公开(公告)号：US11018001B2

公开(公告)日：2021-05-25

申请号：US16922330

申请日：2020-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong Kim ,  Hyeonjin Shin ,  Jaeho Lee ,  Sanghyun Jo

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/778 ,  H01L29/24

Abstract: A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.

公开(公告)号：US10971451B2

公开(公告)日：2021-04-06

申请号：US16215899

申请日：2018-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Keunwook Shin ,  Yonghoon Kim ,  Hyeonjin Shin ,  Hyunjae Song ,  Changseok Lee ,  Changhyun Kim ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US10931209B2

公开(公告)日：2021-02-23

申请号：US15378577

申请日：2016-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Young Kim ,  Kyungeun Byun ,  Hyeonjin Shin ,  Alum Jung

IPC: H02N1/04

Abstract: Example embodiments relate to an energy harvester using triboelectricity, and to an apparatus including the energy harvester. The energy harvester may include a first structure having a first triboelectric material, a second structure having a second triboelectric material, and a closed structure isolating friction surfaces of the first and second triboelectric materials from external environment. The energy harvester may further include a filling material in the closed structure. The filling material may have an electric charge. The filling material may have a viscosity. At least a portion of the closed structure may include an elastic material.

公开(公告)号：US10793436B2

公开(公告)日：2020-10-06

申请号：US15805810

申请日：2017-11-07

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Hyeonjin Shin ,  Meeree Kim ,  Hyoyoung Lee ,  Yunhee Cho

IPC: C30B29/46 ,  C30B29/60 ,  C30B7/14 ,  C01B19/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L29/06

Abstract: Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

公开(公告)号：US10727182B2

公开(公告)日：2020-07-28

申请号：US16257189

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US20200039827A1

公开(公告)日：2020-02-06

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum JUNG ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US20190252569A1

公开(公告)日：2019-08-15

申请号：US16232489

申请日：2018-12-26

Applicant: Samsung Electronics Co., Ltd. ,  Research and Business Foundation Sungkyunkwan University

Inventor： Sanghyun Jo ,  Heejun Yang ,  Geunwoo Hwang ,  Hyeonjin Shin

IPC: H01L31/109 ,  H01L31/032 ,  H01L31/112 ,  H01L31/0224

CPC classification number: H01L31/109 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/1129

Abstract: A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.

公开(公告)号：US10191367B2

公开(公告)日：2019-01-29

申请号：US15403446

申请日：2017-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Hyeonjin Shin

IPC: G03B27/42 ,  G03F1/62 ,  G03F1/64 ,  G03F1/48 ,  G03F7/20 ,  G03F1/22

Abstract: Provided are a pellicle for a photomask, which protects the photomask from external contamination and an exposure apparatus including the pellicle for the photomask. The pellicle for the photomask includes a pellicle membrane provided spaced apart from the photomask. The pellicle membrane includes a semiconductor having a two-dimensional (2D) crystalline structure.

公开(公告)号：US10153163B2

公开(公告)日：2018-12-11

申请号：US15611935

申请日：2017-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: H01L21/033 ,  H01L21/02 ,  C08K3/38 ,  C08K3/30 ,  C08K5/56 ,  C08K3/22 ,  C09D7/63 ,  C09D7/61 ,  G03F7/09 ,  H01L21/311

Abstract: Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.

公开(公告)号：US10134628B2

公开(公告)日：2018-11-20

申请号：US15172908

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Seongjun Park ,  Keunwook Shin ,  Hyeonjin Shin ,  Jaeho Lee ,  Changseok Lee ,  Yeonchoo Cho

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L21/285 ,  H01L29/45

Abstract: A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.