公开(公告)号：KR101392935B1

公开(公告)日：2014-05-12

申请号：KR1020120124609

申请日：2012-11-06

Applicant: 한국에너지기술연구원

Inventor： 윤석구 ,  윤경훈 ,  박정재 ,  김도연 ,  이종건 ,  곽지혜 ,  윤재호 ,  안세진 ,  조아라 ,  신기식

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022425 ,  B05B12/29 ,  Y02E10/50

Abstract: The present invention relates to a method of manufacturing a grid electrode for a solar cell and, more specifically, to a method of manufacturing a grid electrode to be used as a front electrode for a solar cell. The method includes: a step of preparing electrode metal powder; and a step of spraying aerosol including the metal powder onto a slit formed on a mask. As the sprayed aerosol generates a vortex inside the slit, the metal powder included in the aerosol forms an electrode having a triangular cross section. Since the aspect ratio is greater than 0.3 and the cross section has a triangular shape, the present invention is able to reduce resistance of the electrode due to the increase of the cross section and minimize reduction of efficiency due to the shadow of the grid electrode. Since the present invention uses inexpensive copper during a process of manufacturing a grid electrode without a separate process or device for sintering copper powder, it is possible to make the process of manufacturing a grid electrode simple and inexpensive.

Abstract translation: 本发明涉及一种制造太阳能电池用栅极电极的方法，更具体地，涉及一种制造用作太阳能电池的前电极的栅电极的方法。 该方法包括：制备电极金属粉末的步骤; 以及将包含金属粉末的气溶胶喷雾到形成在掩模上的狭缝上的步骤。 当喷雾的气溶胶在狭缝内产生漩涡时，包含在气溶胶中的金属粉末形成具有三角形截面的电极。 由于纵横比大于0.3且横截面为三角形状，所以本发明能够降低由于横截面的增大导致的电极的电阻，并且由于栅电极的阴影而使效率的降低最小化。 由于本发明在制造栅格电极的过程中使用便宜的铜，而没有单独的工艺或用于烧结铜粉的装置，所以可以使制造栅电极的工艺简单且便宜。

公开(公告)号：KR1020140021971A

公开(公告)日：2014-02-21

申请号：KR1020130094089

申请日：2013-08-08

Applicant: 한국에너지기술연구원

Inventor： 안승규 ,  윤경훈 ,  윤재호 ,  조준식 ,  안세진 ,  곽지혜 ,  신기식 ,  박상현 ,  박주형 ,  어영주 ,  유진수 ,  조아라

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  H01L31/03928 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: The present invention relates to a flexible substrate CIGS solar cell in which a Na supply method is improved. The flexible substrate CIGS solar cell is made of; a substrate of a flexible material; a back side electrode formed on the substrate; a CIGS light absorption layer formed on the back side electrode; a buffer layer formed on the CIGS light absorption layer, and a front side electrode formed on the buffer layer. The back side electrode is a Na added Mo electrode layer which is made of a single layer. The present invention applies the Na added Mo electrode layer which shows low specific resistance of 1/10 than an existing Na added Mo electrode layer and provides a flexible substrate CIGS solar cell of high efficiency which forms a back side electrode into a signal layer. Also, a process which forms a back side electrode is formed of a process which forms the Na added Mo electrode layer of the single layer only. Therefore, a manufacturing process and manufacturing costs of the flexible substrate CIGS solar cell are reduced. Furthermore, the present invention comprises a process of eliminating a Na compound formed on the surface while a Na added metal layer is exposed to air and solves a problem in which a light absorption layer is separated or the conversion efficiency of a solar cell is reduced.

Abstract translation: 本发明涉及一种其中提供Na供应方法的柔性基板CIGS太阳能电池。 柔性基板CIGS太阳能电池由...制成; 柔性材料的基材; 形成在所述基板上的背面电极; 形成在背面电极上的CIGS光吸收层; 形成在CIGS光吸收层上的缓冲层和形成在缓冲层上的前侧电极。 背面电极是由单层制成的Na添加的Mo电极层。 本发明应用与现有的Na添加的Mo电极层相比低电阻率为1/10的Na添加Mo电极层，并且提供高效率的柔性衬底CIGS太阳能电池，其形成信号层中的背面电极。 此外，形成背面电极的工艺由仅形成单层的Na添加Mo电极层的工艺形成。 因此，柔性基板CIGS太阳能电池的制造工艺和制造成本降低。 此外，本发明包括在Na添加金属层暴露于空气中时除去形成在表面上的Na化合物的方法，并且解决了分离光吸收层或太阳能电池的转换效率降低的问题。

