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公开(公告)号：KR101359350B1
公开(公告)日：2014-02-11
申请号：KR1020110093075
申请日：2011-09-15
Applicant: 전자부품연구원
IPC: C09K5/00 , C08L101/12 , C08J3/12
Abstract: 본 발명은 열전도소재를 개시한다. 본 발명의 일 측면에 따르면, 실리콘 수지, 우레탄 수지, 아크릴 수지 또는 스타이렌 수지로 형성되는 탄성입자; 및 상기 탄성입자의 표면에 결합하는 열전도성 입자;를 포함하는 열전도 소재가 제공된다.
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公开(公告)号：KR1020130074622A
公开(公告)日：2013-07-04
申请号：KR1020110142764
申请日：2011-12-26
Applicant: 전자부품연구원
IPC: G02F1/01
CPC classification number: G02F1/0102 , G02F1/15 , G02F2001/1515 , G02F2202/14
Abstract: PURPOSE: A transparency display panel including a photochromic material layer is provided to allow a coating with photochromic materials on the upper part of a second electrode, thereby omitting a passivation process and redirection process of forming electrode between a light emitting layer and photochromic material layer. CONSTITUTION: A transparent display panel (100) comprises a first electrode, a second electrode (120,140) and a light emitting layer (130). The first electrode and second electrode are laminated on a transparent substrate (110). The light emitting layer is equipped between the first electrode and second electrode. A photochromic material layer (150) is coated on the top of the second electrode and includes photochromic materials.
Abstract translation: 目的：提供包括光致变色材料层的透明度显示面板，以在第二电极的上部涂覆光致变色材料，从而省略了在发光层和光致变色材料层之间形成电极的钝化处理和重定向过程。 构成：透明显示面板（100）包括第一电极，第二电极（120,140）和发光层（130）。 第一电极和第二电极层叠在透明基板（110）上。 发光层配置在第一电极和第二电极之间。 光致变色材料层（150）涂覆在第二电极的顶部，并包括光致变色材料。
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公开(公告)号：KR101240292B1
公开(公告)日：2013-03-11
申请号：KR1020110146533
申请日：2011-12-29
Applicant: 전자부품연구원
Abstract: PURPOSE: A supporting structure for a flexible substrate and a flexible substrate supporting method are provided to easily attach and detach the flexible substrate by using a supporting unit which is divided into a plurality of parts. CONSTITUTION: A support layer(120) is formed on an elastic layer(110). The support layer is formed to be separated into multiple support units(121) as the elastic layer extends and shrinks. The support layer supports a flexible substrate(10). The elastic layer is formed to be extended and shrunk in a transverse direction. The multiple support units are formed to be separated in a transverse direction as the elastic layer extends and shrinks in a transverse direction.
Abstract translation: 目的：提供一种用于柔性基板的支撑结构和柔性基板支撑方法，通过使用被分成多个部分的支撑单元来容易地附接和分离柔性基板。 构成：在弹性层（110）上形成支撑层（120）。 当弹性层延伸和收缩时，支撑层形成为分离成多个支撑单元（121）。 支撑层支撑柔性基板（10）。 弹性层形成为沿横向延伸和收缩。 当弹性层沿横向延伸并收缩时，多个支撑单元形成为在横向上分离。
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公开(公告)号：KR1020120131674A
公开(公告)日：2012-12-05
申请号：KR1020110050014
申请日：2011-05-26
Applicant: 전자부품연구원
IPC: H01L31/115
CPC classification number: H01L31/115 , H01L27/14676 , H01L31/085
Abstract: PURPOSE: A thin film transistor array panel for an X-ray detector and a method for manufacturing a thin film transistor on a substrate are provided to simplify a process and stably drive a device by applying a device of a top gate structure to a TFT backplane panel. CONSTITUTION: A thin film transistor(120) has a top gate structure and is formed in each pixel region defined on a base substrate(110). The thin film transistor includes a source electrode(122B) and a drain electrode(122A) formed on the same layer as the source electrode. A photoelectric conversion device(140) is electrically connected to the thin film transistor. The photoelectric conversion device includes a pixel electrode(142), a photoconductor layer(144), and a bias electrode(146).
