公开(公告)号：KR1020110022453A

公开(公告)日：2011-03-07

申请号：KR1020090080058

申请日：2009-08-27

Applicant: 한국산업기술대학교산학협력단

Inventor： 남옥현 ,  유근호

IPC: H01L33/02

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/16

Abstract: PURPOSE: A high quality non-polar/antipolarity semiconductor device and a manufacturing method thereof are provided to improve the crystalline quality by reducing the defect of the template layer by forming the template layer on the sapphire crystal side etched in the uneven structure pattern. CONSTITUTION: A sapphire substrate(110) is etched to form the uneven structure pattern. The template layer(120) is formed on the sapphire substrate on which the uneven structure pattern is formed. The template layer comprises the nitride semiconductor layer and the GaN layer. A light emission diode layer(130) is formed on the template layer.

Abstract translation: 目的：提供高质量的非极性/反极性半导体器件及其制造方法，以通过在以不均匀结构图案蚀刻的蓝宝石晶体侧上形成模板层来减小模板层的缺陷来提高晶体质量。 构成：蚀刻蓝宝石衬底（110）以形成不均匀结构图案。 模板层（120）形成在其上形成有不均匀结构图案的蓝宝石衬底上。 模板层包括氮化物半导体层和GaN层。 在模板层上形成发光二极管层（130）。

公开(公告)号：KR1020110022451A

公开(公告)日：2011-03-07

申请号：KR1020090080056

申请日：2009-08-27

Applicant: 한국산업기술대학교산학협력단

Inventor： 남옥현 ,  장종진 ,  이성남

IPC: H01L33/12

Abstract: PURPOSE: A high quality non-polar/antipolarity semiconductor device and a manufacturing method thereof are provided to reduce the defect of a template layer and improve the crystalline quality by forming the template layer as a double buffer layer. CONSTITUTION: A sapphire substrate(110) comprises a crystal plane for the growth of non-polar or the antipolarity nitride semiconductor layer. A template layer(120) is formed on the sapphire substrate. The template layer comprises a low temperature buffer layer(121) and a high temperature buffer layer(122). The high temperature buffer layer is formed at the temperature higher than the formation temperature of the low temperature buffer layer.

Abstract translation: 目的：提供高质量的非极性/反极性半导体器件及其制造方法，以通过将模板层形成为双缓冲层来减少模板层的缺陷并提高结晶质量。 构成：蓝宝石衬底（110）包括用于生长非极性或反极性氮化物半导体层的晶面。 在蓝宝石衬底上形成模板层（120）。 模板层包括低温缓冲层（121）和高温缓冲层（122）。 在比低温缓冲层的形成温度高的温度下形成高温缓冲层。