Abstract:
PURPOSE:To form the titled laser element into a single mode to form it into a circular beam as well as to contrive improvement in its power by a method wherein each semiconductor layer is bent accurately and highly precisely along the stepping, and the confinement of light by the intermediate layer is relieved to some degree. CONSTITUTION:As chemical semiconductor layers 12-17 are epitaxially grown in vapor-phase one after another, a meltback can be prevented, and the generation of a crystal defect, the irregularity of shape and the deterioration in preciseness can also be eliminated. Also, as siad semiconductor layers 12-17 are accurately bent along the stepping 11b, current is concentrated mainly at the stepping 11b. The confinement of light is performed by the working region of the active layer 4 base on the curve is longitudinal and lateral directions and also base on the difference in refractive indexes on the interface of the intermediate layers 13 and 15, and the clad layers 12 and 16. By having a energy band between the clad layers 12 and 16, with which said confinement is performed, and the active layer 14 larger than that of the active layer, and by having an intermediary of the intermediate layers 13 and 15 which have the energy band smaller than that of the clad layers 12 and 16, the confinement of light is relieved, and the effect of widening the injection region of the carrier is generated, thereby enabling to improve the power of the titled laser element.
Abstract:
PROBLEM TO BE SOLVED: To devise to arrange and fix a detection nucleotide chain in an elongated state to improve the efficiency of hybridization. SOLUTION: This hybridization detection 1a or the like in which a reaction region as a hybridization field between a nucleotide chain X for detection and a target nucleotide chain Y having a base sequence complementary to the nucleotide chain X for the detection can be fixed to the end E of a scanning electrode C by the action of dielectrophoresis, while the nucleotide chain X for the detection is elongated in an electric field. A sensor chip having the detection portion 1a and the like. The hybridization method using the same. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To efficiently and effectively apply an electric field to a reaction region by a simple configuration and to especially concentrate the electric field to the specific region of the electrode fronted to the reaction region. SOLUTION: In the detection part having the reaction region R becoming the field of the interaction between substances, electrode layers 12 and 13 used when the electric field E is applied to the reaction field R and the insulating layers 14 for covering the surfaces of electrodes. Specific insulating parts 141 high in dielectric constant are provided to the insulating layers 14 to concentrate the electric field to the specific insulating parts 141. For example, the specific insulating parts 141 are set to a region formed of a material of which the dielectric constant is higher than that of a peripheral insulating layer 142. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electrode unit suitable for a bioassay substrate represented by a DNA chip. SOLUTION: This electrode unit 1a provided with the first electrode E 1 functioned as a detecting surface for fixing a detecting substance provided to be faced to a reaction area 21 for providing an interaction field between the substances in a liquid phase R or the like, and provided with the second electrode E 2 in a position faced therewith has a frame-like shape in its appearance view, and the present invention provides the electrode unit with the second electrode E 2 formed in an end face 121 part of the frame part 12 thereof, an interaction detecting part between the substances and the bioassay substrate using the electrode unit 1a or the like. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To prevent reaction efficiency from being reduced by steric hindrance during mutual reactive actions among molecules by fixing detecting molecules in moderate density. SOLUTION: A detection surface 1 is formed on a substrate 2 facing a reaction region R which provides an intermolecular mutual reactive action field between detecting molecules D, having a thiol group (-SH) or a disulfide group (-S-S-) and target molecules T for specifically reacting with the detecting molecules D. Island-like metal thin film 11 of, such as gold, are formed scattered on the detection surface 1 with intervals, and the detection surface 1 of the mutual reactive action between the molecules is provided so as to fix the detecting molecules D to the metal thin film 11 via the mercapto group or the disulfide group. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an optically functional element that breaks through the limitation of the device density, when a flat face substrate is used, alleviate the wiring difficulty, when a ball semiconductor is used and is based on a novel principle of operation. SOLUTION: A functional element, for example, a photo-electronic device 2 is formed on the circumference of the one-dimensional structure 1, 5 formed with a material, for example, an organic substance to prepare fibrous functional material. The one-dimensional structure 1, 5 is allowed to have a hierarchical structure according to the objective, for example, allowed to have a refractive index distribution or a hollow structure. This functional material is used as a basic fiber and woven up to form the two-dimensional intelligent fabric having a desired functions. The resultant intelligent fabric is used in an artificial muscle, a computer, a chemical treatment system. In another case, a photofunctional element is constituted by using the mutual action of 4 or more outer wires as the principle of operation and the constituted photofunctional element is used to constitute a display unit.
Abstract:
PROBLEM TO BE SOLVED: To provide a picture generation and picture recording method and a picture generation and picture recording device in which documentation of an interview result is made efficient. SOLUTION: The device is provided with picture display devices DA and DB and signal inputting devices IA and IB. The display picture data are constituted of two layers of picture data G1 for a common picture layer and picture data G2 for a dedicated picture layer. The data G1 are updated on a tentative file TGF1 from either one of the devices IA and IB. On the other hand, the data G2 are updated on a tentative file TGF2 only from the device IA. The data G1 are displayed on the devices DA and DB. The data G2 are only displayed on the device DA and are superimposed and displayed with the data G1. The data G1 and G2 of the both layers are stored and recorded into the files GF1 and GF2, respectively, provided in a recording device HD.
Abstract:
PROBLEM TO BE SOLVED: To obtain photons on the order of a specific number of pieces or higher, whose wavelength is made short by a method wherein electrons in an electron beam are made to collide with photons in a laser beam which is radiated from a laser light source and, out of the cross-sectional area of the colliding electron beam and that of the colliding laser beam, the large-cross-sectional area satisfies a specific condition. SOLUTION: A laser beam which is radiated from a laser light source 20 is passed through a lens system 21, it is reflected by a half mirror 22, and it is focused in a space in which it collides with an electron beam which is radiated from an electron beam source 10 and which is moved at a relativistic speed. On the other hand, the electron beam which is radiated from the electron beam source 10 is focused, by a focusing lens system 13, in a space in which it collides with the laser beam radiated from the laser light source 20. Then, out of the cross-sectional area of the colliding electron beam and that of the colliding laser beam, the larger cross-sectional area is designated as A (unit: cm ). Then, 1×10 is satisfied. Thereby, it is possible to obtain photons which are of the order of 10 pieces or higher and whose wavelength is made short.
Abstract:
A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.