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公开(公告)号：KR1020020044888A
公开(公告)日：2002-06-19
申请号：KR1020000074135
申请日：2000-12-07
Applicant: 한국과학기술연구원
IPC: H01H1/02
Abstract: PURPOSE: A copper-chromium contact material for a vacuum switch and a manufacturing method thereof are provided to manufacture a wholesome Cu-Cr contact material by including a uniform and dispersed sintering structure of Cr particle in Cu matrix. CONSTITUTION: A mixing powder of a copper(Cu) powder and a chromium(Cr) powder is put and pressurized in a mold to manufacture a molding material. A content of the chromium(Cr) ranges 25-75 weight %. The molding material is sintered to a solid status at a temperature lower than a melting point of the copper to obtain a solid-phase sintered body. The temperature lower than a melting point of the copper ranges 900-1075°C. The solid-phase sintered body is heated to a temperature higher than the melting point of the copper to perform a liquid-phase sintering operation. The temperature higher than a melting point of the copper ranges 1100-1250°C.
Abstract translation: 目的：提供一种用于真空开关的铜 - 铬接触材料及其制造方法，通过在Cu基体中包含均匀分散的Cr颗粒的烧结结构来制造有益的Cu-Cr接触材料。 构成：将铜（Cu）粉末和铬（Cr）粉末的混合粉末在模具中加压并制造成型材料。 铬（Cr）的含量范围为25-75重量％。 将模塑材料在低于铜的熔点的温度下烧结成固体状态以获得固相烧结体。 低于铜熔点的温度范围为900-1075℃。 将固相烧结体加热到比铜的熔点高的温度，进行液相烧结操作。 高于铜熔点的温度范围为1100-1250℃。
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公开(公告)号：KR100217032B1
公开(公告)日：1999-09-01
申请号：KR1019970024736
申请日：1997-06-14
Applicant: 한국과학기술연구원
IPC: C22C1/04
CPC classification number: B22F3/225 , B22F2998/00 , B22F2998/10 , C22C1/045 , H01L23/3736 , H01L2924/0002 , B22F1/025 , B22F3/22 , B22F3/26 , H01L2924/00
Abstract: 본 발명은, 액상 소결시 생길 수 있는 성형체의 불균일한 수축을 없애고, 저비용으로 단순히 텅스텐 분말만을 사출 성형함으로써, 텅스텐 골격 구조 및 상기 골격 구조를 포함하는 텅스텐-구리 복합 재료를 제공하기 위하여, 크기가 2 내지 5㎛이고 중량 퍼센트로 99.9 이상의 순도를 갖는 텅스텐 분말 표면을 중량 퍼센트로 0.06(600ppm)
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