公开(公告)号：FR2568064A1

公开(公告)日：1986-01-24

申请号：FR8511015

申请日：1985-07-18

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  OKADA TSUNEKAZU ,  CHIBA MICHIRO

IPC: H01S5/00 ,  H01S5/223 ,  H01S3/18

Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.

公开(公告)号：DE3525703A1

公开(公告)日：1986-02-20

申请号：DE3525703

申请日：1985-07-18

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  OKADA TSUNEKAZU ,  CHIBA MICHIRO

IPC: H01S5/00 ,  H01S5/223 ,  H01S3/05 ,  H01S3/19

Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.

公开(公告)号：CA1253945A

公开(公告)日：1989-05-09

申请号：CA486983

申请日：1985-07-17

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  OKADA TSUNEKAZU ,  CHIBA MICHIRO

IPC: H01S5/00 ,  H01S5/223 ,  H01S3/18

Abstract: A semiconductor laser is disclosed, which is formed such that on a substrate there are in turn formed a first cladding layer, an active layer, a second cladding layer and a light absorbing layer for limiting a current path and for absorbing a light oscillated out from the active layer. In this case, the light absorbing layer is provided with a removed-away portion of stripe-shape for forming the current path, and in which the width W of the removed-away portion is selected in a range from 1 to 4 .mu.m, the thickness d1 of the active layer is selected so as to satisfy the condition of d1 ? 500 .ANG. and the distance d2 between the active layer and the light absorbing layer is selected in a range from 0.2 to 0.7 .mu.m, respectively.

公开(公告)号：GB2163288A

公开(公告)日：1986-02-19

申请号：GB8518182

申请日：1985-07-18

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  OKADA TSUNEKAZU ,  CHIBA MICHIRO

IPC: H01S5/00 ,  H01S5/223 ,  H01S3/19

Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.

公开(公告)号：JPS61150392A

公开(公告)日：1986-07-09

申请号：JP27557584

申请日：1984-12-25

Applicant: SONY CORP

Inventor： CHIBA MICHIRO ,  YONEYAMA OSAMU ,  ODA TATSUJI

IPC: H01S5/00

Abstract: PURPOSE:To improve the effect of current concentration by applying a protective layer onto the surface of a semiconductor laser, forming a mask in a predetermined region, implanting ions through the protective layer, shaping a current constriction region to sections except the mask, removing the mask and forming an electrode to a removing section when the electrode is shaped to the laser. CONSTITUTION:An N-type AlGaAs first clad layer 2, a GaAs active layer 3, a P-type AlGaAs second clad layer 4, and a P-type cap layer 5 are laminated onto an N-type GaAs substrate 1 and grown in an epitaxial manner, and a protective layer 10 consisting of SiN, SiO2, etc., which do not damage these layers and have not high stopping power even to element ions having large atomicity, is applied when ions are implanted onto the layer 5. Masks 9 com posed of a photo-resist are formed into predetermined regions on the layer 10, and B ions are implanted to sections where there are no mask 9 through the layer 10 to shape current constriction regions 6 intruding to the layer 2. The masks 9 and the layer 10 are removed through etching, electrode windows are bored onto the layer 5 narrowed by the regions 6, and Au electrodes 7 are applied to the windows and an ohmic electrode 8 onto the back of the substrate 1 respectively.

公开(公告)号：JPH0685455B2

公开(公告)日：1994-10-26

申请号：JP14923984

申请日：1984-07-18

Applicant: SONY CORP

Inventor： MAMINE TAKAYOSHI ,  OKADA TSUNEICHI ,  CHIBA MICHIRO

IPC: H01S5/00 ,  H01S5/223 ,  H01S3/18

Abstract: A semiconductor laser comprises a substrate (31) in which there are formed, in turn, a first cladding layer (32), an active layer (33), a second cladding layer (34) and a light absorbing layer (35) for limiting a current path and for absorbing light emitted from the active layer (33). The light absorbing layer (35) is provided with a stripe-shaped removed portion (35a) for forming the current path. The width (W) of the removed portion (35a) is selected to be in a range of from 1 to 4 microns, the thickness (d1) of the active layer (33) is selected to be not less than approximately 500 Angstroms, and the distance (d2) between the active layer (33) and the light absorbing layer (35) is selected to be in a range of from 0.2 to 0.7 microns.

