公开(公告)号：DE19940362A1

公开(公告)日：2001-04-12

申请号：DE19940362

申请日：1999-08-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LUSTIG BERNHARD ,  SCHAEFER HERBERT ,  RISCH LOTHAR

IPC: H01L29/78 ,  H01L21/335 ,  H01L21/74 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L21/336

Abstract: Metal oxide semiconductor transistor comprises: sink doped with a first conductivity type in semiconductor substrate; epitaxial layer arranged in sink surface and having doping concentration of less than 10 cm ; and source/drain regions of second conductivity type and a channel region arranged in epitaxial layer. Depth of source/drain regions is less than or equal to epitaxial layer thickness. An Independent claim is also included for a process for the production of the metal oxide semiconductor (MOS) transistor comprising: producing a sink doped with a first conductivity type in the semiconductor substrate; growing an epitaxial layer on the surface of the sink; producing a gate dielectric on the surface of the epitaxial layer; forming a gate electrode on the surface of the gate dielectric; and producing source/drain regions doped with second conductivity type in the epitaxial layer.