公开(公告)号：KR1020130089350A

公开(公告)日：2013-08-12

申请号：KR1020120010638

申请日：2012-02-02

Applicant: 한국에너지기술연구원

Inventor： 어영주 ,  윤경훈 ,  윤재호 ,  신기식 ,  곽지혜 ,  안세진 ,  안승규 ,  조준식 ,  유진수 ,  조아라 ,  박상현 ,  박주형

IPC: H01L31/0749 ,  H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0326 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A method for manufacturing a CI(G)S-based thin film for a solar cell by using flux with a low melting point and the CI(G)S-based thin film manufactured by the same are provided to reduce manufacturing costs by selenization at low temperatures. CONSTITUTION: CI(G)S-based nanoparticles are manufactured. The CI(G)S-based nanoparticles and slurry including flux with a melting point between 30 and 400 degrees centigrade are manufactured. A CI(G)S-based precursor thin film is formed by coating the slurry on a substrate without a vibration. The CI(G)S-based precursor thin film is dried. The CI(G)S-based precursor thin film is selenized by using selenium steam. [Reference numerals] (AA) Start; (BB) Manufacture CI(G)S nanoparticles; (CC) Manufacture slurry; (DD) Non-vibration coating; (EE) Dry; (FF) Selenization and thermal process; (GG) Step a; (HH) Step b; (II) Step c; (JJ) Step d; (KK) Step e; (LL) End

Abstract translation: 目的：通过使用低熔点的助熔剂和其制造的CI（G）S系薄膜，制造用于太阳能电池的CI（G）S系薄膜的方法，以降低制造成本 低温硒化。 构成：制造CI（G）S基纳米粒子。 制造了CI（G）S型纳米粒子和包含熔点在30-400摄氏度之间的焊剂的浆料。 通过在没有振动的情况下将浆料涂布在基板上形成CI（G）S基前体薄膜。 将CI（G）S基前体薄膜干燥。 通过使用硒蒸汽对CI（G）S基前体薄膜进行硒化。 （附图标记）（AA）开始; （BB）制造CI（G）S纳米颗粒; （CC）制造浆料; （DD）无振动涂层; （EE）干燥; （FF）硒化和热处理; （GG）步骤a; （HH）步骤b; （二）步骤c; （JJ）步骤d; （KK）步骤e; （LL）结束

公开(公告)号：KR101281052B1

公开(公告)日：2013-07-09

申请号：KR1020120012466

申请日：2012-02-07

Applicant: 한국에너지기술연구원

Inventor： 곽지혜 ,  윤재호 ,  안세진 ,  윤경훈 ,  신기식 ,  정국영 ,  안승규 ,  조아라 ,  박희선 ,  최성우

IPC: H01L31/0749 ,  H01L31/042 ,  H01L31/18

CPC classification number: H01L31/18 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A method for manufacturing a CIGS thin film for a solar cell using a simplified co-evaporation method and the CIGS thin film for the solar cell manufactured by the same are provided to improve the efficiency of a process by sufficiently implementing a band gap grading effect due to a Ga composition distribution and a crystal growth in a thin film. CONSTITUTION: Cu, Ga, and Se are deposited on a substrate at 500 to 600 degrees centigrade with a co-evaporation method. Cu, Ga, Se, and In are deposited on the substrate at 500 to 600 degrees centigrade with the co-evaporation method. A Ga and Se co-evaporation process and an Se evaporation process are successively performed while a temperature falls on the substrate. [Reference numerals] (AA) Start; (B1) Cu, Ga, and Se are deposited under vacuum; (B2) Step a; (C1) Cu, Ga, Se, and In are deposited under vacuum; (C2) Step b; (D1) Ga and Se co-evaporation process and an Se evaporation process are successively performed while a temperature falls on the substrate; (D2) Step c; (EE) Finish

Abstract translation: 目的：提供一种使用简化的共蒸发方法制造太阳能电池的CIGS薄膜的方法和由其制造的用于太阳能电池的CIGS薄膜，以通过充分实施带隙分级来提高工艺的效率 由于Ga组分分布和薄膜中的晶体生长而产生的效果。 构成：Cu，Ga和Se以共蒸发方法在500至600摄氏度的基板上沉积。 Cu，Ga，Se和In以共蒸发方法在500至600摄氏度的温度下沉积在基板上。 当温度落在基板上时，连续进行Ga和Se共蒸发处理和Se蒸发处理。 （附图标记）（AA）开始; （B1）Cu，Ga和Se在真空下沉积; （B2）步骤a; （C1）Cu，Ga，Se和In在真空下沉积; （C2）步骤b; （D1）Ga和Se共蒸发处理和Se蒸发处理，同时温度落在基板上; （D2）步骤c; （EE）完成

