-
公开(公告)号：JPS6390887A
公开(公告)日：1988-04-21
申请号：JP23696386
申请日：1986-10-04
Applicant: SONY CORP
Inventor： MATSUDA OSAMU
Abstract: PURPOSE:To provide a high precision and small size as well as simplified and inexpensive manufacture to an optical device adapted for reflecting the light from a light emitting element to the exterior by means of a prism and guiding the light returning from the exterior to a photo detector by means of the prism by integrally forming the prism, photo detector and light emitting element using a crystal as the material. CONSTITUTION:A groove 4 having a 'V'-shaped cross section is formed in the intermediate part of the surface of a transparent crystal substrate 1, and one side of the groove 4 of the crystal substrate 1 is made into a prism 7 having one or a plurality of photo detectors 9-11 formed on the surface or the side thereof. Also, the surface 14 of the other side of the rear groove 4 is made lower than the height of the surface 2 of the one side, and on the surface 14, a light emitting element 15 for emitting a light directing to the prism 7 is integrally formed. For instance, in the intermediate part of the surface 2 of a crystal substrate 1 made of n-type A GaAs, a groove 4 having a 'V'-shaped cross section is formed by means of an anisotropical etching, and photo diodes 9-11 are formed in the rear side 3 of the prism 7 on the left of the groove 4. Further, as to a light emitting element forming section 13 on the right, the height of the surface 14 is made lower than that of the surface 2, and on the surface 14 a laser diode 15 is formed.
-
公开(公告)号：JPS61206286A
公开(公告)日：1986-09-12
申请号：JP4721885
申请日：1985-03-09
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , TOTSUKA KAZUO
IPC: H01L21/301 , H01L21/78 , H01S5/00
Abstract: PURPOSE:To prevent the warpage of the distribution of luminous intensity, and to save power by half-cutting a semiconductor wafer, bonding a semiconductor laser chip so that the outgoing end surface of laser beams is protruded slightly to the upper section of a groove formed through a half-cut and full- cutting the wafer. CONSTITUTION:An N type semiconductor layer 2 and a P-type semiconductor region 3 are shaped onto the surface of an N type silicon semiconductor wafer 1 to form a PIN type monitor photodiode 4, and an N type semiconductor region 5 is shaped where slightly separate from the semiconductor region 3. A region to be diced in the surface of the semiconductor wafer 1 is half-cut through sawing, thus obtaining a groove 8. Semiconductor laser chips 9 are bonded onto each solder layer 7, and the positions of laser-beam outgoing end surfaces 11 are set so that the end surfaces 11 are protruded slightly onto the grooves 8 from the solder layers 7. The wafer is full-cut by a cutter 12 for dicing, and pelletized. Accordingly, the eclipse of laser beams is not generated, thus preventing the warpage of the distribution curve of luminous intensity in the vertical direction of laser beams, then saving the man-hour of the work.
-
公开(公告)号：JPS6195591A
公开(公告)日：1986-05-14
申请号：JP21679084
申请日：1984-10-16
Applicant: Sony Corp
Inventor： AYABE MASAAKI , MITA ARIO , MATSUDA OSAMU
CPC classification number: H01S5/02248 , H01L2224/48091 , H01S5/0683 , H01L2924/00014
Abstract: PURPOSE: To simply inspect and measure whether an FFP has a symmetry or not even at the stage that it is not yet mounted on a heat sink or a header by forming a plurality of photodetectors for receiving the laser light from a semiconductor laser on the surface of a semiconductor substrate, thereby accurately positioning and bonding the chip to the substrate.
CONSTITUTION: Three PIN photodiodes PDl, PDc, PDr are disposed in parallel with a center line 6 of a semiconductor substrate 1 on the surface of a monitor region 7 of the substrate 1. A probe 9l is contacted with the surface of the photodiode PDl of the left side as seen from a semiconductor laser chip 2 side, a probe 9l is contacted with the surface of the photodiode PDr of the right side, reverse bias voltage of the same value is applied individually to the photodiodes PDl and PDr to detect the photocurrents flowed to the photodiodes PDl and PDr at that time, thereby comparing the photocurrents. If there is no difference exceeding the allowable preset range between the photocurrents, the laser is judged as having symmetry in the FFP.
