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    51.
    发明专利
    失效

    公开(公告)号：JPH05335267A

    公开(公告)日：1993-12-17

    申请号：JP16010192

    申请日：1992-05-28

    Applicant: SONY CORP

    Inventor： MIYAJIMA TAKAO ,  NARUI FUMIYO

    IPC: H01L21/28 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/327 ,  H01S5/347 ,  H01L33/00 ,  H01S3/18

    Abstract: PURPOSE:To provide an ohmic electrode which is provided in a group II-VI N-type crystal layer in ZnSe, etc., and has a low specific resistance of contact, stable characteristic and uniform ohmic characteristic, and a method of formation of the electrode. CONSTITUTION:A method for forming an ohmic electrode 22 in a group II-VI N-type crystal layer is composed of a process of forming a heavily-doped layer 20 in a group II-VI N-type crystal layer 18, a process of etching a surface layer of the heavily-doped layer 20 and a process of forming a Ti layer 24 on the etched heavily doped layer 20 and for further forming metallic layers 26, 28 thereon. The ohmic electrode 22 is formed on a group II-VI N-type crystalline heavily doped layer 20 and consists of the Ti layer 24 and metal layers 26, 28 from the heavily-doped side.

    SIMULATION METHOD OF ION-IMPLANTATION PROCESS IN AN INCLINED DIRECTION
    52.
    发明专利
    SIMULATION METHOD OF ION-IMPLANTATION PROCESS IN AN INCLINED DIRECTION 失效

    公开(公告)号：JPH05152239A

    公开(公告)日：1993-06-18

    申请号：JP34019791

    申请日：1991-11-29

    Applicant: SONY CORP

    Inventor： MIYAJIMA TAKAO

    IPC: H01L21/265 ,  H01L21/00

    Abstract: PURPOSE:To obtain an impurity distribution where ion are implanted into a surface of a semiconductor substrate which is positioned at a lower part of an edge part of a lamination film by using a simulation means corresponding to an ionimplantation process in the nearly vertical direction by compensating a film thickness of the lamination film and an edge part inclination angle of the lamination film. CONSTITUTION:First of all, a film pressure (d)of a gate electrode layer 22 as a lamination film is compensated corresponding to an incidence angle thetain an ion-implantation process for obtaining a film pressure dh. Then, an angle of an edge part 26 is compensated corresponding to the incidence angle theta for obtaining an edge part angle of an edge part 26a after compensation, thus enabling a model of the gate electrode layer 22 to be compensated to a model of a pate electrode layer 22a. Therefore, when an ion-implantation simulation from nearly vertical direction is performed, an impurity distribution when ions are implanted from an inclined direction can be simulated relatively accurately, where dh=d.costheta, tanphi=(1/sintheta).costheta.

    SUPERCONDUCTING TRANSISTOR
    53.
    发明专利
    SUPERCONDUCTING TRANSISTOR 失效

    公开(公告)号：JPH01276681A

    公开(公告)日：1989-11-07

    申请号：JP10513288

    申请日：1988-04-27

    Applicant: SONY CORP

    Inventor： MORI YOSHIFUMI ,  SUZUKI MASAYUKI ,  MIYAJIMA TAKAO

    IPC: H01L39/22 ,  H01L29/78 ,  H01L41/18

    Abstract: PURPOSE:To facilitate switching operation between a superconducting state and a normal conducting state by a method wherein a stress in a superconducting channel part is varied to vary the superconduction transition temperature. CONSTITUTION:If a strain induced by the piezoelectric effect of a piezoelectric element 4 is given to the piezoelectric element 4 by applying a voltage to a gate electrode 5, a stress is induced in a superconductor 1 jointed with the piezoelectric element 4 and a superconduction transition temperature Tc is varied. With this constitution, if, for instance, the specific resistivity characteristics of a channel part are as shown by a curve 21, in a superconducting state which shows a higher transition temperature Tco than the transition temperature Tc under a predetermined ambient temperature T, the superconducting state is switched to the normal conducting state by lowering the transition temperature Tco to the transition temperature Tc1 lower than the temperature Tc as shown by a curve 22 by the change of the stress, so that the state between the first and second electrodes (source and drain) 2 and 3 can be switched from for instance, ON to OFF.

