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公开(公告)号:US11709196B2
公开(公告)日:2023-07-25
申请号:US17378592
申请日:2021-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Donggyu Minn , Daehyun Kang , Yonghoon Kim , Jihoon Kim , Hyundo Ryu , Jeeho Park , Sunggi Yang , Youngchang Yoon , Sehyug Jeon
IPC: G01R31/28 , G01R31/3167 , G01R27/32
CPC classification number: G01R31/2822 , G01R27/32 , G01R31/3167
Abstract: The disclosure relates to an RFIC apparatus, and more particularly, to an RFIC circuit having a test circuit, a test apparatus, and a test method thereof. Further, the disclosure relates to a method for estimating or determining a DC gain using a test apparatus and an RF circuit in a DC/AC test stage, and detecting defects of the RF circuit based on the estimated or determined DC gain.
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公开(公告)号:US11682622B2
公开(公告)日:2023-06-20
申请号:US17165246
申请日:2021-02-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-Eun Byun , Keunwook Shin , Yonghoon Kim , Hyeonjin Shin , Hyunjae Song , Changseok Lee , Changhyun Kim , Yeonchoo Cho
IPC: H01L23/532 , H01L21/768 , H01L23/522
CPC classification number: H01L23/53276 , H01L21/76802 , H01L21/76846 , H01L21/76849 , H01L21/76877 , H01L23/5226
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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公开(公告)号:US11251882B2
公开(公告)日:2022-02-15
申请号:US16641207
申请日:2017-12-15
Applicant: Samsung Electronics Co., Ltd
Inventor: Manh-Tuan Dao , Yonghoon Kim , Yuichi Aoki
Abstract: The present disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-Generation (4G) communication system such as long-term evolution (LTE). The present disclosure provides a device and a method for calibrating a phased array antenna. A method for calibrating a phased array antenna according to various embodiments of the disclosure comprises the processes of: controlling a first radio frequency (RF) chain so as to transmit a first signal at a first phase, thereby determining the phase difference between the first phase and a reference phase; controlling the first RF chain so as to transmit a second signal at a second phase, thereby determining the phase condition of the phase difference; and calibrating the first RF chain on the basis of the phase difference and the phase condition. The reference phase may be the phase of a reference signal transmitted from a reference RF chain. Accordingly, the time necessary for calibration may be reduced, and mass production of phased array antennas may be facilitated. The present research has been financed by the Korean government (Ministry of Science and ICT) in 2017 and conducted with the support of “Intra-ministry Giga Korean Project” (No. GK17N0100, Millimeter-wave 5G Mobile Communication System Development).
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公开(公告)号:US11050495B2
公开(公告)日:2021-06-29
申请号:US16933190
申请日:2020-07-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tuan Manh Dao , Yuichi Aoki , Yonghoon Kim
Abstract: The disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). A method of operating an electronic device in a wireless communication system is provided. The method includes inputting training signals into a first loopback route and a second loopback route, determining a loopback gain and a loopback phase, based on a first training signal passing through the first loopback route and a second training signal passing through the second loopback route, determining a frequency domain compensation filter, based on the loopback gain and the loopback phase, determining an FIR filter and a DC offset, based on the frequency domain compensation filter, and compensating for a transmission signal and a reception signal, based on the FIR filter and the DC offset.
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公开(公告)号:US11217531B2
公开(公告)日:2022-01-04
申请号:US16884590
申请日:2020-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-Eun Byun , Keunwook Shin , Yonghoon Kim , Hyeonjin Shin , Hyunjae Song , Changseok Lee , Changhyun Kim , Yeonchoo Cho
IPC: H01L23/532
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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公开(公告)号:US10971451B2
公开(公告)日:2021-04-06
申请号:US16215899
申请日:2018-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung-Eun Byun , Keunwook Shin , Yonghoon Kim , Hyeonjin Shin , Hyunjae Song , Changseok Lee , Changhyun Kim , Yeonchoo Cho
IPC: H01L23/532 , H01L21/768 , H01L23/522
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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公开(公告)号:US09041222B2
公开(公告)日:2015-05-26
申请号:US14487287
申请日:2014-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yonghoon Kim , Keung Beum Kim , Seongho Shin , Seung-Yong Cha , Inho Choi
IPC: H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , H01L23/498 , H01L25/10 , H01L25/18 , H01L25/065
CPC classification number: H01L24/17 , H01L23/49811 , H01L23/49838 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81192 , H01L2225/0651 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/1437 , H01L2924/15311 , H01L2924/15331 , H01L2924/00012 , H01L2924/00 , H01L2924/014 , H01L2924/00014
Abstract: A semiconductor device is provided, which comprises a first semiconductor package, a second semiconductor package, and a connection structure. The first semiconductor package includes a first substrate. The first substrate includes a first region and a second region. The second semiconductor package is mounted on the first semiconductor package. The connection structure electrically connects the second semiconductor package and the first semiconductor package. The connection structure comprises first connection patterns at the first region. The first connection patterns provide a data signal at the first region. The connection structure further comprises second connection patterns at the second region. The second connection patterns provide a control/address signal at the second region. A number of the second connection patterns is less than a number of the first connection patterns.