COPYRIGHT: (C)1986,JPO&JapioAbstract translation: 目的：为了简单地检查和测量FFP是否具有对称性，即使在尚未安装在散热器或集管上的阶段，通过形成多个用于从表面上的半导体激光器接收激光的光电检测器 的半导体衬底，从而将芯片精确地定位并结合到衬底。 构成：三个PIN光电二极管PD1，PDc，PDr与衬底1的监测区域7的表面上的半导体衬底1的中心线6平行设置。探针9l与光电二极管PD1的表面接触 从半导体激光器芯片2侧观察的左侧，探针9l与右侧的光电二极管PDr的表面接触，将相同值的反向偏置电压分别施加到光电二极管PD1和PDr以检测光电流 此时流向光电二极管PD1和PDr，从而比较光电流。 如果在光电流之间没有超过允许的预设范围的差异，则在FFP中判断激光具有对称性。
-
公开(公告)号：JPS5925217A
公开(公告)日：1984-02-09
申请号：JP13388082
申请日：1982-07-31
Applicant: Sony Corp
Inventor： MORI YOSHIFUMI , WATABE SHIYOUZOU , MATSUDA OSAMU
IPC: H01L21/205 , H01S5/00
CPC classification number: H01L21/0262 , H01L21/0243 , H01L21/02433 , H01L21/02538
Abstract: PURPOSE:To obtain the Distributed Feed-back (DFB) type semiconductor laser having a periodic structure in a simple and reliable manner by a method wherein, when a thermal decomposition vapor phase growing method is performed on a III-V group compound semiconductor, the feeding rate of V-group element composition for III-group element composition is diviated, thereby enabling to obtain the crystal surface {111} or {311}. CONSTITUTION:When a goove 2 of V-shaped cross section, having the inner face along A-crystal surface {111}, is formed in stripe form on a main surface of the III-V group compound semiconductor substrate 1 having plate surface in crystal face direction {100}, a III-V group compound semiconductor layer 3 is grown on the main surface 1a of the substrate 1 including said groove 2 by performing MOCVD (Metal Organic Chemical Vapor Deposition) method, which is a thermal decomposition vapor phase growing method. The crystal surface appearing on the surface of the semiconductor layer 3 which will be deposited and grown on the substrate 1 differs according to the feeding rate R=CV/C III, which will be relatively small or relatively large.
Abstract translation: 目的：通过一种方法获得具有周期性结构的分布式反馈（DFB）型半导体激光器，其中当对III-V族化合物半导体进行热分解气相生长方法时， III族元素组成的V族元素组成的摄取率分散，能够得到晶体面{111}或{311}。 构成：当具有沿A晶面{111}的内表面的具有V形截面的goove 2在带有晶体表面的III-V族化合物半导体衬底1的主表面上形成条纹时 通过进行作为热分解气相生长的MOCVD（金属有机化学气相沉积）法，在包括所述槽2的基板1的主表面1a上生长III-V族化合物半导体层3 方法。 将在基板1上沉积和生长的半导体层3的表面上出现的晶体表面根据相对较小或相对较大的馈送速率R = CV / C III而不同。
-
公开(公告)号：JPS5723292A
公开(公告)日：1982-02-06
申请号：JP9739880
申请日：1980-07-16
Applicant: Sony Corp
Inventor： MORI YOSHIFUMI , MATSUDA OSAMU
CPC classification number: H01S5/305 , H01S5/2232 , H01S5/2234 , H01S5/2237 , H01S5/3077 , H01S5/32308
Abstract: PURPOSE: To prevent an unnecessary spreading of current and decrease a threshold value of current, by a method wherein the configurations of the current passage and light passage of a laser device are made sufficiently narrow, and the current reduction for limiting the current passage is performed in an active layer and in the vicinity thereof.