公开(公告)号：JPS62104093A

公开(公告)日：1987-05-14

申请号：JP24306785

申请日：1985-10-30

Applicant: SONY CORP

Inventor： MOTOHORI ISAO ,  CHIBA MICHIRO ,  KAMEI MASABUMI ,  ODA TATSUJI

IPC: H01S5/00

Abstract: PURPOSE:To prevent an interference from occurring due to a returning light by forming the active layer of an end face protecting film in thickness for reducing the absorption of a laser beam, and forming it in thickness to satisfy the non-reflection condition of the part covered on returning light incident unit. CONSTITUTION:A semiconductor chip 11 for forming a semiconductor laser 10 is chip-bonded to a heat sink 15 by a p-type side electrode 14 formed on the surface. The thicknesses of end face protecting films 16, 16 made of SiN formed on the light emitting end face 10a and the opposite side end face ae reduced from the front surface side toward the back surface side. The thickness Ta of the portion to cover an active layer 12 is the value for satisfying the condition that the absorption is least, and the thickness Tb of the portion for covering the returning light incident portion 17 is set to the value for satisfying the non-reflecting condition, and the thickness Tb is approx. 1/2 of the thickness Ta. Accordingly, the reflection at the end face 10a can be prevented to eliminate the error in the detection of a tracking error.

公开(公告)号：JPS6127694A

公开(公告)日：1986-02-07

申请号：JP14923984

申请日：1984-07-18

Applicant: Sony Corp

Inventor： MAMINE TAKAYOSHI ,  OKADA TSUNEICHI ,  CHIBA MICHIRO

IPC: H01S5/00 ,  H01S5/223

CPC classification number: H01S5/2231

Abstract: PURPOSE: To decrease the noise and the threshold current Ith, by providing a first clad layer, an active layer, a second clad layer and a light absorbing layer successively to be contacted with each other while particularly selecting the width of a blank portion of the light-absorbing layer, the thickness of the active layer and the distance between the active layer and the light absorbing layer.
CONSTITUTION: On an N tpye GaAs substrate 31, provided are an N type first clad layer 32, P or N type active layer 33, a P type second clad layer 34 having a different type of conductivity from the first clad layer 32, a light absorbing layer 35 having an effect for limiting the current path and absorbing light from the active layer 33, and a P type cap layer 36 having the same type of conductivity as the second clad layer 34. The light absorbing layer 35 is provided with a blank portion 35a, whose width W is selected to be 1∼4μm, preferably 2∼ 4μm. The thickness d
1 of the active layer 33 is selected such that d
1 ≥500Å, preferably 1,500Å>d
1 >700Å. The distance d
2 between the active layer 33 and the light receiving layer 35 is selected to be 0.2∼0.7μm, preferably 0.3∼0.5μm.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：为了降低噪声和阈值电流Ith，通过提供第一覆盖层，有源层，第二覆盖层和光吸收层，以连续地彼此接触，同时特别选择第二覆盖层的空白部分的宽度 光吸收层，有源层的厚度以及有源层和光吸收层之间的距离。 构成：在N ppye GaAs衬底31上设置有N型第一覆盖层32，P或N型有源层33，具有与第一覆盖层32不同的导电性的P型第二覆盖层34，光 具有限制电流路径并吸收来自有源层33的光的效果的吸收层35以及具有与第二覆盖层34相同类型的导电性的P型覆盖层36.光吸收层35设置有空白 其宽度W选择为1-4μm，优选为2〜4μm的部分35a。 选择有源层33的厚度d1使得d1> = 500Ang，优选1500Ang> d1> 700A。 有源层33和光接收层35之间的距离d2选择为0.2-0.7μm，优选为0.3-0.5μm。