公开(公告)号：KR100989117B1

公开(公告)日：2010-10-20

申请号：KR1020080097419

申请日：2008-10-02

Applicant: 제일모직주식회사

Inventor： 우창수 ,  김희재 ,  이성재 ,  윤상근 ,  김태호

IPC: C08L83/00 ,  C08K5/095

CPC classification number: C08L83/04 ,  C08G77/045 ,  C08G77/12 ,  C08G77/70

Abstract: 본 발명은 반도체 캐패시터(capacitor) 제조용 노드분리 공정에 사용될 수 있는 실리콘 조성물의 말단기 보호(end-capping)를 통하여 보관안정성을 향상시키는 반도체 미세 갭 필용 조성물에 관한 것으로서, 본 발명에 의하여 보관일수에 따라 분자량이 변하지 않을 뿐만 아니라, 알칼리를 띄는 현상액에 원하는 현상속도(DR; dissolution rate)로 녹아 나오는 동시에, 보관일수에 따라 그 현상속도가 크게 변하지 않는 보관안정성이 우수한 반도체 미세 갭 필용 조성물을 제공한다.
캐패시터, 실리콘, 말단기 보호, 현상속도, 보관안정성

公开(公告)号：KR1020080014388A

公开(公告)日：2008-02-14

申请号：KR1020060076027

申请日：2006-08-11

Applicant: 제일모직주식회사

Inventor： 김희재 ,  김상균 ,  어동선 ,  우창수 ,  윤상근 ,  이성재 ,  유용식 ,  김태호

IPC: G03F7/004 ,  G03F7/00 ,  G03F1/38 ,  G03F7/11

CPC classification number: G03F7/40 ,  H01L21/0273 ,  G03F7/11 ,  G03F7/091

Abstract: A resin composition for hard mask, a method for preparing a semiconductor device by using the composition, and a semiconductor device prepared by the method are provided to reduce the area of a photoresist pattern in intaglio in photolithographic process. A resin composition comprises a polymer containing an aromatic ring; and water or a mixture solvent comprising water and a water-soluble solvent as a solvent, wherein the aromatic ring is substituted with a water-soluble substituent. The composition is coated on a photoresist pattern to form a coating layer, the water-soluble substituent is removed by an acid catalyst supplied from the photoresist, thereby forming an insoluble region on the coating layer. Preferably the polymer is a homopolymer or copolymer of a novolac, hydroxy styrene-based, naphthol-based monomer, or their mixture.

Abstract translation: 提供一种用于硬掩模的树脂组合物，通过使用该组合物制备半导体器件的方法以及通过该方法制备的半导体器件，以在光刻工艺中减少光刻胶图案在凹版中的面积。 树脂组合物包含含有芳环的聚合物; 和水或包含水和水溶性溶剂作为溶剂的混合溶剂，其中所述芳环被水溶性取代基取代。 将组合物涂布在光致抗蚀剂图案上以形成涂层，通过由光致抗蚀剂提供的酸催化剂除去水溶性取代基，从而在涂层上形成不溶性区域。 优选地，聚合物是酚醛清漆，羟基苯乙烯基，萘酚基单体或其混合物的均聚物或共聚物。

公开(公告)号：KR100737851B1

公开(公告)日：2007-07-12

申请号：KR1020060064084

申请日：2006-07-07

Applicant: 제일모직주식회사

Inventor： 유용식 ,  어동선 ,  김희재 ,  우창수 ,  윤상근

IPC: C08L21/00 ,  C08L33/00 ,  C08K5/05

Abstract: Provided is a resin composition for forming a micropattern, which reduces the area or interval in an engraved portion of a photoresist layer during a semiconductor lithography process, and allows formation of a fine pattern beyond a wavelength limit. The resin composition(4) for forming a micropattern by being coated on a photoresist pattern layer comprises an aqueous solution containing an alcohol or alkali, and a water soluble polymer. The resin composition causes surface swelling of the photoresist pattern layer(3) or formation of entanglement between the photoresist pattern layer(3) and the water soluble polymer. Particularly, the water soluble polymer includes a homopolymer comprising hydrophilic monomer units or a copolymer of at least two hydrophilic monomer units. The resin composition comprises 50-99 wt% of the alcohol- or alkali-containing aqueous solution and 1-50 wt% of the water soluble polymer.

Abstract translation: 本发明提供一种用于形成微细图案的树脂组合物，其在半导体光刻工艺期间减小光致抗蚀剂层的雕刻部分中的面积或间隔，并且允许形成超过波长限制的精细图案。 通过涂布在光致抗蚀剂图案层上形成微图案的树脂组合物（4）包含含有醇或碱的水溶液和水溶性聚合物。 树脂组合物引起光致抗蚀剂图案层（3）的表面溶胀或在光致抗蚀剂图案层（3）与水溶性聚合物之间形成缠结。 特别地，水溶性聚合物包括含有亲水性单体单元的均聚物或至少两种亲水性单体单元的共聚物。 该树脂组合物包含50-99重量％的含醇或碱的水溶液和1-50重量％的水溶性聚合物。