CONSTITUTION: On the surface of an N type GaAs substrate 1 whose crystal in the surfacewise direction is (100), a groove 2 having inclined surfaces 3 is formed by etching, and over the whole surface including this, an N type GaAs buffer layer 4 and an N type GaAlAs trapping layer 5 are epitaxially grown, in a laminating manner, following the groove 2. Then, thereon, a P type GaAs active layer 6 is formed having an energy gap width smaller than that of the layer 5, and inclined surfaces 13' parallel to the inclined surfaces 3 are formed, on which an N type GaAlAs trapping layer 7 is grown having a large energy gap. Thus, hetero junctions J
1 and J
2 resulting from the gap width differences are produced at the respective interfaces between the layer 6 and the lower layer 5 and between the layer 6 and the upper layer 7. At the same time, a P-N junction part J
pe is formed at the interface between the layers 5 and 6, and then, a P type GaAs layer 8 having a flat surface is grown on the whole surface.
COPYRIGHT: (C)1982,JPO&JapioAbstract translation: 目的：为了防止电流的不必要的扩散和电流的阈值降低，通过使激光器件的电流通道和光通路的结构变得足够窄的方法，并且进行用于限制电流通过的电流减小 在活性层及其附近。 构成：在其表面方向的晶体为（100）的N型GaAs衬底1的表面上，通过蚀刻形成具有倾斜表面3的沟槽2，并且在包括其的整个表面上形成N型GaAs缓冲层4 并且N型GaAlAs捕获层5以层叠方式沿着沟槽2外延生长。然后，形成具有比层5的能隙宽度小的能隙间隙宽度的P型GaAs有源层6，并且倾斜 形成平行于倾斜表面3的表面13'，其上生长具有大能隙的N型GaAlAs捕获层7。 因此，在层6和下层5之间以及层6和上层7之间的各个界面处产生由间隙宽度差产生的异质结J1和J2。同时，PN结部分Jpe为 形成在层5和6之间的界面处，然后在整个表面上生长具有平坦表面的P型GaAs层8。
-
Patent Agency Ranking
公开(公告)号：JPH10173217A
公开(公告)日：1998-06-26
申请号：JP32558896
申请日：1996-12-05
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , DOI MASATO , TANIGUCHI TAKEHIRO , MATSUMOTO SHUICHI
IPC: H01L31/10 , H01L21/027
Abstract: PROBLEM TO BE SOLVED: To manufacture an optical integrated element, which is formed monolithically with an optical element, at low cost and with higher performance. SOLUTION: A parameter in the height direction of an element which is an object of measurement, such as a reflecting mirror, is measured in an SEM (scanning electron microscope) mode or the like of an electron beam exposure device (step S1), an electron beam resist is applied on each element (step S3), the parameter in the two-dimensional direction of one element out of the elements, which become objects of lithography using an electron beam, is measured in the SEM mode of the electron beam exposure device (step S4) and a calculation of the lighography line of the electron beam, which irradiates the element which is the object of measurement, is made (step S5). Moreover, the electon beam is irradiated on the element, which is the object of measurement, along the calculated lithography line (step S6), a developing treatment of a substrate 11 is performed (step S8), an etching treatment is performed (step S9) and a part lithographed with the electron beam is removed. Thereby, a parting line is formed on a PD(photodiode).