公开(公告)号：KR1020130072738A

公开(公告)日：2013-07-02

申请号：KR1020110140283

申请日：2011-12-22

Applicant: 한국에너지기술연구원

Inventor： 곽지혜 ,  윤재호 ,  안세진 ,  윤경훈 ,  정성훈 ,  신기식 ,  안승규 ,  조아라 ,  박상현

IPC: H01L31/06 ,  H01L31/042 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/06 ,  H01L31/042 ,  H01L31/18

Abstract: PURPOSE: A method for manufacturing a CZTSe group thin film for a solar cell using co-evaporation process and a CZTSe group thin film manufactured by the same are provided to increase energy conversion efficiency, by achieving uniform element distribution. CONSTITUTION: Cu, Zn, Sn and Se are deposited on a substrate. The deposition is performed at a substrate temperature of 450-600°C. The deposition is performed by using co-evaporation. Sn and Se are additionally deposited according to the co-evaporation. The reduced substrate temperature is used for the additional deposition. [Reference numerals] (AA) Temperature (°C); (BB) Time (minute)

Abstract translation: 目的：提供一种使用共蒸发方法制造太阳能电池用CZTSe薄膜的方法和由其制造的CZTSe薄膜组件，以通过实现均匀的元件分布来提高能量转换效率。 构成：将Cu，Zn，Sn和Se沉积在基材上。 在450-600℃的基板温度下进行沉积。 通过共蒸发进行沉积。 根据共蒸发，另外沉积Sn和Se。 降低的衬底温度用于附加沉积。 （标号）（AA）温度（℃）; （BB）时间（分钟）

公开(公告)号：KR1020130016528A

公开(公告)日：2013-02-18

申请号：KR1020110078523

申请日：2011-08-08

Applicant: 한국에너지기술연구원

Inventor： 곽지혜 ,  윤재호 ,  안세진 ,  윤경훈 ,  정성훈 ,  신기식 ,  안승규 ,  조아라 ,  박상현

IPC: H01L31/0445 ,  H01L31/18

CPC classification number: H01L31/0326 ,  Y02E10/50

Abstract: PURPOSE: A method for preparing A CZT(S,Se) thin film and the CZT(S,Se) thin film prepared by the same are provided to prevent the loss of Sn in a process of the CZT(S,Se) thin film. CONSTITUTION: Cu, Zn and Sn are sequentially deposited on a substrate by using a vacuum evaporation process. A CZT precursor thin film is formed by the vacuum evaporation. A selenization process is performed on the CZT precursor thin film. A sulfurization process is performed on the CZT precursor thin film.

Abstract translation: 目的：提供一种制备CZT（S，Se）薄膜及其制备的CZT（S，Se）薄膜的方法，以防止在CZT（S，Se）薄膜的工艺中Sn的损失 。 构成：通过使用真空蒸发法将Cu，Zn和Sn顺序沉积在基板上。 通过真空蒸发形成CZT前体薄膜。 在CZT前驱体薄膜上进行硒化处理。 在CZT前驱体薄膜上进行硫化处理。

公开(公告)号：KR1020120133342A

公开(公告)日：2012-12-10

申请号：KR1020110051975

申请日：2011-05-31

Applicant: 한국에너지기술연구원 ,  엘지이노텍 주식회사

Inventor： 안세진 ,  윤경훈 ,  윤재호 ,  곽지혜 ,  조아라 ,  신기식 ,  안승규 ,  김경암

IPC: H01L31/0445 ,  H01L31/18

CPC classification number: H01L31/0322 ,  C23C14/0623 ,  C23C14/3464 ,  C23C14/5866 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A manufacturing method for a CIGS(copper indium gallium diselenide) thin film having an uniform Ga distribution are provided to improve efficiency of a solar cell by minimizing a segregation phenomenon in the CIGS thin film. CONSTITUTION: A Cu-In-Ga-Se precursor thin film including a selenide compound having a covalent bond structure is formed on a substrate. The precursor thin film is heat-treated in selenization. A formation method of the precursor thin film is a deposition method by a sputtering method or a thermal evaporation. The sputtering method is performed by containing a target including selenium.

