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公开(公告)号:JP2001242300A
公开(公告)日:2001-09-07
申请号:JP2000057374
申请日:2000-03-02
Applicant: SONY CORP
Inventor: AKI YUICHI , KONDO TAKAO , TAKEDA MINORU , YAMAMOTO MASANOBU , MASUHARA SHIN , KASHIWAGI TOSHIYUKI
IPC: G21K5/04 , G11B7/26 , G11B11/105 , G11B23/00 , G21K5/00 , H01J37/09 , H01J37/30 , H01J37/301 , H01J37/305
Abstract: PROBLEM TO BE SOLVED: To provide an electron beam irradiation device capable of avoiding effectively scattering of an electron beam, and avoiding installation of a large- scale vacuum chamber. SOLUTION: This device is equipped with a support part 4 for supporting an electron beam irradiation object 3 to which the electron beam 2 is irradiated, and an electron beam irradiation head 6 facing to the electron beam irradiation object at minute intervals and having an electron beam outgoing hole 5 for irradiating the electron beam 2 to the electron beam irradiation object 3. The device has a constitution in which an electron beam passage 20 communicating with the electron beam outgoing hole 5 is installed in the electron beam irradiation head 6, and one or more ring-shaped gas absorbing grooves 61, 62 opened to the opposite face to the electron beam irradiation object are formed on the periphery of the centered electron beam outgoing hole 5, and a vacuum pump is connected to the electron beam passage 20 and the ring-shaped gas absorbing grooves 61, 62 to keep the electron beam passage at high vacuum.
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公开(公告)号:JP2001043575A
公开(公告)日:2001-02-16
申请号:JP21456299
申请日:1999-07-29
Applicant: SONY CORP
Inventor: TAKEDA MINORU , FURUKI MOTOHIRO , IMANISHI SHINGO
IPC: G03B27/72 , G03F7/20 , G11B7/09 , G11B7/12 , G11B7/122 , G11B7/125 , G11B7/127 , G11B7/135 , G11B7/1387 , G11B7/26
Abstract: PROBLEM TO BE SOLVED: To form a fine latent image, to expose a master disk in which a recording density is improved by modulating an exposing laser beam whose wavelength by an SHG is the specified value or less with a modulation means and irradiating the master disk by a near-field effect using an objective lens whose numerical aperture is the specified value or more. SOLUTION: In a laser beam source 43, an exposing laser beam L2 having the prescribed wavelength is generated and emitted with a BBO crystal 51 being a nonlinear optical element in an external oscillator 48 from the laser beam of wavelength 532 nm emitted by making incident a YAG laser beam on an SHG crystal incorporated in an SHG light source 44. The exposing laser beam L2 of wavelength 300 nm or less by the SNG is modulated by an acoustooptical element 61 being a modulation means and a master disk is irradiated with the exposing laser beam L2 by a near-field effect using an objective lens 80 whose numerical aterture is 1.0 or more via the optical system held by a moving optical table 29.
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公开(公告)号:JP2000033487A
公开(公告)日:2000-02-02
申请号:JP20390498
申请日:1998-07-17
Applicant: SONY CORP
Inventor: TAKEDA MINORU , KAI SHINICHI , YAMATSU HISAYUKI , FURUKI MOTOHIRO , TAKESHITA YASUYUKI , OSATO KIYOSHI
Abstract: PROBLEM TO BE SOLVED: To permit the formation of a latent image of a fine pattern on a resist layer by irradiating the resist layer formed on a board with laser beam applying high frequency superpose through an auto-focus mechanism and detecting this reflecting beam. SOLUTION: The laser beam emitted from a beam source 2 irradiates the resist layer 51 formed on the glass board 50 to form the latent image of the prescribed pattern on the resist layer 51. The high frequency convoluted laser beam emitted from the beam source 32 auto-focus, penetrates a correcting lens 33 to correct the chromatic aberration and further, penetrates a polarized- beam splitter 34 and a 1/4 wave length board 35 and directed to a reflecting mirror 36. The high frequency convoluted laser beam passed through the splitter 34 and the 1/4 wave length board 35, is made incident on objective lens 22 as p-polarized beam and the reflected beam of the high frequency superposed laser beam which irradiates the resist layer 51 through the objective lens 22, is used as s-polarized beam and the splippage amount of the focus is efficiently detected with a beam detector 37.
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公开(公告)号:JPH11203735A
公开(公告)日:1999-07-30
申请号:JP701698
申请日:1998-01-16
Applicant: SONY CORP
Inventor: TAKEDA MINORU
Abstract: PROBLEM TO BE SOLVED: To perform miniaturization, to reduce weight and to improve cutting accuracy by using a semiconductor laser for emitting the laser beam of the photosensitive wavelength of a photosensitive material layer for forming latent images as a light source for emitting the laser beam for recording. SOLUTION: This device is provided with a semiconductor laser chip 2 for emitting the laser beam of the photosensitive wavelength of a resist layer 31 formed on a glass substrate 30 rotated in the direction of an arrow A. The oscillation wavelength of the semiconductor laser chip 2 is 300-450 nm, it is small-sized and light in weight and the entire optical system to an objective lens 3 for converging the laser beam for recording from the semiconductor laser chip 2 is integrated on a moving optical table 11 moved in a radial direction indicated by the arrow B. Also, since the large amount of cooling water for cooling heat generated by the semiconductor laser chip 2 is not required and the optical path length of the optical system from the semiconductor laser chip 2 to the resist layer 31 is shortened, the fluctuation of the beam light axis of the laser beam for recording by the vibration of the cooling water is suppressed.