Abstract translation: 目的：提供一种用于X射线检测器的薄膜晶体管阵列面板和用于在衬底上制造薄膜晶体管的方法，以通过将顶栅结构的器件施加到TFT背板来简化工艺并稳定地驱动器件 面板。 构成：薄膜晶体管（120）具有顶栅结构并且形成在限定在基底（110）上的每个像素区域中。 该薄膜晶体管包括与源电极形成在同一层上的源电极（122B）和漏电极（122A）。 光电转换装置（140）与薄膜晶体管电连接。 光电转换装置包括像素电极（142），光电导体层（144）和偏置电极（146）。
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公开(公告)号：KR101199289B1
公开(公告)日：2012-11-09
申请号：KR1020110045575
申请日：2011-05-16
Applicant: 전자부품연구원 , 엘에스전선 주식회사
Abstract: PURPOSE: A polymer composite is provided to remove a space charge generated in an insulating material of a high voltage direct current cable for power transmission by comprising a partially reduced material of a graphene oxide. CONSTITUTION: A polymer composite comprises a graphene oxide partially reduced by 80-0.01%. The comprised amount of the partially reduced material of graphene oxide is 0.01-50 weight%. The size of the partially reduced material of graphene oxide is 15 um or less. A manufacturing method of the partially reduced material of graphene oxide is 15 um or less. A manufacturing method of the polymer composite comprises a step(S20) of manufacturing the partially reduced material of graphene oxide by partially reducing graphene oxide; a step(S30) of manufacturing a polymer composite comprising the partially reduced material. [Reference numerals] (AA) Start; (BB) Finish; (S10) Manufacturing graphene oxide; (S20) Partial reduction graphene oxide; (S30) Manufacturing polymer composite by graphene oxide comprising partial reduced material
Abstract translation: 目的：提供一种聚合物复合材料，用于通过包括氧化石墨烯的部分还原的材料去除用于动力传递的高压直流电缆的绝缘材料中产生的空间电荷。 构成：聚合物复合材料包含部分减少80-0.01％的石墨烯氧化物。 氧化石墨烯的部分还原材料的含量为0.01-50重量％。 石墨烯氧化物的部分还原材料的尺寸为15μm或更小。 石墨烯氧化物的部分还原材料的制造方法为15μm以下。 聚合物复合材料的制造方法包括通过部分还原石墨烯氧化物制造氧化石墨烯的部分还原材料的步骤（S20） 制造包含部分还原材料的聚合物复合材料的步骤（S30）。 （附图标记）（AA）开始; （BB）完成; （S10）制造氧化石墨烯; （S20）部分还原石墨烯氧化物; （S30）通过包含部分还原材料的氧化石墨烯制造聚合物复合材料
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Patent Agency Ranking
公开(公告)号：KR1020120084107A
公开(公告)日：2012-07-27
申请号：KR1020110005434
申请日：2011-01-19
Applicant: 전자부품연구원
IPC: H01L29/786 , H01L21/336 , G02F1/136
CPC classification number: H01L29/66742 , H01L29/45 , H01L29/7869
Abstract: PURPOSE: A method of manufacturing oxide semiconductor thin film transistor and semiconductor equipment are provided to reduce a contact resistance between source and drain semiconductor channel layers by using air pressure plasma processing. CONSTITUTION: A gate insulating film(114) where a channel layer(116) composed of an oxide semiconductor is formed is made on a substrate to cover a gate electrode. The surface of a generated channel layer is processed with use of air pressure plasma. A source and drain electrodes are respectively formed on both sides of the surface processed channel layer. A protective film(120) covering the generated source and drain electrodes and channel layer is formed.
Abstract translation: 目的：提供一种制造氧化物半导体薄膜晶体管和半导体设备的方法，以通过使用气压等离子体处理来降低源极和漏极半导体沟道层之间的接触电阻。 构成：在衬底上形成由氧化物半导体构成的沟道层（116）的栅极绝缘膜（114），以覆盖栅电极。 使用空气压力等离子体处理产生的通道层的表面。 源极和漏极分别形成在表面处理沟道层的两侧。 形成覆盖所产生的源极和漏极以及沟道层的保护膜（120）。
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公开(公告)号：KR101114425B1
公开(公告)日：2012-03-05
申请号：KR1020090128729
申请日：2009-12-22
Applicant: 전자부품연구원 , 엘에스전선 주식회사
Abstract: 본발명은표면입자뭉침이제거된나노복합입자체및 그제조방법에 관한것으로, 보다상세하게는모입자인고분자입자와자입자인나노입자를포함하는건식복합체에있어서, 상기건식복합체를용액에분산시켜건식복합체의표면에뭉쳐있는나노입자를용해시켜제거하여나노복합입자체를제조하고, 상기나노복합입자체에나노입자를추가로투입하여두 번째건식복합체를제조한후, 다시상기두 번째건식복합체를용액에분산시켜두 번째건식복합체의표면에뭉쳐있는나노입자를용해시켜제거한고입자분율을가지는것을특징으로하는나노복합입자체에관한것이다.
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公开(公告)号：KR101093613B1
公开(公告)日：2011-12-15
申请号：KR1020090070327
申请日：2009-07-31
Applicant: 전자부품연구원
Abstract: 다양한 분야에 사용가능한 MgO 쉘 구조체를 제조할 수 있는 MgO 쉘 구조체 제조 방법이 제안된다. 제안된 MgO 쉘 구조체 제조 방법에서는 고분자 입자 및 나노미터 수준의 MgO 입자를 혼성화하고, 혼성화된 입자에 Mg(OH)
2 를 형성하기 위하여 수화시킨 후, 수화된 입자를 소성하여 MgO 쉘 구조체를 제조한다.
MgO 입자, 고분자, 쉘-
公开(公告)号：KR101043949B1
公开(公告)日：2011-06-24
申请号：KR1020090033841
申请日：2009-04-17
Applicant: 전자부품연구원
IPC: G02F1/167 , G02F1/13357
CPC classification number: G02F1/133615 , G02F1/167 , G02F2001/133601 , G02F2203/02 , G09G3/3426 , G09G2310/024
Abstract: 로컬디밍구동 및 스캐닝 구동이 가능하고, 저비용의 광원도 사용할 수 있는 초박형 에지타입 백라이트 유닛 및 우수한 화면품질을 갖는 소형 디스플레이 장치가 제안된다. 제안된 백라이트 유닛은 도광판, 도광판의 측면에 위치하는 광원 및 광원으로부터 조사된 광이 추출되는 면의 반대면에 위치하는 반사형 디스플레이 패널을 포함한다.
백라이트 유닛, 반사형 디스플레이 패널, 전자종이 -
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