Abstract translation: 目的：提供具有均匀Ga分布的CIGS（铜铟镓硒）薄膜的制造方法，以通过使CIGS薄膜中的偏析现象最小化来提高太阳能电池的效率。 构成：在基板上形成包含具有共价键结构的硒化合物的Cu-In-Ga-Se前体薄膜。 在硒化中对前体薄膜进行热处理。 前体薄膜的形成方法是通过溅射法或热蒸发的沉积方法。 通过含有包含硒的靶进行溅射法。

公开(公告)号：KR1020120131536A

公开(公告)日：2012-12-05

申请号：KR1020110049768

申请日：2011-05-25

Applicant: 한국에너지기술연구원

Inventor： 안세진 ,  윤경훈 ,  윤재호 ,  곽지혜 ,  조아라 ,  신기식 ,  안승규

IPC: H01L31/0445 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A method for manufacturing a CIS-based thin film is provided to obtain high efficiency using a CIS-based compound thin film as a light absorption layer of a thin film solar cell. CONSTITUTION: CIS-based compound nanoparticles are manufactured. The CIS-based compound nanoparticles are CIS compound nanoparticles, CIGS compound nanoparticles, or CZTS compound nanoparticles. Slurry is manufactured by mixing the CIS-based compound nanoparticles, a chelating agent, and solvents. A CIS-based compound thin film is formed by coating the CIS-based compound slurry. The CIS-based compound thin film is thermally processed.

Abstract translation: 目的：提供一种用于制造基于CIS的薄膜的方法，以使用基于CIS的复合薄膜作为薄膜太阳能电池的光吸收层来获得高效率。 构成：制造CIS基复合纳米粒子。 CIS基复合纳米粒子是CIS复合纳米粒子，CIGS复合纳米粒子或CZTS复合纳米粒子。 通过混合基于CIS的化合物纳米颗粒，螯合剂和溶剂制备浆料。 通过涂布基于CIS的复合浆料形成基于CIS的复合薄膜。 基于CIS的复合薄膜进行热处理。

公开(公告)号：KR1020120131535A

公开(公告)日：2012-12-05

申请号：KR1020110049766

申请日：2011-05-25

Applicant: 한국에너지기술연구원

Inventor： 안세진 ,  윤경훈 ,  윤재호 ,  곽지혜 ,  조아라 ,  신기식 ,  안승규

IPC: H01L31/0445 ,  H01L31/0749 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A method for manufacturing a CIGSe/CISe thin film by the selenization of CIGS/CIS nano particles is provided to improve the efficiency of a solar cell by inducing the high densification of a CIGSe thin film due to lattice expansion. CONSTITUTION: Cu-In-Ga-S or Cu-In-S compound nano particles that are precursors are manufactured(S1). Slurry including precursor nano particles is manufactured(S2). A CIGS or CIS precursor thin film is formed by coating a substrate with the slurry(S3). The precursor thin film is dried(S4). The precursor thin film is thermally processed using vapor selenium(S5). [Reference numerals] (AA) Start; (BB) Is it a desirable thickness?; (CC) End; (S1) Manufacturing CIGS or CIS nanoparticles; (S2) Manufacturing CIGS or CIS nanoparticles based slurry; (S3) Coating slurry with a non-vacuum state; (S4) Drying; (S5) Thermal process with selenization and high temperature

Abstract translation: 目的：提供通过CIGS / CIS纳米颗粒的硒化制造CIGSe / CISe薄膜的方法，以通过由于晶格扩展引起CIGSe薄膜的高致密度来提高太阳能电池的效率。 构成：制造作为前体的Cu-In-Ga-S或Cu-In-S复合纳米粒子（S1）。 制备包括前体纳米颗粒的浆料（S2）。 通过用浆料涂覆基材来形成CIGS或CIS前体薄膜（S3）。 将前体薄膜干燥（S4）。 使用蒸气硒对前体薄膜进行热处理（S5）。 （附图标记）（AA）开始; （BB）是否是期望的厚度？ （CC）结束; （S1）制造CIGS或CIS纳米颗粒; （S2）制造CIGS或CIS纳米颗粒基浆料; （S3）非真空状态的涂布浆料; （S4）干燥; （S5）硒化和高温热处理

公开(公告)号：KR101142951B1

公开(公告)日：2012-05-08

申请号：KR1020080033340

申请日：2008-04-10

Applicant: 한국에너지기술연구원

Inventor： 조아라 ,  이종섭 ,  민병무

IPC: B01J20/22 ,  B01D53/04 ,  F01N3/10

CPC classification number: B01D53/78 ,  B01D53/1493

Abstract: Disclosed is a flue gas absorbent composition which contains a compound and water. The compound has a ring structure and includes terminal primary amine groups and substituted alpha-carbon atoms neighboring the amine groups. Further, a use of a solution of a compound having a ring structure and terminal amine groups as a flue gas absorbent is disclosed. The absorbent composition includes a ring-structure compound having superior absorption ability when compared to conventional absorbents, thereby exhibiting excellent properties, i.e., flue gas absorption rate improved by 50 to 100% and flue gas absorption capacity improved by 200 to 400%, as compared with currently used absorbents such as monoethanolamine (MEA) and 2-amino-2-methyl-propanol (AMP).