-
57.发明专利
公开(公告)号：JPH1010374A
公开(公告)日：1998-01-16
申请号：JP16461896
申请日：1996-06-25
Applicant: SONY CORP
Inventor： MATSUDA OSAMU , NARUI HIRONOBU , MATSUMOTO SHUICHI , DOI MASATO
IPC: G02B6/32 , G02B6/42 , H01L31/02 , H01L31/12 , H01S5/00 , H04B10/2581 , H04B10/40 , H04B10/43 , H04B10/50 , H04B10/60 , H01S3/18 , H04B10/02 , H04B10/28
Abstract: PROBLEM TO BE SOLVED: To provide a light emitting and receiving mechanism element and an optical communication element which have high transfer rates and high reliability and are suitable for a high volume production and are capable of making costs low and its manufacturing method. SOLUTION: This light emitting and receiving mechanism element is constituted by joining a light emitting and receiving element 2 and a light transmissive supporting waveguide body 3 and the light emitting and receiving element 2 forms a confocal type coupler monolithically and the light transmissive supporting waveguide 3 is provided with a concave shaped or convex shaped supporting part which supports an optical fiber 10 and is provided with a center axis. Moreover, the light emitting and receiving element 2 and the supporting waveguide 3 are joined by making the optical axis 6 of the light emitting and receiving element 2 and the center axis of the supporting waveguide body 3 coincide.
-
公开(公告)号：JPH08213707A
公开(公告)日：1996-08-20
申请号：JP1446895
申请日：1995-01-31
Applicant: SONY CORP
Inventor： NARUI HIRONOBU , DOI MASATO , SAWARA KENJI , MATSUDA OSAMU
Abstract: PURPOSE: To reduce the leakage current between a light emitting element and a light receiving element that are formed close to each other on the same substrate in an optical device. CONSTITUTION: A light emitting diode LD and a photodiode PD are formed within a closed distance on the same substrate 32, the photodiode PD is formed on a semiconductor layer having a slope 33 opposed to the light emitting diode LD and the slope 33 is formed as the 111}B crystal surface.
-
公开(公告)号：JPH08186327A
公开(公告)日：1996-07-16
申请号：JP34015894
申请日：1994-12-29
Applicant: SONY CORP
Inventor： NEMOTO KAZUHIKO , MATSUDA OSAMU , KOBAYASHI TOSHIMASA , DOI MASATO
Abstract: PURPOSE: To dissipate heat from the surface side of a semiconductor element which uses an optically coupled element, for a CLC device, which radiate light on the surface side and enters returned light from a part to be irradiated. CONSTITUTION: A semiconductor element is provided with an optically coupled element 51 in which a light-emitting part and a light-receiving part are arranged on a common substrate so as to be adjacent and in which returned light form a part to be irradiated with radiant light radiated from the light-emitting part is received and detected by the light-receiving part in a position near a cofocal position and with a package window part 32 which is composed of a transparent heat sink. The package window part 32 is constituted in such a way that it is pasted on the surface side from which light is output of the optically coupled element 51.
-
公开(公告)号：JPH08186326A
公开(公告)日：1996-07-16
申请号：JP34015794
申请日：1994-12-29
Applicant: SONY CORP
Inventor： NEMOTO KAZUHIKO , MATSUDA OSAMU , KOBAYASHI TOSHIMASA , DOI MASATO
Abstract: PURPOSE: To obtain the package, of a face-type semiconductor light-emitting element, which can dissipate heat from the surface side while light is being emitted to the surface side of the element by a method wherein the semiconductor light-emitting element is pasted so as to correspond to a wiring pattern formed on the light-emitting element side of a package window part. CONSTITUTION: A package is provided with a plurality of semiconductor light-emitting elements 31 (LDs) which emit light to the upper side with reference to a semiconductor substrate 35 and with a package window part 32 which is composed of a transparent heat sink. A wiring pattern 41 is formed on the light-emitting element side of the package window part 32, and the semiconductor light-emitting elements 31 are pasted so as to correspond to the wiring pattern 41. That is to say, the wiring pattern 41 is formed on the transparent heat sink 32, and the plurality of semiconductor light- emitting elements 31 (LDs) which emit light to the upper side with reference to the semiconductor substrate 35 are pasted on the side of the wiring pattern. Then, the plurality of semiconductor light-emitting elements are sealed with a resin 33 so as to be covered, and the transparent heat sink 32 is divided into a plurality of packages by a dicing operation.
-
-
-
-
-
-
-
-
-
Search Results
91
records
(took 0.024 seconds)
