公开(公告)号：AU2003219244A1

公开(公告)日：2003-09-04

申请号：AU2003219244

申请日：2003-01-24

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL

IPC: C23C16/40 ,  C23C16/44 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L21/02

Abstract: Disclosed is an electronic micro component (1) made on the basis of a semi-conducting substrate (2), comprising a capacitive structure which is applied on top of a main plane (7) of the substrate. The capacitive structure is provided with two electrodes (20,33), each of which comprises a flat portion (11, 38) running parallel to the main plane (7) of the substrate and a plurality of walls (16-18,34-37) that run parallel to each other and perpendicular to the flat portion (11, 38), to which said walls are connected. The parallel walls of each electrode are arranged one (16-18) between the other (34-37).

公开(公告)号：FR2832853A1

公开(公告)日：2003-05-30

申请号：FR0115458

申请日：2001-11-29

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN BAPTISTE

IPC: H01F17/00 ,  H01F41/04 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L21/02

Abstract: Electronic component incorporating inductive microcomponent is manufactured by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate (1); (ii) depositing layer (12) forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.

公开(公告)号：CA2409237A1

公开(公告)日：2003-05-29

申请号：CA2409237

申请日：2002-10-21

Applicant: MEMSCAP

Inventor： GIRARDIE LIONEL ,  DAVID JEAN-BAPTISTE

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/12 ,  H01L23/15 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08 ,  H01F37/00 ,  H01L21/70 ,  H01L49/02

Abstract: L'invention concerne un procédé permettant de fabriquer des composants électroniques incorporant un micro-composant inductif, disposé au dessus d' un substrat. Un tel composant comporte: - une couche (10) de matériau à faible permittivité relative, reposant sur la face supérieure du substrat (1); - un ensemble de spires métalliques (30-31), définies au-dessus de la couche (10) de matériau à faible permittivité relative; - une couche (15) barrière à la diffusion du cuivre, interposée entre les spires métalliques (30-31) et la couche de matériau à faible permittivité relative.