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公开(公告)号:JPH09106573A
公开(公告)日:1997-04-22
申请号:JP26436495
申请日:1995-10-12
Applicant: SONY CORP
Inventor: TAKEDA MINORU
Abstract: PROBLEM TO BE SOLVED: To align the position of each information recording area in optical information recording layers in a multilayered structure with high accuracy. SOLUTION: In this multilayered recording medium, at least a first and a second information recording layers 11, 12 are laminated. The substrate 1 on which at least one of the first and the second information recording layers 11, 12 is formed has a mark M for optical alignment in the area out of the information recording area so as to match the relation of position of each information recording area.
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公开(公告)号:JPH08250607A
公开(公告)日:1996-09-27
申请号:JP4687995
申请日:1995-03-07
Applicant: SONY CORP
Inventor: TAKEDA MINORU , KUBOTA SHIGEO , SONEDA MITSUO , YAMAGISHI MACHIO
IPC: G03F7/20 , G11C16/02 , G11C17/00 , H01L21/82 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PURPOSE: To surely protect a semiconductor ROM device from illegal acts, such as theft, piracy acts, and illegal copy of software programs. CONSTITUTION: A semiconductor ROM device of MONOS structure includes a memory block where a pattern for certification data is written. The pattern is written as follows: The semiconductor ROM device is locally spot-irradiated with ultraviolet laser light. Part of the ultraviolet rays enters the interface between a gate oxide film 14 and a nitride film 14, under a gate electrode 11, which excites holes h. The excited holes h get over a potential barrier, present between the gate oxide film 14 and the nitride film 13, and is emitted on the Si substrate 15 side. Thus a memory block is provided in which the pattern of validation data is written.
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公开(公告)号:JPH0866790A
公开(公告)日:1996-03-12
申请号:JP20527694
申请日:1994-08-30
Applicant: SONY CORP
Inventor: TAKEDA MINORU
Abstract: PURPOSE: To make a laser beam machine usable for long time by arranging the thin film having high and uniform transparency for laser beam wave between an object lens and sample to be machined. CONSTITUTION: After laser beam is emitted from laser beam emitting part 1 and light quantity is adjusted by a shutter 2, a beam diameter is expanded by a beam expander 3 and then is reflected by dichronic mirror (DCM) 4. The reflected beam is adjusted so as to condense on the surface of a sample 7 to be machined by an object lens 5. The reflected light from the surface of sample 7 to be machined is made incident on DCM 4 through a pellicle 6, object lens 5, its image is formed on CCD10 and is observed by a monitor 11. By arranging the pellicle 6 of high transparency for laser beam wave between the object lens 5 and sample 7 to be machined, the object lens 5 is protected from a transpired material 9 from the sample 7 to be machined and then the device is made usable for long time.
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公开(公告)号:JPH07211620A
公开(公告)日:1995-08-11
申请号:JP640694
申请日:1994-01-25
Applicant: SONY CORP
Inventor: TAKEDA MINORU
IPC: G02F1/37 , G03F7/20 , H01L21/027 , H01S3/109
Abstract: PURPOSE:To allow continuous regulation of the amount of exposure depending on the sensitivity of a resist film. CONSTITUTION:A fourth harmonic generating unit 112 is excited by the laser light from a laser light source to oscillate a basic wave laser light which is subjected to wavelength conversion through a first resonator comprising a first nonlinear optical crystal to produce a second harmonic laser light. The second harmonic laser light is further subjected to wavelength conversion through a second resonator comprising a second nonlinear optical crystal to produce a fourth harmonic laser light. A quantity of light control means 111 controls the output from the laser light source to regulate the laser light output from the fourth harmonic generating unit 112. A wafer 133 is exposed using the fourth harmonic laser light.
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公开(公告)号:JPH07106219A
公开(公告)日:1995-04-21
申请号:JP24309593
申请日:1993-09-29
Applicant: SONY CORP
Inventor: TAKEDA MINORU
IPC: G11B7/26 , H01L21/027
Abstract: PURPOSE:To provide an aligner especially e.g. an original opticaldisc aligner and semiconductor aligner capable of commonly using a simple optical system for exposure and monitor thereby making the highly accurate autofocussing operation feasible. CONSTITUTION:The laser beams wavelength-converted by a second resonator of a diode laser excited solid laser are picked up out of an ultraviolet laser beam source emitter 10 simultaneously emitting the laser beams from the first resonator to detect the positional slip amount of focus by a focus detection control system 11. At this time, the electromagnetic actuator of an exposure system 12 is drive-controlled according to this detected amount to jog an object lens 12a for adjusting the focal length between the object lens 12a and a wafer.
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公开(公告)号:JPH065714A
公开(公告)日:1994-01-14
申请号:JP18767592
申请日:1992-06-22
Applicant: SONY CORP
Inventor: TAKEDA MINORU
IPC: H01L23/522 , H01L21/768 , H01L21/90
Abstract: PURPOSE:To achieve the high-density mounting of interconnections by a method wherein, when a first interconnection as a lower layer is connected to a third interconnection as an upper layer, a contact hole whose designing size is minimum is made without coming into contact with a second interconnection as an intermediate layer. CONSTITUTION:A first layer insulating film 13 with which a first wiring 12 on a substrate 11 is covered is formed; second wirings 14, 15 wherein insulating films 16, 17 have been formed on their surfaces are formed on the first layer insulating film 13. A second layer insulating film 18 with which the second wirings 14, 15 and the insulating films 16, 17 are covered individually is formed. A contact hole 19 is made on the first wiring 12 and in the first and second layer insulating films 13, 18 between the second wirings 14, 15. An insulating sidewall 20 is formed on its sidewall. A third wiring 21 which is connected to the first wiring 12 via the contact hole 19 is formed on the second layer insulating film 18. Alternatively, a conductive plug is formed inside the contact hole 19, and the third wiring 21 which is connected to the plug is formed.
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