Abstract translation: 提供一种半导体器件,其包括第一半导体封装,第二半导体封装和连接结构。 第一半导体封装包括第一衬底。 第一基板包括第一区域和第二区域。 第二半导体封装安装在第一半导体封装上。 连接结构电连接第二半导体封装和第一半导体封装。 连接结构包括在第一区域的第一连接图案。 第一连接图案在第一区域提供数据信号。 连接结构还包括在第二区域处的第二连接图案。 第二连接模式在第二区域提供控制/寻址信号。 多个第二连接图案小于第一连接图案的数量。
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公开(公告)号:US08766429B2
公开(公告)日:2014-07-01
申请号:US13660424
申请日:2012-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yonghoon Kim
IPC: H01L23/552 , H01L23/48 , H01L23/52
CPC classification number: H01L23/552 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/105 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/0651 , H01L2225/06537 , H01L2225/06568 , H01L2225/1023 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/07802 , H01L2924/12042 , H01L2924/14335 , H01L2924/1436 , H01L2924/1437 , H01L2924/1438 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor package includes a first package including a first wiring board and at least one first semiconductor chip mounted on the first wiring board, a second package stacked on the first package. The second package includes a second wiring board and at least one second semiconductor chip mounted on the second wiring board. The semiconductor package further includes at least one connection terminal connecting a plurality of signal lines of the first and second wiring boards, respectively, with each other. The semiconductor package further includes at least one ground terminal connecting a plurality of ground lines of the first and second wiring boards, respectively, with each other, and includes a side surface, and a shielding member covering a top surface and a side surface of a structure including the first and second packages and the shielding member is disposed on the at least one ground terminal.
Abstract translation: 半导体封装包括第一封装,第一封装包括第一布线板和安装在第一布线板上的至少一个第一半导体芯片,堆叠在第一封装上的第二封装。 第二封装包括第二布线板和安装在第二布线板上的至少一个第二半导体芯片。 半导体封装还包括分别将第一和第二布线板的多个信号线彼此连接的至少一个连接端子。 半导体封装还包括至少一个接地端子,其分别将第一和第二布线板的多个接地线彼此连接,并且包括侧表面,以及覆盖第一和第二布线板的顶表面和侧表面的屏蔽构件 包括第一和第二封装和屏蔽构件的结构设置在至少一个接地端子上。
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公开(公告)号:US11205631B2
公开(公告)日:2021-12-21
申请号:US16822300
申请日:2020-03-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Yonghoon Kim , Jaehyun Lim , Yuntae Lee , Sayoon Kang
IPC: H01L23/00 , H01L23/31 , H01L23/48 , H01L25/065
Abstract: Provided is a semiconductor package including a package structure including a base connection member including a redistribution layer, a first semiconductor chip including a plurality of first connection pads connected to the redistribution layer, an encapsulant disposed on the base connection member and covering at least a portion of the first semiconductor chip, and a backside connection member disposed on the encapsulant and including a backside wiring layer electrically connected to the redistribution layer, and a second semiconductor chip disposed on the base connection member or the backside connection member, the second semiconductor chip including a plurality of second connection pads connected to the redistribution layer or the backside wiring layer, the second semiconductor chip including a logic circuit, the first semiconductor chip including a logic input and output terminals that are connected to the logic circuit through at least one of the redistribution layer and the backside wiring layer.
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公开(公告)号:US10756076B2
公开(公告)日:2020-08-25
申请号:US16201361
申请日:2018-11-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yonghoon Kim
Abstract: A semiconductor package includes a package substrate, a logic chip on the package substrate, a memory stack structure on the package substrate and including first and second semiconductor chips stacked along a first direction, and a first bump between the package substrate and the memory stack structure. The logic chip and the memory stack are spaced apart along a second direction, crossing the first direction, on the package substrate. The first semiconductor chip includes a through via electrically connected to the second semiconductor chip, a chip signal pad connected to the through via, and a first redistribution layer electrically connected to the chip signal pad and having an edge signal pad in contact with the first bump. A distance between the logic chip and the edge signal pad along the second direction is less than that between the logic chip and the chip signal pad.
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