    Mode-lock semiconductor laser element and semiconductor laser device assembly
    54.
    发明专利
    Mode-lock semiconductor laser element and semiconductor laser device assembly 审中-公开
    模式半导体激光元件和半导体激光器件组件

    公开(公告)号：JP2014078753A

    公开(公告)日：2014-05-01

    申请号：JP2014000846

    申请日：2014-01-07

    Applicant: Sony Corp ,  ソニー株式会社 ,  Tohoku Univ ,  国立大学法人東北大学

    Inventor： OKI TOMOYUKI ,  KURAMOTO MASARU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE HIDEKI ,  YOKOYAMA HIROYUKI

    IPC: H01S5/065 ,  H01S5/14 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To provide a drive method of a mode-lock semiconductor laser element having a configuration capable of reducing influences of piezo polarization and spontaneous polarization.SOLUTION: The mode-lock semiconductor laser element has a laminate structure which includes: a first compound semiconductor layer 30 of a GaN compound semiconductor; a third compound semiconductor layer 40 having a light emitting region 41 and a saturable absorption region 42; and a second compound semiconductor layer 50 which are laminated in order; and a second electrode 62 and a first electrode 61. The second electrode 62 is separated into a first portion 62A and a second portion 62B by a separation groove 62C. When a current flows from a first portion of the second electrode to a first electrode via the light emitting region, the second electrode 62 gets into a forward bias state; and when a voltage is applied across the first electrode and the second portion of the second electrode, an electric field is applied to a saturable absorption region. Thus, the semiconductor laser element performs a single mode self-pulsation operation in the light emitting region.

    Abstract translation: 要解决的问题：提供具有能够减少压电极化和自发极化的影响的结构的锁模半导体激光元件的驱动方法。解锁：锁模半导体激光元件具有层叠结构，其包括：第一 GaN化合物半导体的化合物半导体层30; 具有发光区域41和可饱和吸收区域42的第三化合物半导体层40; 和第二化合物半导体层50; 第二电极62和第一电极61.第二电极62通过分离槽62C分离成第一部分62A和第二部分62B。 当电流从第二电极的第一部分经由发光区域流过第一电极时，第二电极62进入正向偏压状态; 并且当跨越第一电极和第二电极的第二部分施加电压时，电场被施加到可饱和吸收区域。 因此，半导体激光元件在发光区域中进行单模式自脉动操作。

    Optical device
    56.
    发明专利
    Optical device 审中-公开
    光学装置

    公开(公告)号：JP2011119630A

    公开(公告)日：2011-06-16

    申请号：JP2010045394

    申请日：2010-03-02

    Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

    Inventor： MIYAJIMA TAKAO ,  KODA RINTARO ,  WATANABE HIDEKI ,  OKI TOMOYUKI ,  KURAMOTO MASARU ,  YOKOYAMA HIROYUKI

    IPC: H01S5/022

    CPC classification number: H01S5/50 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/02212 ,  H01S5/02288 ,  H01S5/028 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/14 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S5/4006

    Abstract: PROBLEM TO BE SOLVED: To provide an optical device suppressing changes in a drive current and an optical output over time. SOLUTION: An optical amplifying element 20 on a stem 10 is called transmissive SOA and is adapted to amplify short-wavelength light incoming into an incidence side end face 20A to emit light having larger luminance than the incident light from an injection side end face 20B. Both the incidence side end face 20A and the injection side end face 20B of the optical amplifying element 20 have an antireflection film on the surface thereof. The optical amplifying element 20 is sealed by a stem 10 and a cap 30. Light transmission windows 32 are provided with the cap 30 in the opposite part of the incidence side end face 20A and the injection side end face 20B, respectively. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：提供抑制驱动电流和光输出随时间变化的光学装置。 解决方案：杆10上的光放大元件20被称为透射SOA，并且适于放大入射到入射侧端面20A中的短波长光，以发射具有比来自注射侧端的入射光更大的亮度的光 面20B。 光放大元件20的入射侧端面20A和注入侧端面20B都在其表面上具有防反射膜。 光学放大元件20由杆10和盖30密封。透光窗32在入射侧端面20A和注入侧端面20B的相对部分分别设置有盖30。 版权所有（C）2011，JPO＆INPIT

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    59.
    发明专利
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效

    公开(公告)号：JP2002280673A

    公开(公告)日：2002-09-27

    申请号：JP2001073463

    申请日：2001-03-15

    Applicant: SONY CORP

    Inventor： FUNATO KENJI ,  MIYAJIMA TAKAO

    IPC: H01L21/205 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide an AlBGaInN base semiconductor light emitting device in which distribution of In composition of an active layer is excellently uniform on the wafer surface. SOLUTION: The semiconductor light emitting device is an Alx By Ga1-x-y-z Inz N (1>x>=0, 1>y>=0, and 1>z>=0) base semiconductor light emitting device, and, in an example of a single quantum well structure, has an active layer including a single quantum well structure of a band structure, shown in Fig. 1 (a), having an InN well layer 44 sandwiched by GaN barrier layers 42A, 42B. Moreover, in an example of a multiple quantum well structure, the semiconductor light emitting device has an active layer including a multiple quantum well structure of a band structure, shown in Fig. 1 (b), in which InN well layers 48A to 48C are sandwiched by GaN barrier layers 46A to 46D, respectively.

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