而提高器件特性的可控性和提高器件特性 层形成在隧道氧化物层上。 在基板（11）上形成至少一个隧道氧化物层（21）。 在隧道氧化物层上形成聚合物电解质层。 多个纳米晶体均匀地排列在聚合物电解质层上。 在所得结构上形成控制氧化物层（25）。 源极和漏极区域形成在衬底中，并且控制栅极形成在控制氧化物层上。 隧穿氧化层由第一和第二隧道氧化物层组成。

公开(公告)号：KR1020070089369A

公开(公告)日：2007-08-31

申请号：KR1020060019301

申请日：2006-02-28

Applicant: 삼성전자주식회사

Inventor： 설광수 ,  최성재 ,  최재영 ,  민요셉 ,  장은주 ,  이동기

IPC: H01L21/336

CPC classification number: H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/51 ,  H01L29/513 ,  H01L29/7881 ,  Y10S977/721 ,  Y10S977/785 ,  Y10S977/943

Abstract: A memory device with a nano crystal and a manufacturing method thereof are provided to improve controllability of device characteristics and to enhance the device characteristics by arranging uniformly nano crystals using a tunneling oxide layer structure for introducing an aminosilane layer. A memory device with a nano crystal includes a substrate(11), source and drain regions(13,15) spaced apart from each other in the substrate, a memory cell, and a control gate. The memory cell(22) is formed on the substrate in order to connect the source and drain regions with each other. The memory cell contains a plurality of nano crystals. The control gate(17) is formed on the memory cell. The memory cell includes a first tunneling oxide layer(21) on the substrate, a second tunneling oxide layer(23) on the first tunneling oxide layer, and a control oxide layer(25) on the second tunneling oxide layer. An aminosilane layer is additionally formed on the second tunneling oxide layer.

Abstract translation: 提供具有纳米晶体的存储器件及其制造方法，以通过使用用于引入氨基硅烷层的隧穿氧化物层结构来均匀地布置纳米晶体来提高器件特性的可控性并提高器件特性。 具有纳米晶体的存储器件包括衬底（11），在衬底中彼此间隔开的源极和漏极区域（13,15），存储器单元和控制栅极。 存储单元（22）形成在基板上，以便将源区和漏区彼此连接。 存储单元包含多个纳米晶体。 控制栅极（17）形成在存储单元上。 所述存储单元包括在所述衬底上的第一隧道氧化物层（21），所述第一隧道氧化物层上的第二隧道氧化物层（23）和所述第二隧穿氧化物层上的控制氧化物层（25）。 另外在第二隧道氧化物层上形成氨基硅烷层。

公开(公告)号：KR100736521B1

公开(公告)日：2007-07-06

申请号：KR1020040042200

申请日：2004-06-09

Applicant: 삼성전자주식회사

Inventor： 전신애 ,  장은주 ,  이성훈 ,  안태경 ,  최성재

IPC: C09K11/06 ,  B82B3/00

CPC classification number: H05B33/14 ,  B82Y20/00 ,  C09K11/08 ,  H01L33/08 ,  H01L33/24 ,  H01L51/5048 ,  Y10S977/779

Abstract: 본 발명은 고분자 정공수송층과 유기물 전자수송층 사이에 독립적으로 분리된 나노결정 발광층을 포함하는 나노 결정 전기발광 소자 및 그의 제조방법에 관한 것으로, 본 발명의 나노 결정 전기발광 소자는 정공수송층과 나노결정 발광층 및 전자수송층이 완전히 분리되어, 전기발광 소자가 전압 등의 구동 조건에 영향을 거의 받지 않고, 기타의 유기층 발광을 최대 억제한 순수한 나노결정의 전기 발광 스펙트럼을 제공하는 이점을 갖는다.

전기발광 소자, 정공수송층, 전자수송층, 나노결정 발광층, 양극, 음극, 정공억제층

公开(公告)号：KR1020050112938A

公开(公告)日：2005-12-01

申请号：KR1020040038391

申请日：2004-05-28

Applicant: 삼성전자주식회사

Inventor： 이성훈 ,  전신애 ,  장은주 ,  박종진 ,  안태경 ,  최성재

IPC: H01L21/20 ,  H01L33/00 ,  B82Y40/00

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/565 ,  C09K11/62 ,  C09K11/621 ,  C09K11/64 ,  C09K11/661 ,  C09K11/70 ,  C09K11/7492 ,  C09K11/88 ,  C09K11/883 ,  C09K11/892 ,  C30B7/14 ,  C30B29/48 ,  F21V9/30 ,  G02B6/005 ,  G02F2001/133614 ,  H01L51/5012 ,  H01L51/502 ,  H01L51/504 ,  H05B33/14 ,  Y10T428/256

Abstract: A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.

Abstract translation: 一种制备多层纳米晶体的方法。 该方法包括以下步骤：（i）将由光敏化合物表面配位的纳米晶体，或由与感光性化合物混合的材料表面配位的感光性化合物和纳米晶体的混合溶液涂布在基材上，干燥被覆基材， 并将干燥的底物暴露于UV光以形成第一单层纳米晶体，和（ii）重复步骤（i）的步骤以在纳米晶体的第一单层上形成一个或多个纳米晶体单层。 此外，使用通过该方法制备的多层纳米晶体作为发光层的有机 - 无机混合电致发光器件。 可以提高电致发光器件的发光效率和发光强度，并且可以通过使用多层纳米晶体作为发光层来控制电致发光器件的电性能。